[K-9-5] RF Performance of Graphene Nano-Ribbon MOSFET vs. TFET

V. P. Sreenivas¹, K. T. Lam¹, G. Liang¹ (1.National Univ. of Singapore , Singapore)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-4-1] Analysis of Nanowire Dopant Incorporation and Distribution with Atom Probe Tomography and Nano Probe Scanning Auger Microscopy

J. Connell¹, U. Givan^1,2, J. S. Hammond³, D. F. Paul³, Y. Rosenwaks², L. J. Lauhon¹ (1.Northwestern Univ. , USA, 2.Tel Aviv Univ. , Israel, 3.Physical Electronics Inc. , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-4-2] Heteroepitaxy of Vertical InAs Nanowires on Thin Graphitic Films

Y. J. Hong¹, T. Fukui¹ (1.Hokkaido Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-4-4] Low voltage operable field emission triodes with high transconductance based on laterally grown ZnO nanowires

T. H. Lin¹, F. S. Tsai¹, Y. C. Tu¹, R. M. Ko¹, S. J. Wang¹ (1.National Cheng Kung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-4-3L] High-Frequency Characterization of Vertical InAs Nanowire Wrap-Gate FETs on Si(111) Substrates

S. Johansson¹, M. Egard¹, S. G. Ghalamestani¹, M. Borg¹, M. Berg¹, E. Lind¹, L. E. Wernersson¹ (1.Lund Univ. , Sweden)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-5-1] Epitaxial metal nanocrystal-semiconductor quantum dot plasmonic nanostructures

A. Urbanczyk¹, F. W. M. van Otten¹, R. Nötzel² (1.Eindhoven Univ. of Tech. , The Netherlands, 2.Technical Univ. of Madrid , Spain)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-5-2] Growth and Characterization of MnAs Nanoclusters Embedded in GaAs Nanowires by Metal-Organic Vapor Phase Epitaxy

M. Yatago¹, S. Sakita¹, S. Hara^1,2 (1.Hokkaido Univ., 2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-5-3] Study of the Indium Content Distribution of Core-shell InGaN/GaN Multi-Quantum Wells (MQWs) on GaN Nanorods

Y. J. Li¹, S. P. Chang¹, J. R. Chang¹, Y. C. Chen¹, K. P. Sou¹, Y. C. Hsu¹, H. C. Kuo¹, C. Y. Chang¹ (1.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-5-4] Study on the growth of In-rich InGaAs nanowires by selective-area metal-organic vapor phase epitaxy

Y. Kohashi¹, S. Hara¹, J. Motohisa¹ (1.Hokkaido Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[KM-6-1] Formation of graphene nanostructures on vicinal SiC surfaces

S. Tanaka¹, T. Kajiwara¹, Y. Kurisu¹, K. Morita¹ (1.Kyushu Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (371 - 380)

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