[C-7-1] Experimental Study of PVD-TiN Gate with Poly-Si Capping and Its Application to 20 nm FinFET Fabrication
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download