The Japan Society of Applied Physics

566件中(241 - 250)

[G-1-2] Ti-barrier Metal for Robust and Reliable 45nm Node Porous Low-k/Copper Interconnects

K. Higashi、H. Yamaguchi、T. Yosho、A. Sakata、S. Omoto、S. Yamashita、T. Fujimaki、Y. Enomoto、N. Matsunaga、H. Shibata (1.Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation、2.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation、3.System LSI Division I, Semiconductor Company, Toshiba Corporation、4.Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-1] Design of New Ultra Low-dielectric Materials and Characterization

D. Y. Yoon、H. W. Ro、E. S. Park、J. H. Park、J. H. Shim、J.-K. Lee、K. Char、H.-W. Rhee、H. J. Lee、C. Soles、D. W. Gidley (1.Department of Chemistry, Seoul National University、2.Polymers Division, National Institute of Standards and Technology、3.Department of Chemical and Biological Engineering, Seoul National University、4.Department of Chemical Engineering, Sogang University、5.Department of Physics, University of Michigan)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-2] SiOCH Films with Hydrocarbon Network Bonds: First-Principles Investigation

Nobuo Tajima、Tomoyuki Hamada、Takahisa Ohno、Katsumi Yoneda、Seiichi Kondo、Nobuyoshi Kobayashi、Manabu Shinriki、Kazuhiro Miyazawa、Kaoru Sakota、Satoshi Hasaka、Minoru Inoue (1.First Principles Simulation Group, Computational Materials Science Center, National Institute for Materials Science、2.The FSIS Center for Collaborative Research, Institute of Industrial Science, University of Tokyo、3.Semiconductor Leading Edge Technologies, Inc.、4.Taiyo Nippon Sanso Corporation)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

566件中(241 - 250)