Oral presentation

[19a-C10-1~9] 13.4 Interconnection technology

Thu. Sep 19, 2013 9:30 AM - 12:00 PM C10 (TC3 2F-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[19a-C10-1] Low-k Mesoporous Pure Silica Zeolite Synthesis with Centrifugation Process of Zeolite Precursor

^○Tadashi Sato¹, Shin-Ichiro Kuroki¹, Yasuhisa Kayaba², Takamaro Kikkawa¹ (RNBS, Hiroshima Univ.¹, Mitsui Chemicals, Inc.²)

9:45 AM - 10:00 AM

[19a-C10-2] The acceleration mechanism and the observation of RF bias enhanced neutral beam

^○Yasuaki Sakakibara², Yoshiyuki Kikuchi^1,2, Seiji Samukawa¹ (Tohoku Univ.¹, Tokyo Electron²)

10:00 AM - 10:15 AM

[19a-C10-3] Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation

^○Jinhan Song¹, Kazuki Matsumoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

10:15 AM - 10:30 AM

[19a-C10-4] Investigation on Crystal Orientation Dependence of Corrosion of Copper Wire by Atomic Force Microscopy

^○Shoichiro Ogata¹, Naritaka Kobayashi¹, Chikako Takatoh², Shohei Shima², Akira Fukunaga², Hitoshi Asakawa³, Takeshi Fukuma^1,3,4 (Grad. school, Kanazawa Univ.¹, Ebara Corp.², Bio-AFM FRC., Kanazawa Univ.³, ACT-C/JST⁴)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[19a-C10-5] Formation of Cu film on Ru surface using electroless neutral Cu plating

^○Osamu Sugiura¹ (Chiba Inst. of Tech.¹)

11:00 AM - 11:15 AM

[19a-C10-6] Periodic Strain Undulation around Through Si Vias in Wafer-On-Wafer Structures

^○Noriyuki Taoka¹, Osamu Nakatsuka¹, Yoriko Mizushima^2,3, Hideki Kitada^2,3, Young Suk Kim^3,4, Tomoji Nakamura², Takayuki Ohba^3,4, Shigeaki Zaima¹ (Nagoya Univ.¹, Fujitsu Laboratories Ltd.², Tokyo Institute of Technology³, The Univ. of Tokyo⁴)

11:15 AM - 11:30 AM

[19a-C10-7] Electrical Characteristics of TSV Fabricated Using Via-last process

^○Kenichi Takeda^1,2, Mayu Aoki^1,2, Kazuyuki Hozawa^1,2, Toshio Mitsuhashi², Hidekazu Kikuchi², Azusa Yanagisawa² (Hitachi CRL¹, ASET²)

11:30 AM - 11:45 AM

△ [19a-C10-8] Evaluation of Self-Assembly and Electrostatic Temporary Bonding for Chip-to-Wafer 3D Integration

^○(D)Hideto Hashiguchi¹, Takafumi Fukushima², Jicheol Bea², Hisashi Kino¹, Kang-Wook Lee², Tetsu Tanaka^1,3, Mitsumasa Koyanagi² (Dept. of Bioengineering and Robotics, Tohoku Univ.¹, New Industry Creation Hatchery Center (NICHe), Tohoku Univ.², Dept. of Biomedical Engineering, Tohoku Univ.³)

11:45 AM - 12:00 PM

△ [19a-C10-9] Effect of Chip Thinning Process on DRAM Retention Time in 3D IC

^○(M2)Seiya Tanikawa¹, Hideki Naganuma¹, Takaharu Tani¹, Hisashi Kino¹, Jicheol Bea², Takafumi Fukushima², Kang-Wook Lee², Mitsumasa Koyanagi², Tetsu Tanaka^1,3 (Dept. of Bioengineering and Robotics, Tohoku Univ.¹, New Industry Creation Hatchery Center (NICHe),², Dept. of Biomedical Engineering, Tohoku Univ.³)

Sessions

13. Semiconductors A (Silicon) » 13.4 Interconnection technology