[K-1-1] From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs

J. Verduijn¹, G. P. Lansbergen¹, G. C. Tettamanzi¹, R. Rahman², S. Biesemans², N. Colleart³, G. Klimeck², L. C. L. Hollenberg⁴, S. Rogge¹ (1.Delft Univ. of Tech.(Netherlands), 2.Purdue Univ.(USA), 3.IMEC(Belgium), 4.Univ. of Melbourne(Australia))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-1-2] Single-Electron Transport through Discrete Dopants

D. Moraru¹, M. Anwar¹, M. Ligowski^1,2, S. Miki¹, R. Nakamura¹, T. Mizuno¹, R. Jablonski², M. Tabe¹ (1.Shizuoka Univ.(Japan), 2.Warsaw Univ. of Tech.(Russia))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-1-3] Tunnel Spectroscopy of Electron Subbands in Thin SOI MOSFETs

J. Noborisaka¹, K. Nishiguchi¹, H. Kageshima¹, Y. Ono¹, A. Fujiwara¹ (1.NTT Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-1-4] Si SET-based Flexible Multi-valued Half Adder Logic Cell

S. J. Kim¹, E. S. Park¹, S. J. Shin¹, J. B. Choi¹, Y. S. Yu² (1.Chungbuk National Univ.(Korea), 2.Hankyong National Univ(Korea))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-1-5] Dual-Gate Single-Electron Transistors (DG-SETs) with Silicon Nano-Wire Channel and Surrounding Side Gates

D. S. Lee¹, K. C. Kang¹, J. E. Lee¹, H. S. Yang¹, J. H. Lee¹, B. G. Park¹ (1.Seoul National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-1-6] Dislocation-Based Si-Nanodevices

M. Reiche¹, M. Kittler², D. Buca³, A. Hähnel¹, Q. T. Zhao³, S. Mantl³, U. Gösele¹ (1.Max-Planck-Institut für Mikrostrukturphysik(Germany), 2.IHP Frankfurt(Germany), 3.Forschungszentrum Jülich(Germany))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-1-7] Slow and Fast Electron Channels in a Coherent Quantum Dot Mixer

D. G. Austing^1,2, C. Payette^1,2, G. Yu¹, J. Gupta¹, G. Aers¹, S. Nair³, S. Amaha⁴, S. Tarucha^4,5 (1.National Res. Council(Canada), 2.McGill Univ.(Canada), 3.Univ. of Toronto(Canada), 4.JST(Japan), 5.Univ. of Tokyo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-1-8] Series Coupled Vertical Triple Quantum Dot Structures

S. Amaha¹, T. Hatano¹, K. Ono², Y. Tokura^1,3, S. Tarucha^1,4, J. Gupta⁵, D. G. Austing⁵ (1.ICORP-JST(Japan), 2.RIKEN(Japan), 3.NTT Corp.(Japan), 4.Univ. of Tokyo(Japan), 5.National Res. Council of Canada(Canada))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-2-1] New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor

M. Muraguchi¹, Y. Sakurai², Y. Takada², Y. Shigeta⁴, M. Ikeda³, K. Makihara³, S. Miyazaki³, S. Nomura², K. Shiraishi², T. Endoh¹ (1.Tohoku Univ.(Japan), 2.Univ. of Tsukuba(Japan), 3.Hiroshima Univ.(Japan), 4.Univ. of Hyogo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[K-2-2] Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structures

N. Morisawa¹, M. Ikeda¹, S. Nakanishi¹, A. Kawanami¹, K. Makihara¹, S. Miyazaki¹ (1.Hiroshima Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (421 - 430)

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