[C-1-02] Investigation of Full Bias Space Degradation in Nanosheet nFETs with HfO₂ Gate Dielectric by 3D-KMC Method

^○W. Chen¹, L. Cai¹, Y. Li¹, K. Wang¹, X. Zhang^1,2, X. Liu¹, G. Du¹ (1.Inst. of Microelectronics, Peking Univ. (China), 2.National Key Lab. of Sci. and Tech. on Micro/Nano Fabrication (China))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 14:30 〜 14:45 |PDF ダウンロード

[C-1-03] Challenges and Opportunities for Vertical Nanowire FETs: Device Design and Fabrication

^○A. Veloso¹, P. Matagne¹, T. Huynh-Bao¹, G. Eneman¹, R. Loo¹, K. Wostyn¹, S. Brus¹, J. Boemmels¹, D. Mocuta¹, J. Ryckaert¹ (1.Imec (Belgium))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 14:45 〜 15:00 |PDF ダウンロード

[C-1-04] Hybrid-type Complementary Inverters using Semiconducting Single Walled Carbon Nanotube Networks and In-Ga-Zn-O Nanofibers

^○W.C. Jung¹, H.S. Choi¹, J.W. Shin¹, E.K. Hong¹, S. Yoon¹, I. Hwang¹, W.J. Cho¹ (1.Univ. of Kwangwoon (Korea))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 15:00 〜 15:15 |PDF ダウンロード

[C-2-01] A CMOS-Compatible Current Boosting Scheme in 14 nm FinFET Technology

^○Y. Widjaja¹, J. Wilson¹, T. Nguyen¹, J.W. Han¹, C. Norwood¹, P. Chang¹, D. Maheshwari¹, S. Lai¹, P. Vorenkamp¹, Z. Or-Bach¹, V. Moroz², A. Kucherov², Y. Nishi³ (1.Zeno Semiconductor, Inc. (USA), 2.Synopsys, Inc. (USA), 3.Stanford Univ. (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 15:30 〜 15:45 |PDF ダウンロード

[C-2-02] Experimental NBTI Investigation for 14 nm FinFETs Utilizing Sub-1 ns Fast V_th Measurement (FVM) Technique

^○X. Yu^1,2,R. Cheng¹, W. Liu¹, Y. Qu¹, J. Han¹, J. Lu³, B. Chen¹, Y. Zhao¹ (1.Zhejiang University (China), 2.Zhejiang Lab (China), 3.Hunan University (China))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 15:45 〜 16:00 |PDF ダウンロード

[C-2-03] Temperature Effect on DIBL Variability in Bulk and SOTB MOSFETs

^○S. Gao¹, T. Mizutani¹, K. Takeuchi¹, M. Kobayashi¹, T. Hiramoto¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 16:00 〜 16:15 |PDF ダウンロード

[C-2-04] Optimization of RTN FDSOI Device Performance for Analog/Mixed Signal and Low Noise Applications

^○L. Pirro¹, L. Mueller-Meskamp¹, A. Zaka¹, E. Nowak¹, N. Tripsas¹, A. Mittal¹, J. Hoentschel¹ (1.GlobalFoundries (Germany))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 16:15 〜 16:30 |PDF ダウンロード

[C-3-01 (Invited)] Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography

^○K. Tsutsui¹, T. Matsushita², T. Muro², Y. Morikawa³, K. Natori¹, T. Hoshii¹, K. Kakushima¹, H. Wakabayashi¹, K. Hayashi⁴, F. Matsui⁵, T. Kinoshita² (1.Tokyo Tech (Japan), 2.JASRI (Japan), 3.Osaka Univ. (Japan), 4.Nagoya Inst. of Tech. (Japan), 5.Inst. for Molecular Sci. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:00 〜 09:30 |PDF ダウンロード

[C-3-02] Impact of pFET channel formation and patterning on the strain in SiGe nanosheets investigated by µRaman spectroscopy

^○L. Gaben¹,R. Berthelon^2,1, F. Andrieu¹, D. Rouchon¹, D. Dutartre², F. Roze², M. Vinet¹ (1.CEA LETI (France), 2.STMicrolectronics (France))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:30 〜 09:45 |PDF ダウンロード

[C-3-03] Introducing a highly efficient stressor for pMOS devices by controlling epitaxy and Ge enrichment in advanced planar FDSOI CMOS technology

^○J. Kanyandekwe¹, D. Barge², P. Morin², L. Grenouillet¹, M. Labrot², S. Maitrejean¹, E. Augendre¹, V. Lapras¹, Y. Morand², D. Dutartre², M. Gros-Jean², O. Gourhant², C. Gaumer², N. Rambal¹, D. Cooper¹, L. Clement² (1.Cea-Leti (France), 2.STMicroelectronics (France))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:45 〜 10:00 |PDF ダウンロード