[P-3-22] Calibration of Linear Piezo Resistance Coefficients using 3-Dimensional Stress Simulation of Si-MOSFETs Structures

A. Satoh¹, T. Tada¹, V. Poborchii¹, T. Kanayama¹, S. Satoh², H. Arimoto¹ (1.AIST, 2.Fujitsu Semiconductor Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-23] Investigation of Different Capping Layers and Strain Sources for SMT Process

C. C. Liao¹, M. C. Lin¹, T. S. Chao¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-24] X-Ray Radiation Effects on CMOS Image Sensor In-Pixel Devices

J. Tan¹, B. Buttgen¹, A. J. P. Theuwissen^1,2 (1.Delft Univ. of Tech. , Netherlands, 2.Harvest Imaging , Belgium)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-25] High-Performance (S. S.<100 mV/dec) Poly-Si TFTs with Laser Annealed Channel and High-κ Metal-Gate on Glass Substrate

Y. H. Lue¹, C. H. Chien¹, P. Y. Kuo¹, M. J. Yang¹, H. Y. Lin², T. S. Chao¹ (1.National Chiao Tung Univ., 2.Toppoly Optoelectronics Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-26L] Electron and hole mobility comparison in a single Ge-MOSFET fabricated on 50 nm-thick GeOI substrate

D. D. Zhao¹, C. H. Lee¹, T. Nishimura^1,2, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-3-27L] Nanosized-Metal-Grain-Induced Characteristic Fluctuation in 16-nm CMOS Devices

Y. Li^1,2, C. H. Yu¹, M. H. Han¹, H. W. Cheng¹ (1.National Chiao Tung Univ., 2.National Nano Device Labs. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-4-1] Impedance analysis of controlled-polarization-type ferroelectric-gate TFT using RC distributed constant circuit

T. Fukushima¹, K. Maeda¹, T. Yoshimura¹, A. Ashida¹, N. Fujimura¹ (1.Osaka Prefecture Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-4-2] Effect of MIM type selection device on readout margin of cross-point bipolar ReRAM

J. Shin¹, I. Kim¹, J. Park¹, J. Lee¹, M. Jo¹, K. P. Biju¹, S. Jung¹, W. Lee¹, S. Kim¹, S. Park¹, D. Lee¹, H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-4-3] One-Diode-One-Resistor Titanium-Oxide RRAM Fabricated at Room Temperature

C. W. Kuo¹, J. J. Huang¹, W. C. Chang¹, T. H. Hou¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-4-4] Improved Resistive Switching Uniformity of a Bilayer TiO₂ Films

I. Kim¹, S. Jung¹, J. Shin¹, K. P. Biju¹, K. Seo¹, M. Siddik¹, X. J. Liu¹, J. Kong¹, K. Lee¹, H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (481 - 490)

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