[F-4-2] Practical Consideration of Endurance and Performance for sub-90 nm Embedded 2T-FN Flash Memory beyond Smart Card IC

Y. K. Lee¹, B. Seo¹, J. Park¹, C. Jeon¹, Y. Jeong¹, S. B. Ryu¹, H. Yoo¹, Y. Kim¹, J. U. Han¹, E. Jung¹ (1.Samsung Electronics Co., Ltd. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-4-3] Direct Comparison of Electrical Charaeteristics for Double-Gate and Tri-Gate Flash Memories

Y. X. Liu¹, T. Kamei², T. Matsukawa¹, K. Endo¹, S. O'uchi¹, J. Tsukada¹, H. Yamauchi¹, Y. Ishikawa¹, T. Hayashida², K. Sakamoto¹, A. Ogura², M. Masahara^1,2 (1.AIST, 2.Meiji Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-5-1] A Novel Operating Scheme for 2-bit/Cell Split Gate SONOS Flash Memory

C. H. Chou¹, S. S. Chung¹, C. H. Lee², T. M. Hsieh², J. C. Liou², C. H. Chen³, P. ZP. Chen³, H. H. Chen³ (1.National Chiao Tung Univ., 2.Solid State System, 3.UMC , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-5-2] Re-examination of Performance and Reliability Degradation in MONOS Memory with Ultra-thin (~2nm) SiN Charge Trap Layers

H. Kusai¹, M. Morota¹, M. Oda¹, S. Fujii¹, K. Sakuma¹, M. Koyama¹ (1.Toshiba Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-5-3] Robust Data Retention and Superior Endurance SONOS Nonvolatile Memory with NH₃ Plasma Treated and Pd NCs Embedded Charge Storage Layer

S. H. Liu¹, W. L. Yang¹, S. T. Chen¹, M. R. Ye¹, T. S. Chao² (1.Feng Chia Univ., 2.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-6-1] Entropy-controlled Phase-change Memory

J. Tominaga¹, P. Fons¹, A. Kolobov¹, R. Simpson¹, X. Wang¹ (1.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-6-2] Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

C. Ahn¹, B. Lee¹, R. G. D. Jeyasingh¹, M. Asheghi¹, G. A. M. Hurkx², K. E. Goodson¹, H. S. P. Wong¹ (1.Stanford Univ. , USA, 2.NXP-TSMC Research Center , Belgium)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-6-3] Effect of Interfacial oxide layer on Switching Uniformity of Ge₂Sb₂Te₅ Based Resistive Switching Memory Device

J. Woo¹, S. Jung¹, S. M. Sadaf¹, E. Cha¹, H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-6-4] Improvement in resistive switching parameters by selecting the SET polarity in IrO_x/TaO_x/WO_x/W structure

A. Prakash¹, S. Maikap¹, C. S. Lai¹, H. Y. Lee², W. S. Chen², F. T. Chen², M. J. Kao², M. J. Tsai² (1.Chang Gung Univ., 2.ITRI , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-6-5] Reset Current Reduction with Excellent Filament Controllability by using Area Minimized and Field Enhanced Unipolar RRAM structure

K. C. Ryoo^1,2, S. H. Park¹, J. H. Oh^1,2, S. Jung¹, H. Jeong², B. G. Park¹ (1.Seoul National Univ., 2.Samsung Electronics Co., Ltd. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (211 - 220)

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