[P5-10] Anomalous Behavior of Interface Traps of Si MOS Capacitors Contaminated with Organic Molecules

Masato Suzuki、Shin Yokoyama (1.Research Center for Nanodevices and Systems, Hiroshima University)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P5-11] Precise Depth Profiling of Sub-keV Implanted Arsenic

Takanori Eto、Kentaro Shibahara (1.Research Center for Nanodevices and Systems, Hiroshima University)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P5-12] Post-deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors

M. Sasagawa、K. Kita、K. Kyuno、A. Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P5-13] Contactless Characterization of Fixed Charge in HfO2 Thin Film by Photoreflectance

Masayuki Sohgawa、Masato Yoshida、Takuji Naoyama、Taizou Tada、Koji Ikeda、Takeshi Kanashima、Akira Fujimoto、Masanori Okuyama (1.Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University、2.Department of Electrical Engineering, Wakayama National College of Technology)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P5-14] Effect of Hf metal predeposition on the electrical properties of HfO2 films on tensile strained Si0.9954C0.0046 layer

Y. S. Liu、S. Maikap、P. S. Chen、K. C. Liu (1.Department of Electronics Engineering, Chang Gung University、2.Department of Electrical Engineering and Graduate Institute of Electronic Engineering, NTU、3.ERSO/ITRI)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P5-15] Influence of Thermal Annealing on Chemical Structure of Lanthanum oxide/Si Interfacial Transition Layer

H. Nohira、T. Yoshida、H. Okamoto、S. Shinagawa、W. Sakai、K. Nakajima、M. Suzuki、K. Kimura、Ng Jin Aun、Y. Kobayashi、S. Ohmi、H. Iwai、Y. Takata、K. Kobayashi、T. Hattori (1.Department of Electrical & Electronic Engineering, Musashi Institute of Technology、2.Department of Engineering Physics and Mechanics, Kyoto University、3.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology、4.Frontier Collaborative Research Center, Tokyo Institute of Technology、5.RIKEN/SPring-8、6.JASRI/SPring-8)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P6-1] Nitride-based light emitting diode and photodetector dual function Devices with InGaN/GaN multiple quantum well structures

Y. D. Jhou、C. H. Chen、S. J. Chang、Y. K. Su、P. C. Chang、P. C. Chen、H. Hung、S. M. Wang、C. L. Yu (1.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University、2.Department of Electrical Engineering Cheng Shiu University、3.Department of Electronic Engineering, Nan Jeon Institute of Technology)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P6-2] Characteristics of p-type InGaN grown by metalorganic chemical vapor depostion

Kwang-Su Ryu、Jin-Woo Ju、A. S. Fedorov、Cheul-Ro Lee、In-Hwan Lee、Ki-Ho Park、Young-Hee Lee、Je-Won Kim (1.School of Advanced Materials Engineering and Research Institute of Advanced Materials Development, Chonbuk National University、2.Sysnex Co., Ltd.、3.Photonic Device Lab. Samsung Electro-Mechanics Co.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P6-3] Performance of AlGaN/GaN Heterostrucrure FETs Over Temperatures

Chien-Chi Lee、Cheng-Feng Shih、Chien-Ping Lee、Ru-Chin Tu、Chang-Cheng Chuo、Jim Chi (1.Department of Electronics Engineering, National Chiao Tung University、2.Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P6-4] Characteristics of Pt/Schottky Diode s fabricated on the Cracked GaN Epitaxial Layer on (111) Silicon

Sung-Jong Park、Yong-Woon Choi、Heon-Bok Lee、Wang Lian Shan、Soo-Jin Chua、Jung-Hee Lee、Sung-Ho Hahm (1.School of Electrical and Computer Engineering, Kyungpook National University、2.Institute of Materials Research and Engineering, Singapore、3.Department of Electrical and Computer Engineering, National University of Singapore, Singapore.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード