2017 International Conference on Solid State Devices and Materials

2017年9月19日〜 2017年9月22日
Sendai International Center

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763件中(611 - 620)

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[PS-6-04] Electrical Characteristics of n-GaN Schottky Contacts on Cleaved Surfaces of Free-Standing Substrates -- Metal Work-Function Dependence of Schottky Barrier Height --

^○H. Imadate¹, T. Mishima², K. Shiojima¹ (1.Univ. of Fukui (Japan), 2.Hosei Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-05] Investigation of the Interface Stability of the Metal/HfO₂/AlN/InGaAs MOS Devices

H. Binh Do¹, Q. H. Luc¹, M. T. H. Ha¹, S. H. Huynh¹, T. A. Nguyen¹, J. W. Lin¹, K. S. Yang¹,^○C. -C. F. Chiang¹, Y. -D. Jin¹, Y. C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-06] AlGaN/GaN Schottky Gate Fin-HEMT Fabricated on 8-inch Silicon (111) Substrate with Thin Buffer Layer

^○L. -C. Chang¹, C. -J. Dai¹, M. Yang¹, Y. -H. Jiang¹, C. -H. Wu¹ (1.National Taiwan Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-07] Effects of Channel Profile and Source/Drain Resistance on P-type SnO TFTs

^○M. -H. Wu¹, H. -C. Lin¹, P. -W. Li¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-08] Improved Electrical Stability of Thin-Film Transistors with Co-sputtered Ti-IGZO Channel and Zr_0.85Si_0.15O₂ Gate Dielectric

H. -P. Yan¹,^○ Z. -K. Zhuang¹ (1.National Cheng Kung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-09] An improved normally-off Al₂O₃/GaN MOSFET based on self-terminating gate-recess etching technique

^○H. Wang¹, J. Wang¹, J. Liu¹, M. Yu¹, B. Xie¹, W. Wu¹ (1.Peking Univ. (China))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-10] Fabrication of a Pt/Mg_xZn_1-xO/ZnO Schottky barrier photodiode utilizing a field plate structure

^○H. Endo¹, K. Takahashi¹, Y. Kashiwaba² (1.Iwate Indus. Res. Inst. (Japan), 2.Iwate Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-11] Electrical Performances of 1T-DRAM based on PNPN Tunneling FET with asymmetric Double-Gate Structure

^○Y. J. Yoon¹, J. H. Seo¹, M. S. Cho¹, B. G. Kim¹, I. M. Kang¹ (1.Kyungpook National Univ. (Korea))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-12] Transient-mode Simulation of MOS C-V Characteristics for GaN

^○K. Fukuda¹, H. Asai¹, J. Hattori¹, M. Shimizu¹, T. Hashizume² (1.AIST (Japan), 2.Hokkaido Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-13] Defect Observations of Ni/AlGaN/GaN Schottky Contacts on Si Substrates Using Scanning Internal Photoemission Microscopy

^○K. Shiojima¹, H. Konishi¹, H. Imadate¹, Y. Yamaoka^2,3, K. Matsumoto², T. Egawa³ (1.Univ. of Fukui (Japan), 2.Taiyo Nippon Sanso Corp. (Japan), 3.Nagoya Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |PDF ダウンロード

763件中(611 - 620)

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