[C-9-03] An Inverted T-shaped MEMS Capacitive Pressure Sensor
with Multiple-Diaphragm Anchor and On-chip Temperature Sensor

Yoshihiko Kurui¹, Fumitaka Ishibashi¹, Kei Masunishi¹, Tomohiro Saito¹, Tomohiko Nagata¹, 〇Hiroaki Yamazaki¹, Naofumi Nakamura¹ (1. Corporate Research & Development Center, Toshiba Corporation(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 2:45 PM - 3:00 PM |PDF Download

[C-9-04] Air Gap Control Method and Sensitivity Improvement in Capacitive MEMS Hydrogen
Sensors

〇Naoki Hiramatsu¹, Yosuke Akimoto¹, Yumi Hayashi¹, Kei Masunishi¹, Tomohiro Saito¹, Naofumi Nakamura¹, Hiroaki Yamazaki¹ (1. Toshiba Corporation.(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 3:00 PM - 3:15 PM |PDF Download

[C-9-05] Fabrication of Hollow Structure in Embedded Die Substrate for Heterogeneous Integration

〇Masamitsu Matsuura¹, Tanemasa Asano¹, Haruichi Kanaya¹ (1. Kyushu Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 3:15 PM - 3:30 PM |PDF Download

[D-1-01] 1.2 A/mm Drain Current Density and 1.1 Ω mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped Diamond

〇Yukiko Suzuki¹, Shoichiro Imanishi¹, Ken Kudara¹, Kiyotaka Horikawa¹, Shotaro Amano¹, Masayuki Iwataki¹, Aoi Morishita¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1. School of Fundamental Science & Engineering Waseda Univ.(Japan), 2. Kagami Memorial Research Inst. for Materials Science and Technology(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 2:00 PM - 2:15 PM |PDF Download

[D-1-02] The Si-terminated 2DHG Diamond MOSFETs with Normally-off Operation and Wide temperature Stability (~673 K)

〇Yuta Nameki¹, Bi Te¹, Wenxi Fei¹, Jun Tsunoda¹, Naoya Nikura¹, Atsushi Hiraiwa^3,1, Hiroshi Kawarada^1,2 (1. Waseda Univ.(Japan), 2. The Kagami Memorial Laboratry for Material Science and Tech.(Japan), 3. Nagoya Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 2:15 PM - 2:30 PM |PDF Download

[D-1-03] Vertical-type 2DHG Diamond MOSFET; Achieve High Current Operation of -3.4 A by Expanding Gate Width

〇Naoya - Niikura¹, Jun Tsunoda¹, Masayuki Iwataki¹, Kiyotaka Horikawa¹, Syotaro Amano¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1. Waseda Univ.(Japan), 2. KMLMST(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 2:30 PM - 2:45 PM |PDF Download

[D-1-04] Aperture-Limited Conduction from Acceptor Diffusion in Current Aperture Vertical β-Ga₂O₃ MOSFETs

〇Man Hoi Wong^1,2, Hisashi Murakami³, Yoshinao Kumagai³, Masataka Higashiwaki¹ (1. NICT(Japan), 2. Univ. Massachusetts Lowell(United States of America), 3. Tokyo Univ. Agricul. Tech.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 2:45 PM - 3:00 PM |PDF Download

[D-1-05] Novel Si stacking on beta-Ga₂O₃MOSFET structure enabling 0.59 mOhmcm² of Ron,sp at 600V bloking voltage

〇Takashi Miida¹, Ikuo Kurachi², Kazuo Tanimoto¹, Kazuhiro Kawasiri¹ (1. EASTWIND, LLC.(Japan), 2. D&S, Inc.(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 3:00 PM - 3:15 PM |PDF Download

[D-1-06 (Late News)] Diamond Schottky Barrier Diodes Fabricated on Heteroepitaxial Substrates

〇Phongsaphak Sittimart^1,2, Shinya Ohmagari², Tsuyoshi Yoshitake¹ (1. Kyushu Univ.(Japan), 2. AIST(Japan))

2020 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2020 3:15 PM - 3:30 PM |PDF Download

[D-10-01 (Invited)] The impact of buffer design on GaN HEMTs

〇Michael J. Uren¹, Martin Kuball¹ (1. University of Bristol(UK))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 4:00 PM - 4:30 PM |PDF Download