The Japan Society of Applied Physics

591件中(431 - 440)

[P-3-1] Impact of Zr/Hf Ratio on Reliability of HfZrOX Gate Dielectric

J.C. Liao、Y.K. Fang*、Y.T. Hou、W. H. Tseng、J. Y. Yang、P.F. Hsu、Y.S. Chao、K.C. Lin、K.T. Huang、T.L. Lee、M.S. Liang (1.VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University、2.Taiwan Semiconductor Manufacturing Company)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-2] Current Transportation Mechanism of HfO2 Gate Dielectrics with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application

Woei Cherng Wu、Chao Sung Lai、Tsui Ming Wang、Jer Chyi Wang、Ming Wen Ma、Tien Sheng Chao (1.Department of Electronic Physics, National Chiao Tung University、2.Department of Electronic Engineering, Chang Gung University、3.Nanya Technology Corporation、4.Department of Electronics Engineering, National Chiao Tung University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-3] Extra Bonus on Transistor Optimization with Stress Enhanced Notch-gate Technology for sub-90nm CMOSFET

W.-K. Yeh、C.-M. Lai、Y.-K. Fang、C.-W. Hsu、C.-T. Lin、C.-H. Hsu、L.-W. Chen、Y.-T. Huang、C.-T. Tsai (1.Department of Electrical Engineering, National University of Kaohsiung、2.Institute of Microelectronics, National Cheng Kung University、3.United Microelectronics Corporation, Central R&D Division)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

591件中(431 - 440)