The Japan Society of Applied Physics

428件中(71 - 80)

[A-3-4] An Electrostatic-Discharge(ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Layer-Extended Transistor(DET) for RF-CMOS IC's

T. Ohnakado、S. Yamakawa、A. Furukawa、K. Nishikawa、T. Murakami、Y. Hashizume、K. Sugahara、N. Suematsu、T. Oomori (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation、2.Information Technology R&D Center, Mitsubishi Electric Corporation)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-1] MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

E. A. Fitzgerald、M. L. Lee、C. W. Leitz、D. A. Antoniadis、A. Lochtefeld、R. Hammond、M. T. Currie、G. Braithwaite、F. Singaporewala、J. Yap、C. J. Vineis、N. D. Gerrish、R. Westhoff、M. T. Bulsara、J. H. Ho、J. R. Hwang、Y. S. Hsieh、T. P. Chen、Anthony Lee、T. Y. Chen、W. Y. Hsieh、P. W. Yen、W. T. Shiau、Y. T. Loh、S. C. Chien、Frank Wen (1.MIT, Department of Materials Science and Engineering、2.Department of EECS、3.AmberWave Systems Corporation、4.UMC)

2002 International Conference on Solid State Devices and Materials |PDF ダウンロード

428件中(71 - 80)