[P-12-8] Formation of Nitrogen Vacancy Adjoining to Gd Ion Doped in GaN

D. Abe¹, K. Higashi¹, S. Emura¹, Y. K. Zhou¹, S. Hasegawa¹, H. Asahi¹ (1.Osaka Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-12-9] Effect of GaAs Surface Structure on Tunneling Anisotropic Magnetoresistance in Epitaxial Co₅₀Fe₅₀/n-GaAs Junctions

T. Uemura¹, T. Akiho¹, M. Harada¹, K. Matsuda¹, M. Yamamoto¹ (1.Hokkaido Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-12-10] Different magnetic properties of L1₀-FePt grown on sputtered and EB deposited MgO / GaAs structures

R. Ohsugi¹, M. Kohda^1,2, T. Seki¹, M. Mizuguchi¹, K. Takanashi¹, J. Nitta¹ (1.Tohoku Univ., 2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-12-11] Tight-binding calculation of conductance and magnetoresistance in disordered FM/graphene/FM junctions

S. Honda¹, R. Sato², A. Yamamura², T. Hiraiwa², H. Itoh¹, J. Inoue² (1.Kansai Univ., 2.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-12-12] High-Speed-Search Nonvolatile TCAM Using MTJ Devices

S. Matsunaga¹, A. Katsumata¹, M. Natsui¹, T. Endoh¹, H. Ohno¹, T. Hanyu¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-12-13] Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer

A. Makarov¹, V. Sverdlov¹, D. Osintsev¹, S. Selberherr¹ (1.TU Wien , Austria)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-12-14] Stochastic State Transition of a Spin Torque Nano Oscillator

K. Nakada¹, S. Yakata^1,2, T. Kimura^1,2 (1.Kyushu Univ., 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-12-15] Spin-Photon Memory and Spin Transistor with Floating Gate

V. Zayets¹, H. Saito¹, S. Yuasa¹, K. Ando¹ (1.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-12-16L] Temperature Dependence of Spin Relaxation Time in InAs Columnar Quantum Dots at 10 to 50 K

S. Nakanishi¹, K. Sasayama¹, Y. Oyanagi¹, R. Yamaguchi¹, S. Lu², L. H. Li³, A. Fiore⁴, A. Tackeuchi¹ (1.Waseda Univ. , Japan, 2.Chinese Academy of Sci. , China, 3.Ecole Polytechnique Federale de Lausanne , Switzerland, 4.Eindhoven Univ. of Tech. , Netherlands)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-1] Fabrication and Characterization of InP Nanowire Light Emitting Diodes

S. Maeda¹, K. Tomioka^1,2, S. Hara¹, J. Motohisa¹ (1.Hokkaido Univ., 2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

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