10) ferroelectric tunnel junctions (FTJs) with ultrathin Y-doped HfO₂

^○X. Tian¹, S. Shibayama¹, T. Nishimura¹, T. Yajima¹, S. Migita², A. Toriumi¹ (1.Univ. of Tokyo (Japan), 2.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:30 〜 14:45 |PDF ダウンロード

[C-5-05] On the Physical Origin of Steep Subthreshold Slope in Ferroelectric FET: Transient Negative Capacitance Effect Caused by Polarization Switching Delay

^○C. Jin¹, T. Hiramoto¹, M. Kobayashi¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:45 〜 15:00 |PDF ダウンロード

[C-6-01 (Invited)] Investigation of Ferroelectric Switching Mechanism and Improvement of Switching Speed in Si doped HfO₂ for FeRAM Application

^○H.K. Yoo¹, J.S. Kim¹, Z. Zhu², M.R. MacDonald³, X. Lei³, T.Y. Lee⁴, D. Lee^4,5, S. Lee¹, A. Yoon², S.C. Chae⁴, J. Park^4,5, D. Hemker², J.G. Langan³, Y. Nishi⁶, J.K. Kim¹ (1.SK Hynix Inc. (Korea), 2.Lam Res. Corp. (USA), 3.Versum Materials Inc. (USA), 4.Seoul National Univ. (Korea), 5.CNR, Inst. for Basic Sci. (Korea), 6.Stanford Univ. (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 15:15 〜 15:45 |PDF ダウンロード

[C-6-02] Evaluation of Ferroelectricity in Si-implanted HfO₂ along Cycling

T. Francois¹,^○J. Coignus¹, L. Grenouillet¹, M. Barlas¹, B. Bessif¹, N. Vaxelaire¹, H. Boutry¹, M. Coig¹, E. Vilain¹, N. Rambal¹, Y. Morand¹, J.M. Pedini¹, F. Mazen¹, E. Nowak¹, F. Gaillard¹ (1.Univ. Grenoble Alpes, CEA, LETI (France))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 15:45 〜 16:00 |PDF ダウンロード

[C-6-03] Performance improvement by template-induced crystallization in ferroelectric HfO₂ tunnel junction memory for cross-point high-density application

^○S. Kabuyanagi¹, S. Fujii¹, K. Usuda¹, M. Yamaguchi¹, T. Ino¹, Y. Nakasaki¹, R. Takaishi¹, Y. Kamimuta¹, M. Saitoh¹ (1.Toshiba Memory Corporation (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:00 〜 16:15 |PDF ダウンロード

[C-6-04] Investigation of Switching Characteristics for Silicon Doped Hafnium Oxide FeFET

^○T. Ali¹, P. Polakowski¹, S. Riedel¹, T. Büttner¹, T. Kämpfe¹, M. Rudolph¹, B. Pätzold¹, D. Löhr¹, R. Hoffmann¹, M. Czernohorsky¹, K. Kühnel¹, P. Steinke¹, K. Zimmermann¹, K. Biedermann¹, K. Seidel¹, J. Müller¹ (1.Fraunhofer Center Nanoelectronic Technologies (Germany))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:15 〜 16:30 |PDF ダウンロード

[C-7-01] Deep Experimental Analysis of Negative Capacitance in HfZrO_x-Based Field-Effect Transistors

^○J. Li¹, J. Zhou^1,2, G. Han¹, Y. Liu¹, Y. Hao¹ (1.Xidian University (China), 2.University of California at Berkeley (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 09:00 〜 09:15 |PDF ダウンロード

[C-7-02] First Demonstration of Ferroelectric Lanthanum-Doped Hafnium Oxide for InGaAs Negative Capacitance MOSFET with Sub-60 mV/dec Subthreshold Swing

Q.H. Luc¹,^○K.Y. Zhang¹, C.C. Fan Chiang¹, Y.D. Jin¹, H.B. Do¹, M.T.H. Ha¹, S.H. Huynh¹, P. Huang¹, C.W. Hsu¹, S.P. Wang¹, Y.C. Lin¹, Y.E. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 09:15 〜 09:30 |PDF ダウンロード

[C-7-03] Impact of Top-ZrO₂ Nucleation Layer on Ferroelectricity of Hf_xZr_1−xO₂ Thin Films for Ferroelectric Field Effect Transistor Application

^○T. Onaya^1,2,3, T. Nabatame², N. Sawamoto¹, A. Ohi², N. Ikeda², T. Nagata², A. Ogura¹ (1.Meiji Univ. (Japan), 2.NIMS (Japan), 3.JSPS Research Fellow (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 09:30 〜 09:45 |PDF ダウンロード

[C-7-04] Effect of internal-strain caused by monoclinic phase formation on ferroelectric phase formation of ZrO₂

^○S. Shibayama¹, T. Nishimura¹, X. Tian¹, S. Migita², A. Toriumi¹ (1.Univ. of Tokyo (Japan), 2.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 09:45 〜 10:00 |PDF ダウンロード