[H-2-06] Low Temperature Operation of 2DHG Diamond FETs with Superconducting Diamond Sources and Drains aiming at JoFET or SCFET operation

〇Chiyuki Wakabayashi¹, Yasuhiro Takahashi¹, Taisuke Kageura², Yoshihiko Takano³, Minoru Tachiki³, Shuuichi Ooi³, Shunichi Arisawa³, Hiroshi Kawarada^1,4 (1. Waseda Univ. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 3. MANA National Inst. for Materials Science (Japan), 4. The Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 3:30 PM - 3:45 PM |PDF Download

[H-3-01] Revealing the role of oxygen on defect formation of MoS₂ by combining thermal desorption spectroscopy and atomic layer deposition

〇Shuhong Li¹, Tomonori Nishimura¹, Mina Maruyama², Susumu Okada², Kosuke Nagashio¹ (1. Univ. of Tokyo (Japan), 2. Univ. of Tsukuba (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 4:15 PM - 4:30 PM |PDF Download

[H-3-02] Experimental Study on Suspended Trapezoid Graphene for Thermal Rectification

〇Fayong Liu¹, Jiayu Guo¹, Yoshiki Ozono¹, Shinichi Ogawa², Yukinori Morita², Manoharan Muruganathan¹, Hiroshi Mizuta¹ (1. Japan Advanced Institute of Science and Technology (Japan), 2. National Institute of Advanced Industrial Science and Technology (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 4:30 PM - 4:45 PM |PDF Download

[H-3-03] Thickness-Dependent Magnetic Domain Structures in CoFe/MgO Nanolayer Patterns on GaAs (001) Substrates

〇Li Zi¹, Wei Dai¹, Masashi Akabori², Shinjiro Hara¹ (1. Hokkaido Univ. (Japan), 2. Japan Advanced Inst. of Sci. and Tech. (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 4:45 PM - 5:00 PM |PDF Download

[H-3-04] Light-emitting layered architectures tunable with chiral light and magnetic field

Haider Golam¹, Vaibhav Varade², Shankar Khanal², Arthur Slobodeniuk², Tomas Novotny², Martin Zacek², Martin Kalbac¹, 〇Jana Kalbacova Vejpravova² (1. J. Heyrovsky Institute of Physical Chemistry, CAS (Czech Republic), 2. Charles University, Faculty of Mathematics and Physics (Czech Republic))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 5:00 PM - 5:15 PM |PDF Download

[H-3-05 (Late News)] Electronic and Magnetic Properties of CoSb₃, Cr-doped CoSb₃, and Related Compound Thin Films

〇Kazuaki Kobayashi¹, Hirokazu Takaki², Masato Shimono¹, Hiroyuki Ishii², Nobuhiko Kobayashi², Kenji Hirose³, Takao Mori¹ (1. Nat. Inst. Mater. Sci. (Japan), 2. Univ. of Tsukuba (Japan), 3. NEC Corp. (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 5:15 PM - 5:30 PM |PDF Download

[H-3-06 (Invited)] Post-growth Tailoring of Nanowires’ Bandgap: Towards Tunable Single Photon Sources and Quantum Rings

〇Marta De Luca¹ (1. Sapienza Univ. of Rome (Italy))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 5:30 PM - 6:00 PM |PDF Download

[H-4-01] Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers

〇Jiang Pu¹, Naoki Wada², Yuhei Takaguchi², Wenjin Zhang³, Zheng Liu⁴, Takahiko Endo², Toshifumi Irisawa⁴, Kazunari Matsuda³, Yuhei Miyauchi³, Yasumitsu Miyata², Taishi Takenobu¹ (1. Nagoya Univ. (Japan), 2. Tokyo Metropolitan Univ. (Japan), 3. Kyoto Univ. (Japan), 4. AIST (Japan))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 9:00 AM - 9:15 AM |PDF Download

[H-4-02] In-plane Gate Graphene Transistor with Epitaxially Grown Molybdenum Disulfide Passivation Layers

〇Po-Cheng Tsai¹, Chun-Wei Huang², Che-Jia Chang², Shu-Wei Chang², Shih-Yen Lin² (1. Univ. of Taiwan (Taiwan), 2. Res. of Applied Sciences (Taiwan))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 9:15 AM - 9:30 AM |PDF Download

[H-4-03] Work function modulation of Au/Bi bilayer system toward p-type WSe₂ FET

〇Ryuichi Nakajima¹, Tomonori Nishimura¹, Keiji Ueno², Kosuke Nagashio¹ (1. The Univ. of Tokyo (Japan), 2. Saitama Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2022 9:30 AM - 9:45 AM |PDF Download