[M-5-04] Ternary Graphene Field Effect Transistors using Chemically doped Graphene

^○S.Y. Kim^1,2, M.B. Kim^1,2, H.J. Hwang¹, B. Allouche¹, B.H. Lee^1,2 (1.Center for Emerging Electric Devices and Systems, GIST (Korea), 2.School of Material Sci. and Eng., GIST (Korea))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:15 〜 14:30 |PDF ダウンロード

[M-5-05] Fabrication of graphene nanoribbon transistors with high on/off ratio using advanced plasma CVD

^○N. Ogura¹, Y. Wato¹, H. Suzuki¹, T. Kaneko¹, T. Kato^1,2 (1.Tohoku Univ. (Japan), 2.JST-PRESTO (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:30 〜 14:45 |PDF ダウンロード

[M-5-06] Piezoelectrically modulated touch pressure sensor using graphene barristor

^○H.J. Hwang¹, S.-Y. Kim^1,2, S.C. Kang^1,2, B. Allouche¹, B.H. Lee^1,2 (1.Gwangju Inst. of Sci. and Tech., Center for Emerging Electronic Devices and Systems (Korea), 2.Gwangju Inst. of Sci. and Tech., School of Material Science and Engineering (Korea))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:45 〜 15:00 |PDF ダウンロード

[M-6-01 (Invited)] Using graphene as an epitaxial substrate and transparent electrode for GaN/AlGaN UV LEDs

^○H. Weman^1,2 (1.NTNU (Norway), 2.CrayoNano AS (Norway))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 15:15 〜 15:45 |PDF ダウンロード

[M-6-02] Determining the Carrier Mobility in Single InAs Nanowires from Magnetotransport Measurements

^○P. Uredat¹, R. Kodaira², R. Horiguchi², S. Hara², P.J. Klar¹, M.T. Elm¹ (1.Justus Liebig Univ. Giessen (Germany), 2.Res. Center for Integrated Quantum Electronics (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 15:45 〜 16:00 |PDF ダウンロード

[M-6-03] Nanowire-based telecom-band light emitting diodes

^○G. Zhang¹, D. Gnatek¹, M. Takiguchi¹, K. Tateno¹, S. Sasaki¹, T. Tawara¹, H. Gotoh¹ (1.NTT Basic Res Labs (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:00 〜 16:15 |PDF ダウンロード

[M-6-04] A semiconductor quantum light emitting diode for the standard telecom window around 1550 nm

^○T. Muller¹, J. Skiba-Szymanska¹, A.B. Krysa², J. Huwer¹, M. Felle^1,3, M. Anderson^1,4, R.M. Stevenson¹, J. Heffernan², D.A. Ritchie⁴, A.J. Shields¹ (1.Toshiba Research Europe Ltd. (UK), 2.University of Sheffield (UK), 3.Cambridge University Engineering Department (UK), 4.Cavendish Laboratory, University of Cambridge (UK))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:15 〜 16:30 |PDF ダウンロード

[M-7-01] V_th control in p-type graphene barristor using a polymer doping process

^○S.M. Kim^1,2, S. Heo^1,2, H. Lee^1,2, H.I. Lee^1,2, K. Kim^1,2, Y.J. Kim^1,2, S.Y. Kim^1,2, B. Allouche¹, B.H. Lee^1,2 (1.Gwangju Inst. of Sci. and Tech. (Korea), 2.Center for Emerging Electric Devices and Systems (Korea))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 09:00 〜 09:15 |PDF ダウンロード

[M-7-02] Study on origin for D_it through SS in monolayer MoS₂/h-BN/graphite FET

^○S. Toyoda¹, T. Taniguchi², K. Watanabe², K. Nagashio¹ (1.Univ. of Tokyo (Japan), 2.NIMS (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 09:15 〜 09:30 |PDF ダウンロード

[M-7-03] p-MoS₂/HfS₂ van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO₂ Dielectric

^○W. Zhang¹, S. Netsu¹, T. Kanazawa¹, T. Amemiya², Y. Miyamoto¹ (1.Dept. Electrical and Electronic Engineering, Tokyo Tech (Japan), 2.IIR, Tokyo Tech (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 09:30 〜 09:45 |PDF ダウンロード