[D-6-4] Nickel Stanogermanide Ohmic Contact on N-type Germanium-Tin (Ge1-xSnx) using Se and S Implant and Segregation

Y. Tong¹, S. Su², B. Liu¹, L. Wang¹, P. S. Y. Lim¹, Y. Yang¹, W. Wang¹, K. L. Low¹, G. Zhang², C. Xue², B. Cheng², G. Han¹, Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore, 2.State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Academy of Sci. , P. R. China)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-7-1] CMOS Contact Resistance Reduction through Aluminum Profile Engineering

S. M. Koh¹, Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-7-2] W vs. Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22nm Tech. Nodes

A. Veloso¹, S. A. Chew¹, T. Schram¹, H. Dekkers¹, A. Van Ammel¹, T. Witters¹, H. Tielens¹, N. Heylen¹, K. Devriendt¹, F. Sebaai¹, S. Brus¹, L. A. Ragnarsson¹, L. Pantisano¹, G. Eneman¹, L. Carbonell¹, O. Richard¹, 1P. Favia¹, 1J. Geypen¹, 1H. Bender¹, 1Y. Higuchi², 2A. Phatak³, 3A. Thean¹, 1N. Horiguchi¹ (1.IMEC , Belgium, 2.Panasonic , Japan, 3.Applied Materials Belgium NV , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-7-3] Low-barrier Hetero Junction to N-type Silicon Using Novel Ultrathin Epitaxial Silicide Consisting of Tungsten-encapsulating Silicon Clusters

N. Okada^1,2, N. Uchida², T. Kanayama^1,2 (1.Univ. of Tsukuba, 2.AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-7-4] Quantitative Evaluation of Dopant Concentration in Shallow Silicon pn Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy

L. Bolotov^1,2, K. Fukuda², H. Arimoto², T. Tada², T. Kanayama² (1.Univ. of Tsukuba, 2.Nat. Inst. of Advanced Indus. Sci. and Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-8-1] Measurements of Anisotropic Biaxial Stresses in x = 0.15 and 0.30 Si1-xGex Nanostructures by Oil-Immersion Raman Spectroscopy

D. Kosemura¹, M. Tomita¹, K. Usuda², T. Tezuka², A. Ogura¹ (1.Meiji Univ., 2.Green Nanoelectronics Collaborative Research Center, AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-8-2] Role of Ar on Structual Phase Transformation of Sputtered HfO2

T. Iwai¹, Y. Nakajima¹, T. Nishimura¹, K. Nagashio¹, A. Toriumi¹ (1.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-8-3] Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-shaped SiGe Layer on Si Substrate by EBSP

M. Tomita^1,2, M. Nagasaka¹, D. Kosemura¹, K. Usuda³, T. Tezuka³, A. Ogura¹ (1.Meiji Univ., 2.Research Fellow of the Japan Society for the Promotion of Sci., 3.Green Nanoelectronics Collaborative Research Center, AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-8-4] Analysis of micro-Raman spectra combined with FDTD electromagnetic simulation and FEM stress simulation for local stress distribution in Si MOSFETs

T. Tada¹, A. Satoh¹, H. Arimoto¹, K. Fukuda¹, K. Fujita², T. Kanayama¹ (1.AIST, 2.ASTOM R&D , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-1-1] High-Performance Tri-Gate Silicon Nanowire Transistors for Ultra-Low Power LSI

M. Saitoh¹, C. Tanaka¹, K. Ota¹, K. Uchida¹, T. Numata¹ (1.Tokyo Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download