[G-2-02] An Atomistic Study of Thermal Conductance in Novel GeC Channel Materials

〇Shao Chen Lee¹, Yu Ting Chen¹, Cheng Rui Liu¹, Sheng Min Wang¹, Ying Tsan Tang¹ (1. National Central University (Taiwan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 2:30 PM - 2:45 PM |PDF Download

[G-2-03] Large Radiation Damages to Si MOS Devices Induced by Intermediate Energy Region X-ray Irradiation

〇Naohiro Matsukawa¹, Koichiro Inoue¹, Takao Sueyama¹ (1. KIOXIA Corp. (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 2:45 PM - 3:00 PM |PDF Download

[G-2-04] Resistance Modeling of Short-range Connections: Impact of Current Spreading

〇Davide Tierno¹, Victor Vega-Gonzalez¹, Simone Esposto¹, Ivan Ciofi¹ (1. imec (Belgium))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 3:00 PM - 3:15 PM |PDF Download

[G-2-05] [No Show] Drain Current Variability Assessment in 2-levels Stacked Nanowire Gate All Around Field Effect Transistors

〇Donghyun Kim^1,2, Sylvain Barraud³, Jae Woo Lee², Gerard Ghibaudo¹, Christoforos Theodorou¹ (1. Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, Grenoble INP, CNRS, IMEP-LAHC (France), 2. Electronics and info. engineering, Korea Univ. (Korea), 3. Univ. Grenoble Alpes, CEA, LETI (France))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 3:15 PM - 3:30 PM |PDF Download

[G-2-06] Ab initio investigation of Ga doping in Si_1-xGe_x: effect of biaxial strain and interaction of dopants with point-defects

〇Gianluca Rengo^1,2,3, Geoffrey Pourtois^2,4, Clement Porret², Roger Loo², André Vantomme¹ (1. QSP, KU Leuven (Belgium), 2. imec (Belgium), 3. Research Foundation - Flanders (FWO) (Belgium), 4. Plasmant, University of Antwerp (Belgium))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 3:30 PM - 3:45 PM |PDF Download

[G-2-07 (Late News)] Temperature Effects on Static Characteristics of Complementary Field-Effect Transistors with Si and Ge Nanosheets

〇Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Wen Hsin Chang¹ (1. AIST (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 3:45 PM - 4:00 PM |PDF Download

[G-3-01 (Invited)] Quantum Computation - Spins Inside

〇Lieven Vandersypen¹ (1. Delft Univ. of Tech. (Netherlands))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 4:15 PM - 4:45 PM |PDF Download

[G-3-02] Introduction of deep impurity levels of S and Zn and high temperature single-electron transport in Si tunnel FETs

〇Yoshisuke Ban¹, Kimihiko Kato², Shota Iizuka², Shigenori Murakami², Koji Ishibashi¹, Satoshi Moriyama³, Takahiro Mori², Keiji Ono¹ (1. RIKEN (Japan), 2. AIST (Japan), 3. Tokyo Denki Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 4:45 PM - 5:00 PM |PDF Download

[G-3-03] Device Structure and Fabrication Process for MOS Type Silicon Spin Qubit Realizing Process-Variation-Robust two-Qubit SWAP Gate

〇Hidehiro Asai¹, Shota Iizuka¹, Tohru Mogami¹, Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Kimihiko Kato¹, Hiroshi Oka¹, Takahiro Mori¹ (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 5:00 PM - 5:15 PM |PDF Download

[G-3-04] Long-term Characteristic Stabilization of a Semiconductor Double Quantum Dot Based on a Multi-dimensional Gradient Descent Technique

〇Chutian WEN¹, Hiroki Takahashi¹, Sayyid Irsyadul Ibad¹, Shimpei Nishiyama^1,2, Kimihiko Kato², Yongxun Liu², Shigenori Murakami², Takahiro Mori², Raisei Mizokuchi¹, Jun Yoneda¹, Tetsuo Kodera¹ (1. Tokyo Inst. of Tech. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

2022 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2022 5:15 PM - 5:30 PM |PDF Download