[E-6-5] Thermodynamic Stability of GaAs/InAs Heterostructure

Sornthep Vannarat, Marcel Sluiter, Yoshiyuki Kawazoe (1.Institute for Materials Research, Tohoku University, 2.National Electronics and Computer Technology Center)

2001 International Conference on Solid State Devices and Materials |PDF Download

[E-6-6] Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4x6) Reconstruction

Yuuta Nakano, Noboru Negoro, Hideki Hasegawa (1.Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and Information Engineering, Hokkaido University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-3-1] InP HBT Device technologies for Ultra High-Speed Optical Communication Ics

T. Tanoue, K. Ouchi, K. Watanabe, R. Takeyari (1.Central Research Laboratory, Hitachi, Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-3-2] A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs

Koichi Murata, Kimikazu Sano, Eiichi Sano, Suehiro Sugitani, Takatomo Enoki (1.NTT Photonics Laboratories)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-3-3] HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production

Yukihiro Kiyota, Tsutomu Udo, Takashi Hashimoto, Akihiro Kodama, Hiromi Shimamoto, Reiko Hayami, Eiji Ohue, Katsuyoshi Washio (1.Central Research Laboratory, Hitachi, Ltd., 2.Hitachi ULSI Systems Co., Ltd., 3.Device Development Center, Hitachi, Ltd., 4.Musashino Office, Hitachi Device Engineering Co., Ltd.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-3-4] A Noble Capacitive-Peaking Transimpedance Amplifier with High Linearity Gain Active Feedback Design

Feng-Tso Chien, Ching-Lin Cheng, Kao-Way Tu (1.R&D DEPT., Chino-Excel Technology Corp.)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-4-1] Device Physics of Sub-100 nm Transistors

Mark Lundstrom (1.School of Electrical and Computer Engineering, Purdue University)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-4-2] Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current

Shin-ichi Takagi, Mariko Takayanagi (1.Advanced LSI Technology Laboratory, Toshiba Corporation, 2.System LSI Research & Development Center, Semiconductor Company, Toshiba Corporation)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-4-3] Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness

Takamitsu Ishihara, Kazuya Matsuzawa, Mariko Takayanagi, Shin-ichi Takagi (1.Advanced LSI Technology Laboratory, Research and Development Center, Toshiba corporation, 2.Semiconductor company, System LSI Division, Toshiba corporation)

2001 International Conference on Solid State Devices and Materials |PDF Download

[F-5-1] 70 nm MOSFET Device Simulation Considering Two Dimensional Channel Quantization and Self-Consistent Non-Equilibrium Carrier Transport

Tatsuya Ezaki, Philipp Werner, Masami Hane (1.Silicon Systems Research Laboratories, NEC Corporation)

2001 International Conference on Solid State Devices and Materials |PDF Download