[PS-4-12] Diamond Schottky barrier diodes on half-inch single-crystal wafers fabricated by Minimal Fab System
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
779件中(381 - 390)
[PS-4-13] Characterization of defects in diamond PiN diodes by electron beam induced current
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-14] Theoretical approach to oxygen incorporation mechanism in vicinal m-GaN MOVPE
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-15] Positive Shifting of Threshold Voltage of Nano-Channel (NC) AlGaN/GaN HEMTs with Post Gate Annealing (PGA) Modulation
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-16] Effects of Deep Level States Generated by Mg-Ion Implantation on Electrical Properties of GaN MOS Diodes before Activation Annealing
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-17] Impacts of nitrogen plasma surface cleaning on threshold voltages of AlTiO/AlGaN/GaN MIS devices
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-18] High Frequency AlGaN/GaN T-gate HEMTs on Extreme Low Resistivity Silicon Substrates
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-19] A Method for Accurate Extracting the Properties of Border Traps in Lateral GaN Power MOSFET with a Compact Distributed Network Model
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-20] Analysis of Inversion Channel Mobility in a GaN-based MOSFET
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-21] Estimation of post-deposition annealing effects on electrical properties of ALD-SiO2/AlGaN/GaN MIS-HEMTs
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)