The Japan Society of Applied Physics

428件中(261 - 270)

[LP5-1] Optical properties of isoelectronically P-doped GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy

F. S. Juang、Y. G. Hong、M. H. Kim、C. W. Tu、W. C. Lai、J. Tsai (1.Department of Electro-optics Engineering, National Huwei Institute of Technology、2.Department of Electrical and Computer Engineering, University of California at San Diego、3.South Epitaxy Corporation, Tainan Science-based industry Park)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P6-5] Lasing Characteristics of InGaAs/InGaAsP MQW PnpN Optical Thyristor Operating at 1.565 μm

Doo Gun Kim、Hee Hyun Lee、Woon Kyung Choi、Young Wan Choi、Seok Lee、Deok Ha Woo、Young Tae Byun、Jae Hun Kim、Jeong Su Yang、Sun Ho Kim (1.Optoelectronics and Optical Communication Lab., School of Electrical and Electronic Engineering, Chung-Ang University、2.Photonics Research Center, Korea Institute of Science and Technology)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

428件中(261 - 270)