[E-2-4] Degradation Mechanism of HfAlOX/SiO2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis

Kenji Okada、Wataru Mizubayashi、Naoki Yasuda、Hiroyuki Ota、Koji Tominaga、Kunihiko Iwamoto、Tsuyoshi Horikawa、Katsuhiko Yamamoto、Hirokazu Hisamatsu、Hideki Satake、Toshihide Nabatame、Akira Toriumi (1.MIRAI-ASET、2.MIRAI-ASRC、3.Department of Materials Science, The University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-5] Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)

Takeshi Yamaguchi、Izumi Hirano、Katsuyuki Sekine、Seiji Inumiya、Kazuhiro Eguchi、Mariko Takayanagi、Noburu Fukushima (1.Advanced LSI Technology Laboratory、2.Semiconductor Company, Toshiba Corporation)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-1-1] Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold 1.31μm Quantum Dot Lasers

R. Hogg、K. M. Groom、H. Y. Liu、I. R. Sellers、S. K. Ray、T. Badcock、M. Gutierrez、M. Hopkinson、J. S. Ng、J. P. R. David、D. J. Mowbray、M. S. Skolnick (1.Dept. of Electronic & Electrical Engineering, University of Sheffield、2.Dept. of Electronic & Electrical Engineering, University of Sheffield、3.Dept. Of Physics & Astronomy, University of Sheffield)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-1-2] Temperature dependent photoluminescence of highly strained InGaAsN/GaAs Quantum Well ( λ=1.28-1.45 μm) with GaAsP strain-compensated layer

Y. H. Chang、H. C. Kuo、Y. A. Chang、M. Y. Tsai、S. C. Wang、N. Tansu、Jeng-Ya Yeh、Luke J. Mawst (1.Insititue of Electro-Optical Engineering, Nation Ciao-Tong University、2.Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University、3.Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-1-3] Study of the electron properties by persistent photoconductive measurement in GaxIn1-xNyAs1-y

Yan-Kuin Su、Shuo-Hsien Hsu; Shoou-Jinn Chang、Pei-hsuan Wu (1.National Cheng Kung University, Institute of Microelectronics, Department of Electrical Engineering)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-1-4] InGaAs-Based Quantum Wells for Ultrafast All-Optical Switches Using Intersubband Transitions

T. Mozume、J. Kasai、N. Georgiev、T. Simoyama、S. Sekiguchi、A. V. Gopal、H. Yoshida、H. Ishikawa (1.FESTA Laboratories, Femtosecond Technology Research Association、2.Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research、3.The Imai Quantum Computation and Information Project, ERATO, JST)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-1-5] High-performance Multi-color InAs/AlGaAs Quantum Dot Infrared Photodetector

Sheng-De Chen、Ying-Ying Chen、Si-Chen Lee (1.Department of Electrical Engineering/Graduate Institute of Electronics Engineering National Taiwan University)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-1-6] InP/InGaAs/InP Double Hetero-junction Solar Cells with Increased Open-Circuit Voltage

Choul-Young Kim、Jung-Ho Cha、Jaeho Kim、Young-Se Kwon (1.Department of Electrical Engineering and Computer Science, KAIST)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-1] High performance 0.1μm GaAs PHEMT with Si pulse doped cap layer for 77GHz car radar applications

Sungwon Kim、Hunhee Noh、Kyoungchul Jang、Kwangseok Seo (1.Seoul Nat’l Univ., School of Electrical Eng.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-2] Transconductance Linearity Improvement of E-pHEMT with High Vg.on

Kyoungchul Jang、Sungwon Kim、Jongwon Kim、Kwangseok Seo (1.Seoul National Univ., School Of Electrical Engineering and Computer Science)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード