The Japan Society of Applied Physics

[B-2-5] Light emission from two junction Si CMOS LED’s (450nm ? 750nm) with two order increase in emission intensity - Applications for next generation silicon-based optoelectronics

L. W. Snyman、M. du Plessis、H. Aharoni (1.Tshwane University of Technology, Department of Electronic Engineering、2.University of Pretoria, Carl and Emily Fuchs Institute of Microelectronics、3.Ben Gurion University of the Negev, Department of Electronic and Computer Engineering, Fundamental and Environmental Research Laboratories)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-3-1] High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)

Y. P. Hsu、S. J. Chang、Y. K. Su、W. S. Chen、J. K. Sheu、J. Y. Chu、C. T. Kuo (1.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University、2.Institute of Electro-Optical Science and Engineering National Cheng Kung University、3.Epitech Technology Corporation)

2006 International Conference on Solid State Devices and Materials |PDF ダウンロード