[B-13-4] Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
1997 International Conference on Solid State Devices and Materials |PDF ダウンロード
287件中(241 - 250)
1997 International Conference on Solid State Devices and Materials |PDF ダウンロード
1997 International Conference on Solid State Devices and Materials |PDF ダウンロード
1997 International Conference on Solid State Devices and Materials |PDF ダウンロード
1997 International Conference on Solid State Devices and Materials |PDF ダウンロード
1997 International Conference on Solid State Devices and Materials |PDF ダウンロード
1997 International Conference on Solid State Devices and Materials |PDF ダウンロード
1997 International Conference on Solid State Devices and Materials |PDF ダウンロード
1997 International Conference on Solid State Devices and Materials |PDF ダウンロード
1997 International Conference on Solid State Devices and Materials |PDF ダウンロード
1997 International Conference on Solid State Devices and Materials |PDF ダウンロード