[C-7-05] Electrical characteristic of La₂O₃/Si MOSFETs with ferroelectric-type hysteresis

S. Takagi¹,^○K. Endo¹, K. Kato¹, M. Takenaka¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 10:00 〜 10:15 |PDF ダウンロード

[C-7-06] Mitigating Edge Effects In Gate-Normal Tunneling Feld-Effect Transistors Using a Ti/TiN Dual-Metal Gate

S. Glass¹,^○M. Liu¹, K. Kato², J.-M. Hartmann³, S. Takagi², D. Buca¹, S. Mantl¹, Q.-T. Zhao¹ (1.Res. Center Juelich (Germany), 2.Univ. of Tokyo (Japan), 3.Univ. of Grenoble and CEA, LETI (France))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 10:15 〜 10:30 |PDF ダウンロード

[C-7-07] Demonstration of Ge Complementary Tunneling Field-Effect Transistors with Dopant Segregation NiGe Source/Drain

^○J. Li¹, Y. Qu¹, S. Zeng¹, Y. Zhang¹, R. Cheng¹, R. Zhang¹, Y. Zhao¹ (1.Zhejiang Univ. (China))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 10:30 〜 10:45 |PDF ダウンロード

[C-8-01] Fabrication of InAs-on-Insulator structures by Smart Cut method with hydrogen implantation at room temperature

^○K. Sumita¹, K. Kato¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 14:00 〜 14:15 |PDF ダウンロード

[C-8-02] In-situ Plasma Conditioning of InGaAs / High-κ Interface Layers for Defect Density Control Compatible with Scalable FinFET Integration

^○J. Rozen¹, Y. Ogawa², M. Hatanaka², T. Ando¹, E. Cartier¹, M.M. Frank¹, M. Hopstaken¹, J. Bruley¹, K.-T. Lee¹, J.-B. Yau¹, Y. Sun¹, R.L. Bruce¹, C. D'Emic¹, X. Sun¹, K. Suu², R.T. Mo¹, E. Leobandung¹, V. Narayanan¹ (1.IBM Research (USA), 2.Ulvac, Inc. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 14:15 〜 14:30 |PDF ダウンロード

[C-8-03] Suppression of Band-to-Band Tunneling in III-V MOSFETs on Silicon Using Source and Drain Spacers

^○C.B. Zota¹, C. Convertino¹, D. Caimi¹, L. Czornomaz¹ (1.IBM Research Zurich (Switzerland))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 14:30 〜 14:45 |PDF ダウンロード

[C-8-04] Low Resistance III-V Heterocontacts to N-Ge

^○J. Suh¹, P. Ramesh¹, A.C. Meng¹, A. Kumar¹, A. Kumar¹, S. Gupta¹, R. Islam¹, P. McIntyre¹, K. Saraswat¹ (1.Stanford University (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 14:45 〜 15:00 |PDF ダウンロード

[C-8-05] High Performance Ge pMOSFET with Nitrided Gate Dielectrics and Microwave Annealing

^○C.Y. Kao¹, S.H. Yi¹, C.W. Hsu¹, W.F. Chi¹, T.M. Li¹, K.S. Chang-Liao¹ (1.National Tsing Hua University (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 15:00 〜 15:15 |PDF ダウンロード

[C-8-06] Electron and Acoustic Phonon Confinement in Ultrathin-Body Ge on Insulator

^○V. Poborchii¹, W.H. Chang¹, H. Ishii¹, N. Uchida¹, J. Groenen², P. Geshev³, T. Irisawa¹, T. Maeda¹ (1.AIST (Japan), 2.CEMES-CNRS and Universite de Toulouse, (France), 3.Institute of Thermophysics of the Russian Academy of Sciences (Russia))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 15:15 〜 15:30 |PDF ダウンロード

[C-8-07 (Late News)] Comprehensive Study of Variability in Poly-Si Channel Nanowire Transistor ~ Grain Boundary effect in Variability ~

^○K. Ota¹, T. Kawai¹, M. Saitoh¹ (1.Toshiba Memory Corp. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 15:30 〜 15:45 |PDF ダウンロード