[D-4-01 (Invited)] Neuromorphic computing with spintronic nanoscale oscillators

^○J. Torrejon¹, M. Riou¹, F. A. Araujo¹, S. Tsunegi², G. Khalsa³, D. Querlioz⁴, P. Bortolotti¹, V. Cros¹, A. Fukushima², H. Kubota², S. Yuasa², M. D. Stiles³, J. Grollier¹ (1.Unite Mixte de Physisque, CNRS/Thales (France), 2.AIST (Japan), 3.National Inst. of Standards and Tech. (USA), 4.Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay (France))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:00 PM - 2:30 PM |PDF Download

[D-4-02] Neuromorphic Transistor Achieved by Redox Reaction of WO₃ Thin Film

^○M. Jayabalan^1,2, K. Kawamura^1,3, M. Takayanagi^1,3, T. Tsuchiya¹, T. Higuchi³, R. Jayavel², K. Terabe¹ (1.NIMS (Japan), 2.Anna Univ. (India), 3.Tokyo Univ. of Sci. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:30 PM - 2:45 PM |PDF Download

[D-4-03] Artificial neuron operations and spike-timing-dependent plasticity (STDP) using memristive devices for brain-inspired computing

^○T. Marukame¹, R. Ichihara¹, M. Mori¹, Y. Nishi¹, S. Yasuda¹, T. Tanamoto¹, Y. Mitani¹ (1.Toshiba Corp. (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 2:45 PM - 3:00 PM |PDF Download

[D-4-04] Application of VO₂ metal-insulator transition to capacitor-less neuron circuits

^○T. Yajima¹, T. Nishimura¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |Thu. Sep 21, 2017 3:00 PM - 3:15 PM |PDF Download

[E-1-01 (Invited)] Reliability Characterizations for high-performance, low-power 10nm-FinFET technology

^○K. Choi¹, M. Jin¹, Jinju Kim¹, Jungin Kim¹, H. Sagong¹, Y. Kim¹, H. Shim¹, K. Kim¹, G. Kim¹, S. Lee¹, T. Uemura¹, J. Park¹, S. Shin¹, S. Pae¹ (1.Samsung Electronics Co., Ltd. (Korea))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 1:30 PM - 2:00 PM |PDF Download

[E-1-02] Comprehensive Analysis of Low-frequency Noise Variability Components in Bulk and FDSOI (SOTB) MOSFETs

^○K. Maekawa¹, H. Makiyama¹, Y. Yamamoto¹, T. Hasegawa¹, S. Okanishi¹, K. Sonoda¹, H. Shinkawata¹, T. Yamashita¹, S. Kamohara¹, Y. Yamaguchi¹ (1.Renesas Electronics Corp. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:00 PM - 2:20 PM |PDF Download

[E-1-03] Plasma Induced Damage Depending on Antenna Layers in Ring Oscillators

^○R. Kishida¹, J. Furuta¹, K. Kobayashi¹ (1.Kyoto Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:20 PM - 2:40 PM |PDF Download

[E-1-04] Revisited Study for Fluorine Implantation Impact on NBTI for Automotive I/O Device

^○T. Yoshida¹, K. Maekawa¹, S. Tsuda¹, T. Shimizu¹, M. Ogasawara¹, H. Aono¹ (1.Renesas Electronics Corp. (Japan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 2:40 PM - 3:00 PM |PDF Download

[E-1-05 (Late News)] Improved Performance and Sufficient Reliability In_0.53Ga_0.47As FinFET Using NH3 Plasma Treatment

^○K. S. Yang¹, Q. -H. Luc¹, C. C. Chang¹, J. W. Lin¹, C. -C. F. Chiang¹, H. B. Do¹, M. T. H. Ha¹, S. H. Huynh¹, Y. D. Jin¹, T. A. Nguyen¹, Y. -C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 3:00 PM - 3:15 PM |PDF Download

[E-2-01 (Invited)] Stacked-Wires FETs for Advanced CMOS Scaling

^○S. Barraud¹, V. Lapras¹, M. P. Samson², B. Previtali¹, J. M. Hartmann¹, N. Rambal¹, C. Vizioz¹, V. Loup¹, C. Comboroure², F. Triozon¹, N. Bernier¹, D. Cooper¹, M. Vinet¹ (1.CEA-Leti (France), 2.STMicroelectronics (France))

2017 International Conference on Solid State Devices and Materials |Wed. Sep 20, 2017 3:40 PM - 4:10 PM |PDF Download