[A-6-02] Spin Seebeck voltage enhancement by IrMn and Mn insertion at the interface between YIG and nonmagnetic layer

^○F. Nakata¹, T. Niimura¹, Y. Kurokawa¹, H. Yuasa^1,2 (1.Kyushu Univ. (Japan), 2.JST PRESTO (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 15:45 〜 16:00 |PDF ダウンロード

[A-6-03] Magnetic tunnel junctions with an equiatomic CoFeMnSi electrode

^○L. Bainsla¹, K. Suzuki^1,2, M. Tsujikawa^3,2, H. Tsuchiura^4,2, M. Shirai^3,2, S. Mizukami^1,2 (1.AIMR, Tohoku Univ. (Japan), 2.CSRN, Tohoku Univ. (Japan), 3.RIEC, Tohoku Univ. (Japan), 4.Grad. Sch. Engn., Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:00 〜 16:15 |PDF ダウンロード

[A-6-04] Spin Wave and Phonon Excitation by the Magnetoelectric Effect

^○D. Tierno^1,2, T. Jost³, M. Geilen³, T. Brächer³, M. Heyns^1,2, B. Hillebrands³, I.P. Radu¹, P. Pirro³, F. Ciubotaru¹, C. Adelmann¹ (1.imec (Belgium), 2.KU Leuven (Belgium), 3.TU Kaiserslautern (Germany))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:15 〜 16:30 |PDF ダウンロード

[A-7-01 (Invited)] Controlling spin-orbit interaction in scalable silicon-MOS quantum dot architectures

^○T. Tanttu¹, B. Hensen¹, K.W. Chan¹, H. Yang¹, W. Huang¹, M. Fogarty¹, D. Culcer^1,2, K. Itoh³, A. Laucht¹, A. Morello¹, A. Dzurak¹ (1.The Univ. of New South Wales (Australia), 2.ARC Centre for Excellence in Future Low-Energy Electronics Technologies (Australia), 3.Keio Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 09:00 〜 09:30 |PDF ダウンロード

[A-7-02] Control fidelities in isotopically natural and enriched silicon quantum dot qubits

^○K. Takeda¹, J. Yoneda¹, T. Otsuka^1,2,3, T. Nakajima¹, M. Delbecq^1,4, G. Allison¹, A. Noiri¹, Y. Hoshi⁵, N. Usami⁶, K. Itoh⁷, S. Oda⁸, T. Kodera⁹, S. Tarucha¹⁰ (1.RIKEN, CEMS (Japan), 2.JST, PRESTO (Japan), 3.Tohoku Univ. (Japan), 4.LPA, Ecole Normale Supérieure-PSL Res. Univ. (France), 5.IIS, Univ. of Tokyo (Japan), 6.Nagoya Univ. (Japan), 7.Keio Univ. (Japan), 8.Dept. of Physical Electronics and Quantum Nanoelectronics Res. Center, Tokyo Tech (Japan), 9.Dept. of Electrical and Electronic Engineering, Tokyo Tech (Japan), 10.Dept. of Applied Physics, Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 09:30 〜 09:45 |PDF ダウンロード

[A-7-03] Coherent oscillations of charge states in a Si single-electron pump at 4.2 K

^○G. Yamahata¹, S. Ryu², H.-S. Sim², N. Johnson¹, M. Kataoka³, A. Fujiwara¹ (1.NTT Basic Res. Labs. (Japan), 2.KAIST (Korea), 3.National Physical Lab. (UK))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 09:45 〜 10:00 |PDF ダウンロード

[A-7-04] Optical Control of the Silicon–Vacancy Center in Diamond

^○M. Hanks^1,2, W.J. Munro^3,4,2, K. Nemoto^2,1 (1.Sokendai (The Graduate Univ. for Advanced Studies) (Japan), 2.National Inst. of Informatics (Japan), 3.NTT Basic Res. Labs. (Japan), 4.NTT Res. Center for Theoretical Quantum Physics (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 10:00 〜 10:15 |PDF ダウンロード

[A-7-05] Hybridization: A tool to engineer and probe novel quantum metamaterials

^○W. Munro^1,2,4, A. Angerer³, S. Putz³, T. Astner³, J. Schmiedmayer³, J. Majer^4,3, K. Nemoto⁴ (1.NTT Basic Research Labs. (Japan), 2.Research Center for Theoretical Quantum Physics, NTT Corporation (Japan), 3.Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien (Austria), 4.National Institute of Informatics (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 10:15 〜 10:30 |PDF ダウンロード

[A-7-06] Qubit-resonator coupling system for quantum annealing

^○A. Tomonaga¹, H. Mukai¹, Y. Zhou², R. Wang¹, Y. Nakajima¹, J.S. Tsai^1,2 (1.Dept. of Phys., Tokyo Univ. of Sci. (Japan), 2.CEMS, RIKEN (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 10:30 〜 10:45 |PDF ダウンロード

[A-8-01] Enhancement of Spin-orbit Torque by CoO_x Layer Insertion into Co/Pt Interface

^○K. Hasegawa¹, Y. Hibino¹, M. Suzuki², T. Koyama¹, D. Chiba¹ (1.Univ. of Tokyo (Japan), 2.JASRI (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 14:00 〜 14:15 |PDF ダウンロード