[C-1-5] Electron Wave Interference in the Terminal Region of Split-Gated Quantum Wire

Y. Ochiai, K. Yamamoto, T. Onishi, M. Kawabe, K. Ishibashi, J. P. Bird, Y. Aoyagi, T. Sugano, D. K. Ferry (1.Department of Materials Science, Chiba University, 2.Institute of Materials Science, University of Tsukuba, 3.Institute of Physical and Chemical Research, 4.Department of Electrical Engineering, Arizona State University)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-2-1] Present Status and Future Prospects of Quantum Structure Materials and Devices

Hiroyuki SAKAKI (1.RCAST, University of Tokyo, 2.Quantum Transition Project, JRDC)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-2-2] Characterization of Ballistic Transport in a Resonant-Tunneling Hot-Electron Transistor Using Pulsed High Magnetic Fields up to 42 T

T. Strutz, T. Takamasu, N. Miura, K. Imamura, L. Eaves (1.Institute for Solid State Physics, The University of Tokyo, 2.Fujitsu Limited, 3.Department of Physics, University of Nottingham)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-2-3] Hot Electron Ballistic Transport in n-AlGaAs/InGaAs/GaAs Small Four-Terminal Structures

Satoshi SASAKI, Yoshiro HIRAYAMA, Seigo TARUCHA (1.NTT Basic Research Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Analysis of the Switching Time of MOBILEs (Monostable-Bistable Transition Logic Elements) Based on Simple Model Calculation

Koichi MAEZAWA (1.NTT LSI Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-2-5] Open-Base Multi-Emitter HBTs with Increased Logic Functions

K. Imamura, M. Takatsu, T. Mori, S. Muto, N. Yokoyama (1.Fujitsu Laboratories Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-3-1] Improvement of Poly-Si TFT Characteristics by Hydrogenation at SiO2/Poly-Si Interfaces, Characterized by TDS Measurement of Deuterium Terminated Poly-Si

K. Hamada, S. Saito, K. Sera, F. Okumura, F. Uesugi, I. Nishiyama (1.ULSI Device Development Labs., Functional Device Res. Labs., Microelectronics Res. Labs. NEC Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] Transport Properties in High Mobility Poly-Si TFTs

Tadashi Serikawa, Seiiti Shirai, Kazuo Nakagawa, Sadao Takaoka, Kenichi Oto, Kazuo Murase, Shuichi Ishida (1.NTT Interdisciplinary Research Labs., 2.Faculty of Science, Osaka University, 3.Science University of Tokyo, Yamaguchi College)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogenation

D. P. Gosain, J. Westwater, S. Usui (1.Sony Corporation Research Center)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-3-4] Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors

Mitsutoshi MIYASAKA, Tadakazu KOMATSU, Akemi SHIMODAIRA, Ichio YUDASAKA, Hiroyuki OHSHIMA (1.SEIKO EPSON CORPORATION Active Device Research Laboratory / Analysis Center)

1994 International Conference on Solid State Devices and Materials |PDF Download