[D-2-4] Electric Field Induced Recombination Centers in GaAs

Atsushi Kawaharazuka、Yoshiji Horikoshi (1.School of Science and Engineering, Waseda University)

1997 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-5] In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces

Tamotsu Hashizume、Yasuhiko Ishikawa、Toshiyuki Yoshida、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

1997 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-6] Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity

B. Adamowicz、T. Saitoh、T. Hashizume、H. Hasegawa (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University、2.Institute of Physics, Silesian Technical University)

1997 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-1] Reliability Concern of Ultra-Thin Gate Oxides

Akira Toriumi、Hideki Satake (1.Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation)

1997 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-2] Gate Voltage Dependence of Reliability for Ultra-Thin Oxides

Tanya Nigam、Michel Depas、Robin Degraeve、Marc M. Heyns、Guido Groeseneken (1.IMEC)

1997 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-3] An Experimental Evidence to Link the Origins of "A Mode" and "B Mode" Stress Induced Leakage Current

Kenji Okada (1.ULSI Process Technology Development Center, Matsushita Electronics Corporation)

1997 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-4] Spectroscopic and Theoretical Studies of Interface States at Ultrathin Oxide/Si Interfaces

Hikaru Kobayashi、Yoshiyuki Yamashita、Akira Asano、Yoshihiro Nakato、Yasushiro Nishioka (1.PRESTO, Japan Science and Technology Corporation、2.Department of Chemistry, Faculty of Engineering Science, and Research Center for Photoenergetics of Organic Materials, Osaka University、3.Texas Instruments Tsukuba Research & Development Center Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-1] Drain Disturb Relaxation by Substrate bias Selecting Scheme for Sector Erase Flash Memory with Conventional Single Stacked Gate Cell Structure

M. Yoshimi、N. Shinmura、T. Tanigami、K. Hakozaki、S. Sato、K. Iguchi (1.VLSI Development Laboratories, IC Tenri Group, SHARP Corporation)

1997 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-2] Byte Erasable NOR Flash EEPROM with Double Diffused Drain for High Programming Speed

M. K. Cho、K. H. Yum、K. S. Kim、J. H. Choi、S. T. Ahn、Dae M. Kim (1.Memory Division, Semiconductor Business, Samsung Electronics Co., LTD.、2.Department of Electrical Eng., Pohang University of Science and Technology)

1997 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-3] Suppression of Hole Injection into the Tunnel Oxides of Flash Memories

Yutaka Okuyama、Takashi Kobayashi、Katsutaka Kimura (1.Central Research Laboratory, Hitachi Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF ダウンロード