[G-1-03] Inverter Using CAAC-IGZO FET with 60-nm Gate Length Fabricated in BEOL

H. Kunitake¹, ^○T. Koshida¹, K. Ohshima¹, K. Tsuda¹, N. Matsumoto¹, S. Ohshita¹, Y. Okazaki¹, T. Murakawa¹, T. Atsumi¹, T. Nakura², K. Kato¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan), 2.Fukuoka Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:45 〜 15:00 |PDF ダウンロード

[G-1-04] Cost-Effective and BEOL-Compatible Double-Gate IGZO Recess-Channel TFT Technology Enables IoT ICs in More-than-Moore Era

^○Y.-A. Huang¹, K.-P. Peng¹, Y.-C. Meng¹, P.-W. Li¹, H.-C. Lin¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:00 〜 15:15 |PDF ダウンロード

[G-1-05 (Late News)] Mobility of Hydrogen in Oxygen Vacancies in IGZO models with Different Crystallinities

^○T. Kanagawa¹, M. Takahashi¹, T. Nakayama¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:15 〜 15:30 |PDF ダウンロード

[G-2-01 (Invited)] Selective Laser Annealing Technology for LTPS Thin Film Transistors Fabrications

^○T. Goto¹, K. Imokawa², T. Yamada², K. Saito³, J. Gotoh³, H. Ikenoue², S. Sugawa¹ (1.Tohoku Univ. (Japan), 2.Kyushu Univ. (Japan), 3.V Technology Co., Ltd. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:45 〜 16:15 |PDF ダウンロード

[G-2-02] Grain Growth Control with a Dot Mask in Selective Laser Annealing for Stable LTPS Thin Films Transistors Fabrication

^○K. Imokawa^1,2, T. Yamada¹, K. Saito³, J. Gotoh³, T. Goto⁴, D. Nakamura¹, H. Ikenoue^1,2 (1.Graduate School of Information Science and Electrical Engineering, Kyushu Univ. (Japan), 2.Department of Gigaphoton Next GLP, Kyushu Univ. (Japan), 3.V-Technology Co., Ltd. (Japan), 4.New Industry Creation Hatchery Center, Tohoku Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 16:15 〜 16:30 |PDF ダウンロード

[G-2-03] Effects of Grain Boundary and Counter Doping on P-Channel Polycrystalline Germanium Thin-Film Transistors via Continuous-Wave Laser Crystallization

^○Y.-S. Li¹, C.-T. Chen¹, J.-D. Luo¹, K.-C. Chuang¹, W.-S. Li¹, H.-C. Cheng¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 16:30 〜 16:45 |PDF ダウンロード

[G-2-04] Two-dimensional Visualization of Temperature Distribution in Molten Region of a-Si Film during Atmospheric Pressure Thermal Plasma Jet Annealing

^○Y. Mizukawa¹, A. Kameda¹, H. Hanafusa¹, S. Higashi¹ (1.Hiroshima Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 16:45 〜 17:00 |PDF ダウンロード

[G-2-05] Impact of As Doping in Amorphous Ge on Solid-Phase Crystallization

^○M. Saito¹, K. Moto¹, T. Nishida¹, T. Suemasu¹, K. Toko¹ (1.Univ. of Tsukuba (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 17:00 〜 17:15 |PDF ダウンロード

[G-2-06 (Late News)] High mobility Si TFTs on crystalline Si stripe formed by micro chevron laser beam scanning

^○W.Y. Yeh¹, M. Hirasue¹, T. Tsuchiya¹ (1.Shimane Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 17:15 〜 17:30 |PDF ダウンロード

[G-4-01] Development of High Yield Layer Transfer Process of Single Crystalline Silicon Thin Film on Plastic Substrate and Its Application to Floating Gate Memory Fabrication

^○T. Hirano¹, R. Mizukami¹, T. Yamashita¹, F. Kondo¹, H. Hanafusa¹, Y. Mizukawa¹, S. Higashi¹ (1.Hiroshima Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 15:30 〜 15:45 |PDF ダウンロード