[J-6-05] Analysis of leakage current mechanisms in NO-nitrided SiC(1-100) MOS devices

〇Asato Suzuki¹, Takato Nakanuma¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Akitaka Yoshigoe³, Takayoshi Shimura¹, Heiji Watanabe¹ (1. Osaka Univ. (Japan), 2. AIST (Japan), 3. JAEA (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 14:30 〜 14:45 |PDF ダウンロード

[J-6-06] 4H-SiC surface nitridation kinetic model in high temperature N₂ (+O₂) annealing focusing on the effects of annealing temperature and O₂ partial pressure

〇Tianlin Yang¹, Koji Kita^1,2 (1. Department of Materials Engineering, School of Engineering, Univ. of Tokyo (Japan), 2. Department of Advanced Materials Science, Graduate School of Frontier Sciences, Univ. of Tokyo (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 14:45 〜 15:00 |PDF ダウンロード

[J-6-07] First-principles study on electronic structure at step edge of SiC/SiO₂ interface

〇Kazuma Yokota¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1. Kobe Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 15:00 〜 15:15 |PDF ダウンロード

[J-6-08 (Late News)] Improvement of SiO₂/4H-SiC MOS Interface Characteristics via a Concentration-Tunable Boron Incorporation Process

〇Runze Wang¹, Munetaka Noguchi², Hiroshi Watanabe², Koji Kita¹ (1. The Univ. of Tokyo (Japan), 2. Mitsubishi Electric Corp. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 15:15 〜 15:30 |PDF ダウンロード

[J-6-09 (Late News)] Theoretical Study of the Influence of GaO_x Layer on the SiO₂/GaN Interface

〇Shuto Hattori¹, Atsushi Oshiyama², Seiichi Miyazaki¹, Heiji Watanabe³, Katsunori Ueno⁴, Ryo Tanaka⁴, Tsurugi Kondo⁴, Shinya Takashima⁴, Masaharu Edo⁴, Kenji Shiraishi^2,1 (1. Graduate School of Eng., Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan), 3. Graduate School of Eng., Osaka Univ. (Japan), 4. Fuji Electric Co., Ltd. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 15:30 〜 15:45 |PDF ダウンロード

[J-8-01 (Invited)] Progress of Low-Voltage Si-Power MOSFETs

〇Wataru Saito¹ (1. Kyushu Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 10:45 〜 11:15 |PDF ダウンロード

[J-8-02] Poly Back Seal Effect on Platinum Solid Phase Diffusion in High Speed Switching Diodes

〇Yuhki Fujino¹, Shotaro Baba¹, Hiroaki Kato¹, Shingo Sato¹, Katsura Miyashita¹ (1. Toshiba Electric Devices & Storage Corp. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 11:15 〜 11:30 |PDF ダウンロード

[J-8-03] Experimental Demonstration of the Surge Current Capability of Embedded SBDs in 1.2-kV SiC SBD-integrated Trench MOSFETs with Ti and Ni as Schottky Metals

〇Yudai Kitamura¹, Takeshi Tawara², Shinsuke Harada², Hiroshi Yano¹, Noriyuki Iwamuro¹ (1. Univ. of Tsukuba (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 11:30 〜 11:45 |PDF ダウンロード

[J-8-04] Experimental and Numerical Investigations of the Electrical Characteristics of SiC SBD-Integrated MOSFETs by Varying the Area Occupied by Embedded SBDs

〇Keisuke Kashiwa¹, Mitsuki Takahashi¹, Hiroshi Yano¹, Noriyuki Iwamuro¹ (1. Univ. of Tsukuba (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 11:45 〜 12:00 |PDF ダウンロード

[J-9-01 (Invited)] Non-destructive Breakdown in GaN/SiC-based Hybrid HEMT

〇Akira Nakajima¹, Hirohisa Hirai¹, Yoshinao Miura¹, Shinsuke Harada¹ (1. AIST (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 13:30 〜 14:00 |PDF ダウンロード