[C-1-2] Fabrication of Graphene Directly on SiO₂ without Transfer Processes by Annealing Sputtered Amorphous Carbon

M. Sato¹, M. Inukai², E. Ikenaga², T. Muro², S. Ogawa³, Y. Takakuwa³, H. Nakano¹, A. Kawabata¹, M. Nihei¹, N. Yokoyama¹ (1.AIST/GNC, 2.JASRI/SPring-8, 3.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[C-1-3] Initial Growth Observation of Multilayer Graphene on SiO₂/Si substrates Using Raman Spectroscopy and XPS

Y. Ojiro¹, S. Ogawa¹, M. Inukai², M. Sato^1,3, E. Ikenaga², T. Muro², M. Nihei³, Y. Takakuwa¹, N. Yokoyama³ (1.Tohoku Univ., 2.JASRI/SPring-8, 3.AIST/GNC , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[C-1-4] STC: Single-Tube Characterization Methodology for Experimental and Analytical Evaluation of Carbon Nanotube Synthesis

H. Y. Chen¹, A. Lin¹, L. S. Liyanage¹, C. Beasley¹, N. Patil¹, H. Wei¹, S. Mitra¹, H. S. P. Wong¹ (1.Stanford Univ. , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[C-1-5L] Effect of H₂ gas addition on Si Oxidation Process with Ar and O₂ Mixture Surface Wave Plasma

K. Takeda¹, M. Hori¹ (1.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] Improvement of thermal stability in High Density Ta₂O₅ 3D capacitor by additional thin SiO₂ layer

M. Detalle¹, H. Dekkers¹, G. Potoms¹, A. Phommahaxay¹, D. S. Tezcan¹, P. Soussan¹, G. Beyer¹ (1.IMEC , Belgium)

2011 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Pico-Ampere Switching ReRAM with Vertically Contacted 5 nm-diameter Carbon Nanotube Electrodes for BEOL-Based Memory

H. Nakano¹, M. Takahashi¹, T. Murakami¹, A. Kawabata¹, M. Sato¹, M. Nihei¹, N. Yokoyama¹ (1.GNC, AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] Performance Evaluation of a Logic-IP Compatible (LIC) Embedded DRAM with Cylinder Capacitors in Low-k/Cu BEOL Layers

I. Kume¹, N. Inoue¹, K. Hijioka¹, J. Kawahara¹, K. Takeda¹, N. Furutake¹, H. Shirai¹, K. Kazama¹, S. Kuwabara¹, M. Watarai¹, T. Sakoh¹, T. Takahashi¹, T. Ogura¹, T. Taiji¹, Y. Kasama¹, M. Sakamoto¹, M. Hane¹, Y. Hayashi¹ (1.Renesas Electronics Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[C-4-1] 1X nm Copper and Low-k reliability

Z. Tökei¹, K. Croes¹ (1.IMEC , Belgium)

2011 International Conference on Solid State Devices and Materials |PDF Download

[C-4-2] Characterization of Patterned SiOC film by STEM-VEELS at Lower (80kV) Acceralation Energy

Y. Otsuka¹, Y. Shimizu¹, T. Naijou¹, S. Ogawa² (1.Toray Research Center Inc., 2.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[C-4-3] Nano-scale Boron Mapping in Silicon Devices Using C_s-corrected STEM-EELS

N. Nakanishi¹, H. Arie¹, Y. Kunimune¹, T. Ide¹, Y. Hirose¹, N. Hattori¹, T. Koyama¹ (1.Renesas Electronics Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (101 - 110)

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