The Japan Society of Applied Physics

428件中(371 - 380)

[LB-1-2] Plasma Nitridation Technique for the Formation of Thermally Stable Hf-silicate Gate Dielectric with Controlled Nitrogen Profile

Akio Kaneko、Yoshiki Kamata、Mizuki Ono、Masato Koyama、Akira Nishiyama、Yuichi Kamimuta、Chie Hongo、Akira Takashima、Dawei Gao、Seiji Inumiya、Kazuhiro Eguchi、Mariko Takayanagi (1.Advanced LSI Technology Laboratory, Environmental Engineering and Analysis Center, Toshiba Corporation、2.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation、3.SoC Research & Development Center, Semiconductor Company, Toshiba Corporation)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

428件中(371 - 380)