[M-3-03] Interface Traps "Extrinsically" Deliver MIT in Monolayer MoS₂ FET

^○N. Fang¹, K. Nagashio¹ (1.The University of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:45 〜 10:00 |PDF ダウンロード

[M-3-04] High Mobility Anisotropic Black Phosphorus Nanoribbons Field-Effect Transistor: Impact of Crystal Orientation, Dimension Scaling and Hydrogen Anneal

^○X. Feng¹, X. Huang¹, L. Chen¹, L. Wang¹, K.-W. Ang¹ (1.National Univ. of Singapore (Singapore))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 10:00 〜 10:15 |PDF ダウンロード

[M-3-05 (Late News)] Detection of Human-Infectious Influenza Virus Using Sialoglycan-Modified Graphene Field-Effect Transistor

^○T. Ono¹, T. Kawata¹, S. Ushiba², Y. Kanai¹, Y. Ohno^1,3, K. Maehashi^1,4, K. Inoue¹, Y. Watanabe⁵, S. Nakakita⁶, Y. Suzuki⁷, T. Kawahara⁷, M. Kimura², K. Matsumoto¹ (1.ISIR, Osaka Univ. (Japan), 2.Murata Manufac. (Japan), 3.Tokushima Univ. (Japan), 4.Tokyo Univ. of Agriculture and Technology (Japan), 5.Kyoto Prefectural Univ. of Medicine (Japan), 6.Kagawa Univ. (Japan), 7.Chubu Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 10:15 〜 10:30 |PDF ダウンロード

[M-4-01 (Invited)] Group IV nanowires as model systems to explore phase behaviour, nucleation and interface dynamics in nanoscale systems

^○S. Hofmann¹, P. Periwal¹, F. Panciera¹, F.M. Ross² (1.Univ. of Cambridge (UK), 2.IBM (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 10:45 〜 11:15 |PDF ダウンロード

[M-4-02] Twinning superlattice formation in III-V compound semiconductor nanowires revisited: effects of surface and twinning energies

^○T. Akiyama¹, K. Nakamura¹, T. Ito¹ (1.Mie University (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:15 〜 11:30 |PDF ダウンロード

[M-4-03] Investigation of Nanoscale Voids in Sb-Doped p-Type ZnO Nanowires

^○K.C. Pradel¹, J. Uzuhashi¹, T. Takei¹, T. Ohkubo¹, K. Hono¹, N. Fukata¹ (1.NIMS (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:30 〜 11:45 |PDF ダウンロード

[M-4-04] Dual Impact of Impurity on Crystal Growth Interface and Electrical Homogeneity of Metal Oxide Nanowires in Vapor-Liquid-Solid Process

^○Z. Zhu¹, T. Takahashi², K. Nagashima^1,2, M. Kanai², G. Zhang², H. Anzai¹, T. Yanagida^1,2 (1.Interdisciplinary Graduate School of Engineering Sci., Kyushu Univ. (Japan), 2.Inst. for Materials Chemistry and Engineering, Kyushu Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:45 〜 12:00 |PDF ダウンロード

[M-5-01] Gap Width Dependence of Transport through Quantum Point Contact in hBN/Graphene/hBN in the Quantum Hall Regime

^○N.F. Ahmad^1,2, K. Komatsu², S. Moriyama², Y. Morita³, K. Watanabe², T. Taniguchi², A.M. Hashim¹, Y. Wakayama², S. Nakaharai² (1.Universiti Teknologi Malaysia (Malaysia), 2.NIMS (Japan), 3.Gunma University (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 13:30 〜 13:45 |PDF ダウンロード

[M-5-02] Transverse Thermoelectric Effect of Graphene Isotopic Heterostructures

^○Y. Mochizuki¹, K. Takei¹, S. Akita¹, T. Arie¹ (1.Osaka Prefecture Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 13:45 〜 14:00 |PDF ダウンロード

[M-5-03] Low temperature electrical transport properties of suspended graphene nanoribbons grown by plasma CVD

^○W. Okita¹, H. Suzuki¹, T. Kaneko¹, T. Kato^1,2 (1.Tohoku Univ. (Japan), 2.JST-PRESTO (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:00 〜 14:15 |PDF ダウンロード