2020 International Conference on Solid State Devices and Materials

Sep 27, 2020 - Sep 30, 2020

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415 results (291 - 300)

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[H-7-05] High-frequency short-pulse generation with a highly stacked InAs quantum dot mode-locked laser diode

〇Kouichi Akahane¹, Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹ (1. NICT(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 10:00 AM - 10:15 AM |PDF Download

[H-7-06] Modeling of Graphene Sensor Functionalized with Pt Nanoparticles by Molecular Dynamics and Grand Canonical Monte Carlo Simulations with Reactive Force Field

〇Takahisa Tanaka¹, Takeaki Yajima¹, Ken Uchida¹ (1. Univ. of Tokyo(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 10:15 AM - 10:30 AM |PDF Download

[H-8-01 (Invited)] 2D Materials for Next-Generation Computing Technologies

〇Peng Zhou¹ (1. Fudan University(China))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 11:00 AM - 11:30 AM |PDF Download

[H-8-02] Fabrication of p-doped quantum dot spin-polarized light-emitting diodes

〇Kouhei Etou¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1. Hokkaido Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 11:30 AM - 11:45 AM |PDF Download

[H-8-03] Active Reset of an Entangled-LED for Superequilibrium Entangled Photon Generation

〇Jonathan R. A. Mueller^1,2, R. Mark Stevenson¹, Joanna Skiba-Szymanska¹, Ginny Shooter^1,3, Jan Huwer¹, Ian Farrer^2,3, David A. Ritchie³, Andrew J. Shields¹ (1. Toshiba Europe Ltd.(UK), 2. Univ. of Sheffield(UK), 3. Univ. of Cambridge(UK))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 11:45 AM - 12:00 PM |PDF Download

[H-8-04] Transparent Schottky type solar cell based on uniform WS₂ film

〇Xing He¹, Toshiro Kaneko¹, Toshiaki Kato^1,2 (1. Tohoku University(Japan), 2. JST-PRESTO(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 12:00 PM - 12:15 PM |PDF Download

[H-9-01] The demonstration of SS below 60 mV/dec at RT in all 2D heterostructure TFET

K. Nakamura¹, N. Nagamura², K. Ueno³, T. Taniguchi², K. Watanabe², 〇Kosuke Nagashio¹ (1. The University of Tokyo(Japan), 2. National Institute for Materials Science(Japan), 3. Saitama University(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 2:00 PM - 2:15 PM |PDF Download

[H-9-02] ZrS₂ Ambipolar FETs with Schottky-Barrier Contact to Near-Midgap TiN Film Controlled by Top-Gate TiN/Al₂O₃ Stacks

〇Masaya Hamada¹, Kentaro Matsuura¹, Takuya Hamada¹, Iriya Muneta¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1. Tokyo Tech.(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 2:15 PM - 2:30 PM |PDF Download

[H-9-03] ALD-ZrO₂Gate Dielectric with Suppressed Interfacial Oxidation for High Performance MoS₂ Top Gate MOSFETs

〇WENHSIN CHANG¹, Naoya Okada¹, Masayo Horikawa¹, Takahiko Endo², Yasumitsu Miyata², Toshifumi Irisawa¹ (1. Natl. Inst. Adv. Indus. Sci. Tech.(Japan), 2. Tokyo Metropolitan Univ.(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 2:30 PM - 2:45 PM |PDF Download

[H-9-04] Understanding the Tunneling Behavior in 2D Based Floating Gate Type Memory Device by Measuring Floating Gate Voltage

〇Taro Sasaki¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1. Univ. of Tokyo(Japan), 2. Saitama Univ.(Japan), 3. NIMS(Japan))

2020 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2020 2:45 PM - 3:00 PM |PDF Download

415 results (291 - 300)

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