2020 International Conference on Solid State Devices and Materials

Sep 27, 2020 - Sep 30, 2020

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415 results (121 - 130)

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[D-4-06 (Late News)] Development of Analytical Channel Mobility Model Based on Study of Universal Mobility in SiC MOSFET

〇Teruyuki Ohashi¹, Ryosuke Iijima¹, Hiroshi Yano² (1. Toshiba Corp.(Japan), 2. Univ. of Tsukuba(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 12:15 PM - 12:30 PM |PDF Download

[D-5-01] 1.8kV AlGaAs/GaAs/AlGaAs Diode Having Balanced Charges of Donors and Acceptors in Consideration of Residual Carbon Impurities

〇Hiroaki Ogawa¹, Soichiro Kawata¹, Naotaka Iwata¹ (1. Toyota Tech. Inst.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:00 PM - 2:15 PM |PDF Download

[D-5-02] Impact of Growth Direction on Crystal Quality and DC Characteristics of In(Ga)P/InGaAsSb DHBTs Transferred onto SiC Substrate

〇Takuya Hoshi¹, Yuta Shiratori¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1. NTT Device Technology Labs., NTT Corp.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:15 PM - 2:30 PM |PDF Download

[D-5-03] Responsivity Analysis in InGaAs/InAlAs HEMT Terahertz Detector Integrated with Patch Antenna

〇Safumi Suzuki¹, Tomohiro Otsuka¹, Yugo Ueda¹ (1. Tokyo Tech(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:30 PM - 2:45 PM |PDF Download

[D-5-04] Study of Leakage Mechanisms in III-V Nano-ridge diode on Silicon

〇Olga - Syshchyk^1,2, Vasyl - Motsnyi², Renaud Puybaret², Jiwon Lee², Gauri Karve², Bob Puers¹, Chris Van Hoof^1,2 (1. KU Leuven, Belgium(Belgium), 2. Interuniversity Microelectronics Center (IMEC)(Belgium))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:45 PM - 3:00 PM |PDF Download

[D-5-05 (Invited)] High-Performance III-V-On-Si Transistor Technology Platform

〇Cezar B. Zota¹, Daniele Caimi¹, Marilyne Sousa¹, Kirsten Moselund¹ (1. IBM Research Europe(Switzerland))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 3:00 PM - 3:30 PM |PDF Download

[D-6-01 (Invited)] Recent Progress of Silicon Carbide Super-Junction MOSFETs

〇Ryoji Kosugi¹, Shiyang Ji¹, Kazuhiro Mochizuki¹, Takeharu Kuroiwa¹, Hiroshi Yamaguchi¹ (1. AIST(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 4:00 PM - 4:30 PM |PDF Download

[D-6-02] Anisotropic temperature distribution causing an incremental trend in the saturated drain-current of SiC MOSFET

〇Shogo Ogawa¹, Taketoshi Tanaka¹, Yohei Nakamura¹, Ken Nakahara¹ (1. Rohm Co. Ltd.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 4:30 PM - 4:45 PM |PDF Download

[D-6-03] Reactions of NO molecule with carbon-related defects at 4H-SiC/SiO₂ interface under dry oxidation conditions

〇Tsunashi Shimizu¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1. Mie Univ.(Japan), 2. Shimane Univ.(Japan), 3. Keio Univ.(Japan), 4. Nagoya Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 4:45 PM - 5:00 PM |PDF Download

[D-6-04] Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

〇Shogo Sekine¹, Masakazu Okada², Teruaki Kumazawa², Mitsuru Sometani², Hirohisa Hirai², Naoya Serizawa¹, Ryu Hasunuma¹, Mitsuo Okamoto², Shinsuke Harada² (1. Univ. of Tsukuba(Japan), 2. Inst. Advanced Industrial Science and Technology(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 5:00 PM - 5:15 PM |PDF Download

415 results (121 - 130)

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