^○Abidov Amir¹, Bunyod Allabergenov¹, Oybek Tursunkulov¹, Xiao Feiyi¹, Jin Xing¹, Supab Choopun², Javier Garay³, Habuka Hitoshi⁴, Kim Sungjin¹ (Kumoh National Institute of Technology¹, Chiang Mai University², UC Davis³, Yokohama National University⁴)

Break 16:15〜16:30 （10:30 AM - 10:45 AM）

10:45 AM - 11:15 AM

▲ [19a-D6-6] 「Invited lecture of overseas researcher」(30min.)Thin Film Metallic Glasses: Unique Properties and Potential Applications

^○Jinn P. Chu¹ (NTUST¹)

11:15 AM - 11:30 AM

▲ [19a-D6-7] Electronic structure study of Li_xNi_1-xO epitaxial thin films

^○Rosantha Kumara¹, Anli Yang¹, Ryosuke Yamauchi², Munetaka Taguchi³, Satoshi Ishimaru¹, Akifumi Matsuda², Mamoru Yoshimoto² (NIMS/SPring-8¹, Tokyo Inst Tech.², RIKEN/SPring-8³)

11:30 AM - 11:45 AM

▲ [19a-D6-8] NIR perfect absorbers with thermochromic VO₂ layer

^○Kyoko Namura^1,2, Naoto Muroi¹, Shu-Yi Li³, Claes G. Granqvist³, Motofumi Suzuki¹ (Kyoto Univ.¹, J S P S Research Fellow², Uppsala Univ.³)

11:45 AM - 12:15 PM

▲ [19a-D6-9] [INVITED]Towards a higher-Tc superconductor

^○Jun Akimitsu¹ (Aogaku Univ.¹)

Oral presentation

[19p-D6-1~18] 6.4 New thin-film materials

Wed. Mar 19, 2014 1:45 PM - 6:30 PM D6 (D209)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:15〜13:45 （12:15 PM - 1:45 PM）

1:45 PM - 2:00 PM

▲ [19p-D6-1] In situ temperature measurement of oxide thin films at a nanosecond time scale during pulsed UV laser irradiation

^○Kentaro Shinoda¹, Tomohiko Nakajima¹, Tetsuo Tsuchiya¹ (AIST¹)

2:00 PM - 2:15 PM

▲ [19p-D6-2] Graphene and tungsten disulfide nanosheets prepared using liquid phase exfoliation

^○Filchito Renee Bagsican¹, Makoto Ohshiro¹, Kazuhisa Takayama¹, Iwao Kawayama¹, Hironaru Murakami¹, Andrew Winchester², Sujoy Kittu², Saikat Talapatra², Masayoshi Tonouchi¹ (Osaka Univ¹, SIU-C²)

2:15 PM - 2:30 PM

▼ [19p-D6-3] Improvement of Electrical Properties of InGaZnO Thin-Film Transistors by Fluorinated Silicon Nitride Passivation

^○（D）jingxin Jiang¹, Tatsuya Toda¹, Mamoru Furuta¹ (Kochi Univ. of Tech.¹)

2:30 PM - 2:45 PM

▼ [19p-D6-4] Extension of endurance of superhydrophilicity in Cassie-Baxter law by epitaxial growth of SiO2 overlayers on a rutile TiO2(110) surface

^○Tu Le¹, Akira Sasahara¹, Masahiko Tomitori¹ (JAIST¹)

2:45 PM - 3:00 PM

▼ [19p-D6-5] The electrical properties of binary Fe-O films deposited under various oxygen flow rate

^○Yukiko Ogawa¹, Yuji Sutou¹, Daisuke Ando¹, Junichi Koike¹ (Tohoku Univ.¹)

3:00 PM - 3:15 PM

△ [19p-D6-6] Yttrium Oxide Epitaxial Thin Films Grown Under Reductive Condition

^○Kenichi Kaminaga¹, Ryosuke Sei¹, Tomoteru Fukumura^1,2, Tetsuya Hasegawa^1,2 (Univ. Tokyo¹, JST-CREST²)

3:15 PM - 3:30 PM

△ [19p-D6-7] Fabrication and Analysis of Crystal Structure of ABO₃(A=Ca,Sr,La B=Mn,Fe) Thin Films Using High-Density Target by Pulsed Laser Deposition Method

^○Keisuke Oshima¹, Yuta Watabe¹, Takahiro Oikawa¹, Takaaki Inaba¹, Nobuyuki Iwata¹, Hiroshi Yamamoto¹, Takuya Hashimoto² (CST Nihon Univ.¹, CHS Nihon Univ.²)

3:30 PM - 3:45 PM

△ [19p-D6-8] Effect of oxygen atmosphere on LaserMBE grown Co_xO_y phases and multilayered film

^○Akifumi Matsuda¹, Satoru Kaneko^2,1, Takanori Kiguchi³, Mamoru Yoshimoto¹ (Tokyo Inst. of Tech.¹, Kanagawa Ind. Tech. Cent.², Tohoku Univ.³)

3:45 PM - 4:00 PM

△ [19p-D6-9] Fabrication of high Indium ratio ZnInON by RF magnetron sputtering

^○Koichi Matsushima¹, Ryota Shimizu¹, Tomoaki Ide¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki^1,2 (Kyushu Univ.¹, JST-PRESTO²)

4:00 PM - 4:15 PM

△ [19p-D6-10] Fabrication of TiH₂ thin films by pulsed-laser deposition

^○Takayuki Suzuki¹, Kohei Yoshimatsu¹, Nobuo Tsuchimine², Takayoshi Ohshima¹, Akira Ohtomo^1,3,4 (Tokyo Institute of Technology¹, TOSHIMA Manufacturing Co.², MCES³, JST-ALCA⁴)

Break 16:15〜16:30 （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

[19p-D6-11] Electronic structure of p-SnS/n-Si heterojunction

^○Takeshi Inoue¹, Hidenori Hiramatsu^1,2, Hideo Hosono^1,2,3, Toshio Kamiya^1,2, Shigenori Ueda⁴, Naoki Ohashi^2,4 (MSL Tokyo Tech.¹, MCES Tokyo Tech.², FRC Tokyo Tech.³, NIMS⁴)

4:45 PM - 5:00 PM

[19p-D6-12] Bottom-up Synthesis of Non-close-packed Periodic Column Arrays

^○Shinta Suganuma¹, Yasuyuki Kaneko¹, Kyoko Namura¹, Kaoru Nakajima¹, Kenji Kimura¹, Motofumi Suzuki¹ (Kyoto Univ.¹)

5:00 PM - 5:15 PM

[19p-D6-13] Fabrication of Cubic-LaBaMnO3/ Hexagonal-ZnO Heterostructures and p-n Junction

^○（M1）Toshiki Mori¹, Akira Okada¹, Miyoshi Yokura¹, Katsuhiko Inaba², Shintaro Kobayashi², Nobuyuki Iwata³, Sanapa Reddy⁴, Tamio Endo¹ (Mie Univ.¹, Rigaku², Nihon Univ.³, S.V.D. College⁴)

5:15 PM - 5:30 PM

[19p-D6-14] Electronic Conductivity of Wide-gap Zn₃N₂ Thin Films

^○Naoomi Yamada¹, Koki Watarai¹, Xiang Cao¹, Takahiro Yamaguchi¹, Atsushi Sato¹, Yoshihiko Ninomiya¹ (Chubu Univ.¹)

5:30 PM - 5:45 PM

[19p-D6-15] Sputtering of Lanthanum Titanium Oxide for Optical Thin Films (2)

^○Ryota Nakano¹, Ryou Okuda¹, Hiroshi Murotani¹ (Tokai Univ.¹)

5:45 PM - 6:00 PM

[19p-D6-16] Effect of O₂ introduction Al doped CeO₂ thin films deposited by sputtering method (1)

^○Kenta Hara¹, Takuya Okazaki¹, Yuki Notani¹, Takashi Osawa¹, Keisuke Hibino¹, Setsu Suzuki², Keiji Ishibashi², Yasuhiro Yamamoto¹ (Hosei Univ.¹, Comet Inc.²)

6:00 PM - 6:15 PM

[19p-D6-17] Effect of O₂ introduction on Al doped CeO₂ thin films deposited by sputtering method (2)

^○Ｙｕｋｉ Notani¹, Takuya Okazaki¹, Kenta Hara¹, Takashi Osawa¹, Keisuke Hibino¹, Setsu Suzuki², Keiji Ishibashi², Yasuhiro Yamamoto¹ (Hosei Univ.¹, Comet Inc.²)

6:15 PM - 6:30 PM

[19p-D6-18] Crystal Growth and Structure Analysis of the Cr₂O₃ Thin Films on LiNbO₃ Substrates

^○Takumi Nakamura¹, Takuji Kuroda¹, Yutaro Hayashi¹, Takashi Sumida¹, Nobuyuki Iwata¹, Hiroshi Yamamoto¹ (CST, Nihon Univ.¹)

Oral presentation

[20p-D6-1~8] 6.4 New thin-film materials

Thu. Mar 20, 2014 1:00 PM - 3:00 PM D6 (D209)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

[20p-D6-1] Investigation of the Surface Treatment Conditions of a YAlO₃Single Crystal Substrate, and of Crystal Growth of Cr₂O₃Thin Film on it

^○Yutaro Hayashi¹, Takuji Kuroda¹, Takumi Nakamura¹, Takashi Sumida¹, Nobuyuki Iwata¹, Hiroshi Yamamoto¹ (CST, Nihon Univ.¹)

1:15 PM - 1:30 PM

[20p-D6-2] Separation between Hybrid Orientation CeO₂ Regions on Si(100) Substrates

^○Tomoyasu Inoue¹, Shigenari Shida¹ (IwakiMeisei Univ.¹)

1:30 PM - 1:45 PM

[20p-D6-3] Growth mechanism of a LiH epitaxial thin film

^○Hiroyuki Oguchi¹, Tamio Ikeshoji^2,3, Hiroki Kuwano¹, Shin-ichi Orimo^2,3, Susumu Shiraki³, Taro Hitosugi³ (Tohoku Univ. Engineering¹, Tohoku Univ. IMR², Tohoku Univ. AIMR³)

1:45 PM - 2:00 PM

[20p-D6-4] Preparation of SnO₂ films by surface discharge technique with various atomosphere

Masato Tan¹, Syota Kanezashi¹, Toshimichi Hanai¹, ^○Masayuki Okuya¹ (Shizuoka Univ.¹)

2:00 PM - 2:15 PM

[20p-D6-5] SnO₂ thin films prepared by coplanar type surface discharge technique under magnetic field

^○Syota Kanezashi¹, Masato Tan¹, Toshimichi Hanai¹, Masayuki Okuya¹ (Shizuoka Univ.¹)

2:15 PM - 2:30 PM

[20p-D6-6] Formation of Solution Processed Bi-Nb-O Films

^○Kosuke Ajisaka¹, Shin Matsumoto¹, Tomoki Ariga², Satoshi Inoue^1,2,3, Tatsuya Shimoda^1,2,3 (Japan Advanced Institute of Science and Technology(JAIST)¹, Green Device Reserch Center², JST-ERATO³)

2:30 PM - 2:45 PM

[20p-D6-7] Depositing Highly Adhesive Optical Thin Films on Acrylic Substrates (2)

^○Ryou Okuda¹, Tomoaki Takahashi¹, Hiroshi Murotani¹, Shigeharu Matumoto² (Tokai Univ.¹, SHINCRON CO.,LTD²)

2:45 PM - 3:00 PM

[20p-D6-8] Thickness control of the SiO_x layer of HfO₂/SiO_x/Si(100) structure by post-annealing treatment

^○Yuki Toyoshima¹, Naomi Sawamoto², Shota Taniwaki¹, Narihiro Ikeno^2,3, Yasushi Hotta^1,4, Haruhiko Yoshida^1,4, Koji Arafune^1,4, Atsushi Ogura^2,4, Shinichi Sato^1,4 (Univ. of Hyogo¹, Meiji Univ.², NIMS³, JST-CREST⁴)

Poster presentation

[20a-PA1-1~10] 6.4 New thin-film materials

Thu. Mar 20, 2014 9:30 AM - 11:30 AM PA1 (アリーナ)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[20a-PA1-1] Electrical and optical properties of IZO / Ag / IZO films

^○Yoshihisa Kudou¹, Yuzuru Matsumura¹, Midori Kawamura¹, Ziyang Zhang¹, Yoshio Abe¹, Kyung Ho Kim¹ (Kitami Inst.¹)

9:30 AM - 11:30 AM

▼ [20a-PA1-2] Fluorine-free slippery surfaces with omniphobicity

^○Mizuki Tenjimbayashi¹, Ken Suwabe¹, Seimei Shiratori¹ (Keio.Univ¹)

9:30 AM - 11:30 AM

[20a-PA1-3] Temperature dependence of resistivity of MoSi₂-Si-Composite Thin Films

^○Ryosuke Kitani¹, Yuuki Sato¹, Shinzo Yoshikado¹ (Doshisha Univ.¹)

9:30 AM - 11:30 AM

△ [20a-PA1-4] STM observation of surface morphology of Si/Ag(111)(Ⅱ)

^○（M2）Yosuke Inase¹, Masao Kamiko², Kentaro Kyuno¹ (Shibaura Inst. of Tech.¹, Inst. of Ind.Sci.,Univ. of Tokyo²)

9:30 AM - 11:30 AM

[20a-PA1-5] Deposition of Intermediate Oxide Films by Pulsed-DC Reactive Sputtering

^○Koichi Muro¹, Kiyoshi Ishii¹, Hiroshi Sakuma¹, Shunji Tanaka², Hiromi Tanaka² (Utsunomya Univ.¹, TANAKA ENGINEERING INC.²)

9:30 AM - 11:30 AM

▲ [20a-PA1-6] Deposition of Crystallized Proton Conductive Oxide by RF Magnetron Sputtering

^○（B）Tomoya Sato¹, Kiyoshi Uchiyama¹, Hiroshi Funakubo² (TNCT¹, Tokyo Inst. Tech.²)

9:30 AM - 11:30 AM

▲ [20a-PA1-7] Carrier Transport and Origins of Narrow Bandgap for P-type Layered Semiconductor, β-BaZn₂As₂

^○Zewen Xiao¹, Hidenori Hiramatsu¹, Hideo Hosono¹, Toshio Kamiya¹, Shigenori Ueda², Naoki Ohashi² (Tokyo Tech¹, NIMS²)

9:30 AM - 11:30 AM

▲ [20a-PA1-8] Growth of SnS epitaxial film and its electrical properties

^○Fanyong Ran¹, Hidenori Hiramatsu^1,2, Hideo Hosono^1,2, Zewen Xiao¹, Toshio Kamiya^1,2 (MSL, Tokyo Tech, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan.¹, MCES, Tokyo Tech, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan.²)

9:30 AM - 11:30 AM

▲ [20a-PA1-9] Scalable growth of atomically thin MoS＜sub＞2＜/sub＞ by sulfurization of molybdenum thin films

^○Carlo Orofeo¹, Satoru Suzuki¹, Hiroki Hibino¹ (NTT Basic Research Laboratories¹)

9:30 AM - 11:30 AM

[20a-PA1-10] Characteristic of Transparent Insulation Films Using Mg-C Powders

^○Takaki Oka¹, Hideki Yoshioka², Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Hyogo Pref. Inst. of Tech.²)

Sessions

06. Thin Films and Surfaces » 6.4 New thin-film materials

[19a-D6-1~9] 6.4 New thin-film materials

▲ [19a-D6-1] [INVITED]Glancing Angle Deposition for Practical Applications

▲ [19a-D6-2] Well-ordered ZnO Nanorods Growth by Chemical Bath Deposition

▲ [19a-D6-3] Efficient Production of Black Titania Thin Film Photoanodes for Solar Water Splitting

▲ [19a-D6-4] Observation of crystalline structure of ZnO thin films grown on a-Al2O3 using high-temperature H2O generated by a catalytic reaction

▲ [19a-D6-5] Doped ZnO based nanostructures for gas sensing applications

▲ [19a-D6-6] 「Invited lecture of overseas researcher」(30min.)Thin Film Metallic Glasses: Unique Properties and Potential Applications

▲ [19a-D6-7] Electronic structure study of LixNi1-xO epitaxial thin films

▲ [19a-D6-8] NIR perfect absorbers with thermochromic VO2 layer

▲ [19a-D6-9] [INVITED]Towards a higher-Tc superconductor

[19p-D6-1~18] 6.4 New thin-film materials

▲ [19p-D6-1] In situ temperature measurement of oxide thin films at a nanosecond time scale during pulsed UV laser irradiation

▲ [19p-D6-2] Graphene and tungsten disulfide nanosheets prepared using liquid phase exfoliation

▼ [19p-D6-3] Improvement of Electrical Properties of InGaZnO Thin-Film Transistors by Fluorinated Silicon Nitride Passivation

▼ [19p-D6-4] Extension of endurance of superhydrophilicity in Cassie-Baxter law by epitaxial growth of SiO2 overlayers on a rutile TiO2(110) surface

▼ [19p-D6-5] The electrical properties of binary Fe-O films deposited under various oxygen flow rate

△ [19p-D6-6] Yttrium Oxide Epitaxial Thin Films Grown Under Reductive Condition

△ [19p-D6-7] Fabrication and Analysis of Crystal Structure of ABO3(A=Ca,Sr,La B=Mn,Fe) Thin Films Using High-Density Target by Pulsed Laser Deposition Method

△ [19p-D6-8] Effect of oxygen atmosphere on LaserMBE grown CoxOy phases and multilayered film

△ [19p-D6-9] Fabrication of high Indium ratio ZnInON by RF magnetron sputtering

△ [19p-D6-10] Fabrication of TiH2 thin films by pulsed-laser deposition

[20p-D6-1~8] 6.4 New thin-film materials

[20a-PA1-1~10] 6.4 New thin-film materials

▼ [20a-PA1-2] Fluorine-free slippery surfaces with omniphobicity

△ [20a-PA1-4] STM observation of surface morphology of Si/Ag(111)(Ⅱ)

▲ [20a-PA1-6] Deposition of Crystallized Proton Conductive Oxide by RF Magnetron Sputtering

▲ [20a-PA1-7] Carrier Transport and Origins of Narrow Bandgap for P-type Layered Semiconductor, β-BaZn2As2

▲ [20a-PA1-8] Growth of SnS epitaxial film and its electrical properties

▲ [20a-PA1-9] Scalable growth of atomically thin MoS＜sub＞2＜/sub＞ by sulfurization of molybdenum thin films

▲ [19a-D6-7] Electronic structure study of Li_xNi_1-xO epitaxial thin films

▲ [19a-D6-8] NIR perfect absorbers with thermochromic VO₂ layer

△ [19p-D6-7] Fabrication and Analysis of Crystal Structure of ABO₃(A=Ca,Sr,La B=Mn,Fe) Thin Films Using High-Density Target by Pulsed Laser Deposition Method

△ [19p-D6-8] Effect of oxygen atmosphere on LaserMBE grown Co_xO_y phases and multilayered film

△ [19p-D6-10] Fabrication of TiH₂ thin films by pulsed-laser deposition

▲ [20a-PA1-7] Carrier Transport and Origins of Narrow Bandgap for P-type Layered Semiconductor, β-BaZn₂As₂