[A-4-2] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates

T. Mizuno^1,2, N. Mizoguchi¹, K. Tanimoto¹, T. Yamauchi¹, T. Tezuka³, T. Sameshima⁴ (1.Kanagawa Univ.(Japan), 2.MIRAI-NIRC(Japan), 3.MIRAI-Toshiba(Japan), 4.Tokyo Univ. of Agri. And Tech.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] NiSi metal S/D transistors with ultimaltely low Schottky barrier by sulfur Implantation After Silicidation Process

Y. Nishi¹, A. Kinoshita¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] A New Diamond-like Carbon (DLC) Ultra-High Stress Liner Technology for Direct Deposition on P-Channel Field-Effect Transistors

B. Liu¹, M. C. Yang², Y. C. Yeo¹ (1.National Univ. of Singapore(Singapore), 2.Data Storage Inst.(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Investigation on Enhanced Impact Ionizaion in Uniaxially Strained Si MOSFET

S. Adachi¹, T. Asano¹ (1.Kyushu Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-5-4] Influence of Carrier Transit Delay on CMOS Switching Performance

D. Hori¹, M. Miyake¹, N. Sadachika¹, H. J. Mattausch¹, M. Miura-Mattausch¹, T. Iizuka², T. Hoshida², K. Matsuzawa², Y. Sahara², T. Tsukada² (1.Hiroshima Univ.(Japan), 2.STARC(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Microscopic Characterization of Devices by Scanning Transmission Electron Microscopy: From Single Atom Imaging to Macroscopic Properties

S. J. Pennycook¹, K. van Benthem¹, A. G. Marinopoulos¹, S. T. Pantelides¹ (1.Oak Ridge National Lab.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Three-Dimensional Visualization Technique for Crystal Defects in High Performance CMOS Devices with Embedded SiGe-Source/Drain

S. Kudo¹, N. Nakanishi¹, Y. Hirose¹, K. Sato¹, T. Yamashita¹, H. Oda¹, K. Kashihara¹, N. Murata¹, T. Katayama¹, K. Asayama¹, J. Komori¹, E. Murakami¹ (1.Renesas Tech. Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] X-ray photoelectron spectroscopy study of dipole effects at HfO₂/SiO₂/Si stacks

L. Q. Zhu¹, K. Kita¹, T. Nishimura¹, K. Nagashio¹, S. K. Wang¹, A. Toriumi¹ (1.Univ. of Tokyo)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] Impact of Si Oxidation States on Dipole Layer at HfO₂/Si Interface

N. Miyata^1,2, Y. Abe², T. Yasuda¹ (1.AIST(Japan), 2.Musashi Inst. Of Tech.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-1-5] Evaluation of Effective Work Function of Pt on Bi-layer High-k/SiO₂ Stack Structure using by Backside X-ray Photoelectron Spectroscopy

T. Mori¹, A. Ohta¹, H. Murakami¹, S. Higashi¹, S. Miyazaki¹ (1.Hiroshima Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (21 - 30)

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