The Japan Society of Applied Physics

2018 International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

2018年9月9日 〜 2018年9月13日
University of Tokyo

922件中(91 - 100)

[C-3-05] Ge:B and GeSn:B Low Temperature Selective Epitaxial Growth Schemes for Source/Drain layers in Ge pMOS devices

A. Vohra1,2, C. Porret2, D. Kohen3, S. Folkersma1,2, J. Bogdanowicz2, M. Schaekers2, J. Tolle3, A. Hikavyy2, E. Capogreco2, L. Witters2, R. Langer2, W. Vandervorst1,2,○R. Loo2 (1.K.U. Leuven (Belgium), 2.Imec (Belgium), 3.ASM (United States Minor Outlying Islands))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 10:15 〜 10:30 |PDF ダウンロード

[C-4-01] Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles

K.-T. Chen1, C.-Y. Liao1, R.-C. Hong1, S.-S. Gu1, Y.-C. Chou1, Z.-Y. Wang1, S.-Y. Chen1, G.-Y. Siang1, H.-Y. Chen1, C. Lo1, P.-G. Chen3, Y.-J. Lee1, M.-H. Liao2, K.-S. Li3, S.T. Chang4,○M.-H. Lee1 (1.National Taiwan Normal Univ. (Taiwan), 2.National Taiwan Univ. (Taiwan), 3.National Nano Device Lab. (Taiwan), 4.National Chung Hsing Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 10:45 〜 11:00 |PDF ダウンロード

[C-4-05 (Late News)] A Novel Experimental Approach to Extracting Negative Capacitances: Newly found Negative DIBL Effect in 14nm NC-FinFET and the Way to Achieve Hysteresis-free

Y.C. Luo1,○E.R. Hsieh2, C.J. Su3, S. Chung2, T.P. Chen4, S.A. Huang4, T.J. Chen4, O. Cheng4 (1.National Tsing Hua University (Taiwan), 2.National Chiao Tung University (Taiwan), 3.National NanoDevice Lab. (Taiwan), 4.UMC (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:45 〜 12:00 |PDF ダウンロード

922件中(91 - 100)