[J-5-2] Three-Dimensional Electro-Thermsl Compact Model for Reset Operation of Phase Change Memories

A. Sakai、K. Sonoda、M. Moniwa、K. Ishikawa、O. Tsuchiya、Y. Inoue (1.Renesas Technology Corp.)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-3] Comprehensive HSPICE Model of Phase Change Memory Cell for Static and Transient Programming

Der-Sheng Chao、Yan-Kai Chen、Yi-Bo Liao、Meng-Hsueh Chiang、Chenhsin Lien、Ming-Jer Kao、Ming-Jinn Tsai (1.Electronics and Optoelectronics Research Laboratories (EOL), ITRI、2.Institute of Electronics Engineering, National Tsing Hua University、3.Department of Electronic Engineering, National Ilan University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-1] Current Development Status and Future Challenge of Metal Oxide RRAM Technologies

Nobuyoshi Awaya (1.SHARP Corporation, Advanced Materials Rsearch Laboratories Corporate Research and Development Group)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-2] Elucidation of ReRAM Mechanism and Improvement of Memory Characteristics by HPHA

Dong-jun Seong、Dongsoo Lee、Seokjoon Oh、Myungbeom Pyun、Hyunsang Hwang (1.Department of Materials Science and Engineering, Gwangju Institute of Science and Technology)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-3] Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices

L.F. Liu、J.F. Kang、H. Tang、N. Xu、Y. Wang、X.Y. Liu、X. Zhang、R.Q. Han (1.Institute of Microelectronics, Peking University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-1] Ru/TiO2/ZrO2/TiN (RIT-TiO2/ZrO2) Capacitor Structure for the 50nm DRAM Device and beyond

Jae-Soon Lim、Ki-Chul Kim、Kwang Hee Lee、Jae Hyoung Choi、Yong Suk Tak、Wan-Don Kim、Jin Yong Kim、Kyuho Cho、Younsoo Kim、Jeong-Hee Chung、Young-Sun Kim、Sung-Tae Kim、Woosung Han (1.Advanced Process Development Team、2.Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-2] Electrical Properties of TiO/LaTiO/TiO Stacked Thin Films

Hikaru Hara、Masami Tanioku、Masaki Yamato、Takamaro Kikkawa (1.Research Center for Nanodevices and Systems, Hiroshima University、2.Elpida Memory, Inc.)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-3] Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM

Shigemi Murakawa、Masashi Takeuchi、Minoru Honda、Shu-ichi Ishizuka、Toshio Nakanishi、Yoshihiro Hirota、Takuya Sugawara、Yoshitsugu Tanaka、Yasushi Akasaka、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.Tokyo Electron Ltd.、2.Management of Science and Technology, Graduate School of Engineering, Tohoku University、3.Tokyo Electron AT Ltd., SPA Development and Engineering、4.New Industry Creation Hatchery Center, Tohoku University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-4] Effect of Boron-Nitride Formation at the Interface of Diffusion Barrier in Tungsten Polymetal Gate Stacks on Gate Interfacial Resistance

M. G. Sunga、K. Y. Lim、Y. S. Kim、H. J. Cho、S. R. Lee、S. A. Jang、M. S. Joo、J. H. Lee、T. Y. Kim、T. O. Youn、J. H. Kim、G. O. Kim、Y. T. Hwang、H. S. Yang、J. C. Ku、J. W. Kim (1.R&D Division, Hynix Semiconductor Inc.)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-8-1] Improvement of Thermal Stability of MRAM Device with SiN Protective Film Deposited by HDP CVD

Katsumi Suemitsu、Yuichi Kawano、Hiroaki Utsumi、Hiroaki Honjo、Ryusuke Nebashi、Shinsaku Saito、Norikazu Ohshima、Tadahiko Sugibayashi、Hiromitsu Hada、Tatsuhiko Nohisa、Tadashi Shimazu、Masahiko Inoue、Naoki Kasai (1.NEC Corporarion, Device Platforms Research Laboratories、2.Mitsubishi Heavy Industries, LTD., Semiconductor Manufacturing Equipment Office)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード