[K-2-05] Low-Temperature Solid-Phase Crystallization Combined with a-Si Under-Layer for High Sn Concentration GeSn Film without Sn-Segregation

〇Yuta Tan¹, Daiki Tsuruta¹, Taizoh Sadoh¹ (1. Kyushu Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 5:00 PM - 5:15 PM |PDF Download

[K-2-06] High Carrier Mobility of Sn-Doped Ge Thin-Films (~20 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization

〇Masanori Chiyozono¹, Xiangsheng Gong¹, Taizoh Sadoh¹ (1. Kyushu Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 5:15 PM - 5:30 PM |PDF Download

[K-4-01 (Invited)] Gate Stack Technology for Advanced GaN-based MOS Devices

〇Heiji Watanabe¹ (1. Osaka University, Graduate School of Engineering(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 11:00 AM - 11:30 AM |PDF Download

[K-4-02] impact of selective thermal etching in mixed H₂/NH₃ atmosphere on crystal quality of N-polar AlGaN/GaN heterostructures

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1. NTT Device Technology Labs, NTT Corporation(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 11:30 AM - 11:45 AM |PDF Download

[K-4-03] Structural and Luminescence Characteristics of Trench Defects in Red-emitting InGaN/GaN on Single-crystal GaN Substrate

〇Takashi Tange¹, Taeko Matsukata¹, Takumi Sannomiya¹ (1. Tokyo Tech(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 11:45 AM - 12:00 PM |PDF Download

[K-5-01] Classification of in-situ RHEED Images Using Principal Component Analysis

〇Jinkwan Kwoen¹, Yasuhiko Arakawa¹ (1. NanoQuine, Univ. of Tokyo(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:00 PM - 2:15 PM |PDF Download

[K-5-02] Impact of the Precursor Conditions on the Solid-phase Crystallization of Amorphous GaAs Thin Films on Glass and Plastic Substrates

〇Masaya Saito¹, Takeshi Nishida¹, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:15 PM - 2:30 PM |PDF Download

[K-5-03] Highly efficient electron-photon spin conversion using InGaAs quantum dots with p-doped capping barrier

〇Shino Sato¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1. Hokkaido Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:30 PM - 2:45 PM |PDF Download

[K-5-04] Spin relaxation property after spin transfer from a semiconductor superlattice barrier to quantum dots

〇Saeko Hatakeyama¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1. Hokkaido Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 2:45 PM - 3:00 PM |PDF Download

[K-5-05 (Late News)] AlGaAs/GaAs superlattice grown by molecular beam epitaxy for its application to semiconductor photocathode

〇Iori Morita¹, Fumitaro Ishikawa¹, Anna Honda², Daiki Sato², Atsushi Koizumi², Tomohiro Nishitani^2,3, Masao Tabuchi⁴ (1. Univ. of Ehime.(Japan), 2. Photo electron Soul Inc.(Japan), 3. IMaSS of Nagoya Univ.(Japan), 4. SRC of Nagoya Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2020 3:00 PM - 3:15 PM |PDF Download