[J-6-04] High-performance IGZO TFTs with Cu-based Multilayer Electrodes using MoAl Alloy as Buffer Layers

〇Chuan Liu¹, Zhaogui Wang¹, Yafang Wang¹, Gongtan Li², Shan Li² (1. Sun Yat-Sen University(China), 2. Shenzhen China Star Optoelectronics Technology Co., Ltd(China))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 5:00 PM - 5:15 PM |PDF Download

[J-6-05] Enhanced Electrical Performance and Reliability of Ti-SZTO Thin-Film Transistors with Hf_1-xSi_xO₂ Gate Dielectrics Using Co-sputtering Technique<gdiv></gdiv>

〇Chen-En Lin¹, Shui-Jinn Wang¹, Rong-Ming Ko² (1. Inst. of Microelectronics, Dept. of Electrical Engineering, National Cheng Kung University(Taiwan), 2. College of Electrical Engineering and Computer Science, National Cheng Kung University(Taiwan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 5:15 PM - 5:30 PM |PDF Download

[J-6-06] Electronic Structure of Amorphous CuI, a p-type Transparent Semiconductor

〇John Robertson¹, Zhaofu Zhang¹, Yuzheng Guo² (1. Cambridge University(UK), 2. Swansea Univ.(UK))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 5:30 PM - 5:45 PM |PDF Download

[K-1-01 (Invited)] Functionalization of Group IV Semiconductor Nanowire Channels for High-Speed Transistor Applications

〇Naoki Fukata^1,2 (1. NIMS(Japan), 2. Univ. of Tsukuba(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 2:00 PM - 2:30 PM |PDF Download

[K-1-02 (Invited)] Plasmonic Nanomaterials Based on Metal-Coated Porous Silicon: Fabrication,Characterization and Application in Biosensing

〇Hanna Bandarenka¹ (1. Belarusian State University of Informatics and Radioelectronics(Belarus))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 2:30 PM - 3:00 PM |PDF Download

[K-1-03] Adsorption States of an Oxygen Molecule on Si(001) Surfaces

〇Nao Kadowaki^1,2, Masato Oda^1,2, Jun Nara² (1. Wakayama Univ.(Japan), 2. NIMS(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 3:00 PM - 3:15 PM |PDF Download

[K-1-04] A Framework for Sensitive Assessment of Plasma Process-Induced Damage in Si Substrates

〇Takashi Hamano¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1. Kyoto Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 3:15 PM - 3:30 PM |PDF Download

[K-10-01] Single crystal growth and characterization of HfS_2(1-x)Se_2x ternary alloys

〇Cheng-Wen Wang¹, Der-Yuh Lin¹, Hung-Pin Hsu² (1. National Changhua Univ. of Education(Taiwan), 2. Ming Chi Univ. of Technology(Taiwan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 4:00 PM - 4:15 PM |PDF Download

[K-10-02] Growth and scintillation properties of ternary eutectic scintillators for radiation imaging applications.

〇Yui Takizawa¹, Kei Kamada^1,2,3, Masao Yoshino¹, Akihiro Yamaji², Syunsuke Kurosawa^1,2, Yuui Yokota¹, Hiroki Sato², Satoshi Toyoda², Yuji Ohashi², Takashi Hanada¹, Vladimir Kochurikhin³, Akira Yoshikawa^1,2,3 (1. Institute for Material Research, Tohoku University(Japan), 2. New Industry Creation Hatchery Center(Japan), 3. C&A corporation(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 4:15 PM - 4:30 PM |PDF Download

[K-10-03] Growth of single orientation 3C-SiC applying anisotropic step etching on a 4H-SiC substrate

〇Hiroyuki Sazawa¹, Hirotaka Yamaguchi¹, Kazutoshi Kojima¹, Hajime Okumura¹, Hiroshi Yamaguchi¹ (1. AIST(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 4:30 PM - 4:45 PM |PDF Download