[P-13-2] Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon: Reduction of Parasitic Capacitance caused by SiGe layer

M. D. Ko¹, S. H. Lee¹, R. H. Baek¹, C. H. Park¹, C. W. Sohn¹, C. K. Baek^1,2, J. S. Lee¹, Y. H. Jeong¹ (1.POSTECH, 2.NCNT , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-3] A Multi Switching Current Study of Single-Electron Transistors Using Side Gate Bias Effect

J. E. Lee¹, K. W. Kim¹, J. H. Lee¹, K .C. Kang¹, H. Shin¹, K. Yoh², B. G. Park¹ (1.Seoul National Univ. , Korea, 2.Hokkaido Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-4] Growth of GaAs Nanowires on Poly-Si by Selective-Area MOVPE

K. Ikejiri¹, K. Tomioka¹, S. Imai², T. Fukui¹ (1.Hokkaido Univ., 2.Sharp Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-5] Formation of ohmic contact of InP nanowires without annealing processes

G. Zhang¹, S. Saito¹, K. Tateno¹, H. Gotoh¹, T. Sogawa¹ (1.NTT Basic Res Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-6] Suppression of surface nanocrystal nucleation in growth of GaAs nanowire on Si(111) by molecular beam epitaxy

J. Kwoen¹, N. Kumagai¹, K. Watanabe¹, S. Ohkouchi¹, S. Iwamoto¹, Y. Arakawa¹ (1.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-7] Thermoelectric power of catalyst-free GaAs nanowires grown by MBE-VLS method

J. H. Paek¹, M. Yamaguchi¹, H. Amano¹ (1.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-8] Effect of the Drain Configuration on the Current-Voltage Characteristics of Vertical Nanowire Field Effect Transistors

S. Karmalkar¹, V. K. Gurugubelli¹, K. R. K. Maheswaran¹ (1.Indian Inst. of Tech. , India)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-9] Graphene Gated SiO₂ Core-shell Silicon Nanowire Transistors

J. E. Jin¹, J. H. Lee^1,2, D. H. Hwang¹, D. W. Kim¹, M. J. Kim^1,2, K. S. Son^1,2, D. Whang^1,2, S. W. Hwang¹ (1.Korea Univ., 2.Sungkyunkwan Univ. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-10] Tunable Magnetic Properties of Rhombohedral Graphite Thin Films

N. T. Cuong^1,3, M. Otani^1,3, S. Okada^2,3 (1.AIST, 2.Univ. of Tsukuba, 3.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-13-11] Precise control of layer number in graphene grown on Ni(111)

S. Entani¹, Y. Matsumoto¹, M. Ohtomo¹, P. V. Avramov¹, H. Naramoto¹, S. Sakai¹ (1.JAEA , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (691 - 700)

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