Oral presentation

[18p-E11-1~14] 14.4 Optical properties and light-emitting devices

Tue. Mar 18, 2014 1:15 PM - 5:00 PM E11 (E205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

△ [18p-E11-1] Spin relaxation in undoped GaAs grown by VGF method

^○（M1）Yuya Yasue¹, Mitsunori Uemura¹, Kazuki Honda¹, Atsushi Tackeuchi¹ (Waseda Univ.¹)

1:30 PM - 1:45 PM

[18p-E11-2] Observations of the intermediate band in GaPN alloys by two-wavelength excited photoluminescence

^○Makiko Suetsugu¹, Touhidul Islam¹, Naoki Murakoshi¹, Tsukasa Hanaoka¹, Norihiko Kamata¹, Hiroyuki Yaguchi¹ (Saitama Univ.¹)

1:45 PM - 2:00 PM

[18p-E11-3] Comparison of the photoluminescence between InAs/InGaAsP quantum dots structure and columnar quantum dots structure

^○Rie Sato¹, Moeka Yamaguchi¹, Mamiko Sato¹, Haruka Takeuchi¹, Hajime Imai¹ (Japan Women's Univ.¹)

2:00 PM - 2:15 PM

[18p-E11-4] EXAFS analyses on the (Sc_1-xEr_x)₂O₃ films grown on Si(111) by MBE

^○Hiroo Omi¹, Takehiko Tawara¹, Reina Kaji², Takahito Hozumi², Satoru Adachi², Hideki Goto¹, Tetuomi Sougawa¹ (NTT BRL¹, Hokaidou Univ²)

2:15 PM - 2:30 PM

[18p-E11-5] Photoluminescence from ZnO:Eu films sputter-deposited on sapphire substrates

^○Housei Akazawa¹, Hiroyuki Shinojima² (NTT MI Labs.¹, Kurume NCT²)

2:30 PM - 2:45 PM

△ [18p-E11-6] Sputtering-assisted MOCVD and luminescence properties of Tm-doped ZnO

^○Daiki Kishimoto¹, Ryutaro Okada¹, Yusuke Tateyama¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

Break 14:45〜15:00 （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

[18p-E11-7] Preparation of rare-earth doped GaN films grown by radical N2 assisted compound-source MBE (2)

^○Shinji Yudate¹, Yuki Koyama¹, Akira Miyata¹, Sho Shirakata¹ (Ehime Univ.¹)

3:15 PM - 3:30 PM

[18p-E11-8] Improvement of red luminescent efficiency in Eu-doped GaN/AlGaN MQW LED

^○Taknori Arai¹, Ryuta Wakamatsu¹, Dong-gun Lee¹, Atsushi Koizumi¹, Fujiwara Yasufumi¹ (Osaka Univ.¹)

3:30 PM - 3:45 PM

△ [18p-E11-9] Mutual energy transfer between Eu luminescent sites in Eu-doped GaN

^○Ryuta Wakkamatsu¹, Timmerman Dolf¹, Kazuteru Tanaka¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

3:45 PM - 4:00 PM

△ [18p-E11-10] Characterization of energy transfer process in Eu-doped GaN by two-wavelength excited photoluminescence

^○Kohei Okada¹, Ryuta Wakamatsu¹, Dolf Timmerman¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

4:00 PM - 4:15 PM

△ [18p-E11-11] Enhancement of Eu photoluminescence intensity in Eu,O-codoped GaN by microcavity

^○（M1）Tomohiro Inaba¹, Dongun Lee¹, Ryuta Wakamatsu¹, Takanori Kojima¹, Atsusi Koizumi¹, yasufumi Fujiwara¹ (Osaka Univ.¹)

4:15 PM - 4:30 PM

△ [18p-E11-12] Effects of oxygen codoping on Eu luminescence properties in Eu-doped GaN

^○Masaaki Matsuda¹, Ryuta Wakamatsu¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ¹)

4:30 PM - 4:45 PM

[18p-E11-13] Local structural analysis on Eu ions in Eu,O co-doped GaN by fluorescence XAFS

^○Hironori Ofuchi¹, Dong-gun Lee², Masaaki Matsuda², Ryuta Wakamatsu², Wanxin Zhu², Atsushi Koizumi², Tetsuo Honma¹, Yasufumi Fujiwara² (JASRI/SPring-8¹, Osaka Univ.²)

4:45 PM - 5:00 PM

[18p-E11-14] Discriminative observation of energy transfer and back transfer in GaAs:Er,O

^○Masashi Ishii¹, Koizumi Atsushi², Yoshikazu Takeda³, Yasufumi Fujiwara² (NIMS¹, Osaka Univ.², NISRI³)

Poster presentation

[18a-PG6-1~23] 14.4 Optical properties and light-emitting devices

Tue. Mar 18, 2014 9:30 AM - 11:30 AM PG6 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[18a-PG6-1] Synthesis and Characterization of photosensitizers-doped silica-coated Y2O3:Er,Yb nanoparticles in the presence of polyvinylpyrrolidone

^○Kunio Fujii¹, Tomohiro Ikehata¹, Osamu Odawara¹, Hiroyuki Wada¹ (Tokyo Tech.¹)

9:30 AM - 11:30 AM

[18a-PG6-2] Electrical characteristics of microporous silicon filled with copper

^○（M1C）Toshifumi Oya¹, Eiichi Kondoh¹, Bernard Gelloz², Lianhua Jin¹ (Univ.of Yamanashi¹, Nagoya Univ²)

9:30 AM - 11:30 AM

[18a-PG6-3] Luminescence properties of Sm³⁺, Pr³⁺ co-doped glass phosphor -Effects of host glass-

^○Yusuke Shimizu¹, Keita Watanabe¹, Hiroki Uemura², Shingo Fuchi¹, Yoshikazu Takeda² (Aoyama Univ.¹, Aichi Science & Technology Foundation²)

9:30 AM - 11:30 AM

[18a-PG6-4] Luminescence Characterization of Up-Conversion Phosphor Using Metal Oxides

^○Keito Oyama¹, Tsubasa Kanamori¹, Takanori Watari², Hirohiko Goto³, Hom Nath Luitel³, Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Saga Univ.², Shinwa-Biso co.,ltd.³)

9:30 AM - 11:30 AM

[18a-PG6-5] Luminescence Characterization of Up Conversion Phosphor Fabricated by MOD Methods

^○Tsubasa Kanamori¹, Takanori Watari², Hirohiko Goto³, Hom Nath Luitel³, Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Saga Univ.², Shinwa-Biso Co.,Ltd.³)

9:30 AM - 11:30 AM

[18a-PG6-6] Photoluminescence of Nd-Al co-doped TiO₂ thin films 3

^○Yutaka Aizawa¹, Shuji Komuro², Norie Hirao³, Xinwei Zhao¹ (Tokyo Univ. of Science¹, Toyo Univ.², JAEA³)

9:30 AM - 11:30 AM

[18a-PG6-7] Mechanoluminescence in cubic perovskite BaZrO₃:Ti

^○Masayoshi Fujihara¹, Sunao Kamimura², Chao-Nan Xu^1,2,3 (AIST¹, Kyushu Univ.², WPI-I2CNER³)

9:30 AM - 11:30 AM

[18a-PG6-8] Near-infrared mechanoluminescence in Nd³⁺-doped Sr₃Sn₂O₇

^○Sunao Kamimura¹, Chao-Nan Xu^1,2,3, ＮａｏＴｅｒａｓａｋｉ², Hiroshi Yamada², Yujin Terasawa², Masayoshi Fujihala², Ｔｏｍｏｍｉ Matsuo¹ (Kyushu Univ¹, AIST², WPI-I2CNER³)

9:30 AM - 11:30 AM

[18a-PG6-9] Structural and Optical Investigation of Multi-Phosphor Layers in Inorganic EL Applications

^○Taishi Andoh¹, Yukiharu Uraoka², Nobuyoshi Taguchi³, Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, NAIST.², Image Tech Inc.³)

9:30 AM - 11:30 AM

[18a-PG6-10] PL and EL characteristics of Bi doped Yttrium based oxide phosphor thin films prepared by magnetron sputtering

^○Shinya Abe¹, Toshihiro Miyata¹ (OEDS R&D Center, K. I. T.¹)

9:30 AM - 11:30 AM

[18a-PG6-11] Improvement of Luminescent Characteristics by Si doping for CuAlS₂:Mn Phosphor Thin Films

^○Hideki Kawaguchi¹, Yuki Oshima¹, Koutoku Ohmi^1,2 (Tottori Univ.¹, TEDREC²)

9:30 AM - 11:30 AM

[18a-PG6-12] Photoluminescence Properties of Gd₄(SiS₄)₃:Ce³⁺ Phosphors

^○（DC）Yasushi Nanai¹, Yousuke Suzuki¹, Chihiro Suzuki¹, Yu Murosaki¹, Tsuyoshi Okuno¹ (The Univ. of Electro-Communications¹)

9:30 AM - 11:30 AM

[18a-PG6-13] Fabrication of thiosilicate green phosphor La₆Si₄S₁₇:Ce³⁺ on the silicon substrate

^○Yu Murosaki¹, Yasushi Nanai¹, Tsuyoshi Okuno¹ (The Univ. of Electro-Communications¹)

9:30 AM - 11:30 AM

[18a-PG6-14] Photoluminescence properties of manganese-doped yttrium thiosilicate phosphor

^○Chihiro Suzuki¹, Yasushi Nanai¹, Tsuyoshi Okuno¹ (The Univ. of Electro-Communications¹)

9:30 AM - 11:30 AM

[18a-PG6-15] Red phosphors based on fluorosulfide host materials

^○（M1）Yoji Kageyama¹, Ryoji Mitsumoto¹, Koutoku Ohmi^1,2 (Tottori Univ.¹, TEDREC²)

9:30 AM - 11:30 AM

[18a-PG6-16] Synthesis and Photoluminescent Properties of Mg₂(Ti_0.99-X, Ge_X, Mn_0.01)O₄ Deep Red Emitting Phosphor

^○Shoma Kawakita¹, Hiroko Kominami¹, Yoichiro Nakanishi², Kazuhiko Hara^1,2 (Shizuoka Univ.¹, Shizuoka Univ.²)

9:30 AM - 11:30 AM

[18a-PG6-17] Synthesis and Characterization of Y₂WO₆:Eu Phosphor by Flux Method

Daisuke Imai¹, ^○Ariyuki Kato¹ (Nagaoka Univ. of Tech.¹)

9:30 AM - 11:30 AM

[18a-PG6-18] Synthesis and Characterization of Organic-Inorganic Hybrid Phosphor made from Malic Acid and APTES

Takuya Kawase¹, Keiji Komatsu¹, ^○Ariyuki Kato¹ (Nagaoka Univ. of Tech.¹)

9:30 AM - 11:30 AM

[18a-PG6-19] Spatial Distribution Measurement of in-Liquid reduction processes under Atmospheric Pressure Plasma Irradiation using Phosphate Phosphor Plate

Kohei Yamagami¹, Masuo Takachi¹, ^○Ariyuki Kato¹, Kotaro Iwasaki¹, Kenta Hamatani¹, Kazumasa Takahashi¹, Toru Sasaki¹, Takashi Kikuchi¹, Tsukasa Aso¹, Nob. Harada¹ (Nagaoka Univ. of Tech.¹)

9:30 AM - 11:30 AM

[18a-PG6-20] Reduction Treatment of KSrPO₄:Eu Phosphor by Inductively Coupled Plasma

Masuo Takachi¹, Kohei Yamagami¹, Kazumasa Takahashi¹, Toru Sasaki¹, Takashi Kikuchi¹, ^○Ariyuki Kato¹ (Nagaoka Univ. of Tech.¹)

9:30 AM - 11:30 AM

[18a-PG6-21] Positive temperature variation of the bandgap energy in AgInS₂ semiconductor

^○Shunji Ozaki¹, Yoshimichi Horikoshi¹ (Gunma Univ.¹)

9:30 AM - 11:30 AM

[18a-PG6-22] Number oflayer dependence of second harmonic generation in MoS₂ thin films

^○Chikuma Tsukamoto¹, Shintarou Nomura¹ (Univ.Tsukuba¹)

9:30 AM - 11:30 AM

[18a-PG6-23] Fano interference of two phonon and cotinuum in p-GaInP

^○Hironori Sakamoto¹, kazuyuki Ishihara¹, Bei Ma¹, Ken Morita¹, Yoshihiro Ishitani¹ (Chiba Univ.¹)

Oral presentation

[19a-E11-1~10] 14.4 Optical properties and light-emitting devices

Wed. Mar 19, 2014 9:00 AM - 11:45 AM E11 (E205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-E11-1] IR excited Auger electron emission from P-doped Si nano-crystals and its effects to luminescence properties

^○Masashi Ishii¹, Iain Crowe², Matthew Halsall², Andrew Knights³, Russell Gwilliam⁴, Bruce Hamilton² (NIMS¹, Univ. Manchester², McMaster Univ.³, Univ. Surrey⁴)

9:15 AM - 9:30 AM

[19a-E11-2] Photoluminescence properties of Ge films formed on SiO₂

^○（M2）Seiya Kamigata¹, Xuejun Xu¹, Kentaro Sawano¹, Yasuhiro Shiraki¹, Takuya Maruizumi¹ (Tokyo City Univ.¹)

9:30 AM - 9:45 AM

[19a-E11-3] Phosphorus delta-doping at Ge quantum dots /Si interfaces and their photoluminescence

^○Tatsuya Nakama¹, Xuejun Xu¹, Kentarou Sawano¹, Yasuhiro Shiraki¹, Takuya Maruizumi¹ (Tokyo City Univ.¹)

9:45 AM - 10:00 AM

▼ [19a-E11-4] Giant Light Emission Enhancement from Uniaxial-Strained Ge Quantum Dots

^○Xuejun Xu¹, Tatsuya Nakama¹, Takuya Maruizumi¹, Yasuhiro Shiraki¹ (ARL, Tokyo City Univ.¹)

10:00 AM - 10:15 AM

△ [19a-E11-5] Valley-selective optical excitation in Ge

^○Tetsuya Sakamoto¹, Yuhsuke Yasutake^1,2, Susumu Fukatsu¹ (Univ. of Tokyo¹, JST-PRESTO²)

10:15 AM - 10:30 AM

△ [19a-E11-6] Photoluminescence from highly n-doped, tensile-strained Ge-on-Insulator

^○Keisuke Nishida¹, Xuejun Xu¹, Kohki Takabayashi¹, Keisuke Yoshida¹, Kentarou Sawano¹, Yasuhiro Shiraki¹, Takuya Maruizumi¹ (Tokyo City Univ.¹)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[19a-E11-7] Electric Properties of Electroluminescence devices based on a perovskite-type oxide phosphor of Ca_0.6Sr_0.4TiO₃:Pr deposited by the Pulse-Laser Deposition (PLD) method

Mitsuko Aoki¹, ^○Keiichi Ikegami¹, Kimihiro Yonekawa², Noboru Miura², Hiroshi Takashima¹ (AIST¹, Sch. Sci. Tech., Meiji Univ.²)

11:00 AM - 11:15 AM

[19a-E11-8] TFEL devices coated with high dielectric nano particles

^○Yuki Itagaki¹, Shota Kunioka¹, Koutoku Ohmi^1,2 (Tottori Univ¹, TEDREC²)

11:15 AM - 11:30 AM

[19a-E11-9] TFEL devices prepared by ink-jet printing -Investigation of surfactants for liquid-phase synthesis of ZnS:Mn nanoparticles-

^○Naoki Doi¹, Naoya Fukuta¹, Koutoku Ohmi^1,2 (Tottori Univ.¹, TEDREC²)

11:30 AM - 11:45 AM

[19a-E11-10] Estimation of Fermi Level Potential of ZnS:Cu,Cl Phosphor by Potentiometric Titraation Method

^○Koichi Wani¹ (TAZMO CO.,LTD.¹)

Oral presentation

[19p-E11-1~19] 14.4 Optical properties and light-emitting devices

Wed. Mar 19, 2014 1:15 PM - 6:15 PM E11 (E205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 11:45〜13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[19p-E11-1] Luminescent Property of ZnO-LiGaO2(s.s.) Phosphors without Rare Metal

^○Koji Inoue¹ (Mie Industrial Research Institute¹)

1:30 PM - 1:45 PM

[19p-E11-2] YVO₄:Bi,Eu nanophosphor synthesized by microreaction method

^○Ryosuke Sakata¹, Kenzi Yamashina¹, Hiroshi Okura³, Ryohei Komiyama¹, Hidetoshi Miyashita¹, Sansoku Lee¹, Koutoku Ohmi^1,2 (Tottori Univ.¹, TEDREC², Merck Ltd.³)

1:45 PM - 2:00 PM

[19p-E11-3] Crystal Growth and Optical Properties of Eu Doped SrAl₂O₄ : Effects of the atmosphere

^○Tomoya Ishibashi¹, Syouko Furukawa¹, Akio Yamanaka¹ (Chitose Institute of Science and Technology¹)

2:00 PM - 2:15 PM

[19p-E11-4] Emission characteristics of Ce-doped Ca₃Sc₂Si₃O₁₂

Kengo Takahashi¹, Kunihiko Tanaka¹, ^○Hisao Uchiki¹ (Nagaoka Univ. Tech.¹)

2:15 PM - 2:30 PM

[19p-E11-5] ESR Spectrum and Magnetism of Blue Phosphor Sr₃MgSi₂O₈:Eu²⁺

^○Hayato Miyagawa¹, Kousaku Sone¹, Yoshiaki Kamigaki^1,2, Shinji Okamoto³ (Kagawa Univ.¹, E&B Research Lab.², Tokyo Kagaku Kenkyusho³)

2:30 PM - 2:45 PM

[19p-E11-6] Effect of Boron doping on emission properties of Eu and Nd co-doped CaAl₂O₄

^○Chiharu Hidaka¹, Takeo Takizawa¹ (Nihon Univ.¹)

2:45 PM - 3:00 PM

[19p-E11-7] Sr₂SnO₄:Nd³⁺の近赤外長残光

^○Sunao Kamimura¹, Chao-Nan Xu^1,2,3, Hiroshi Yamada², Masayosi Fujihala², Tomomi Matsuo¹ (Kyushu Univ.¹, AIST², WPI-I2CNER³)

3:00 PM - 3:15 PM

[19p-E11-8] Development of UV light source using Pr:LuAG thin film target pumped by electron beam (I)

^○Norio Ichikawa¹, Kohei Ikeda¹, Yoshinori Honda¹, Hiroyuki Taketomi¹, Koji Kawai¹, Takashi Suzuki¹ (HAMAMATSU PHOTONICS K.K.¹)

3:15 PM - 3:30 PM

[19p-E11-9] Development of UV light source using Pr:LuAG thin film target pumped by electron beam (II)

^○Yoshinori Honda¹, Hiroyuki Taketomi¹, Koji Kawai¹, Norio Ichikawa¹, Takashi Suzuki¹ (HAMAMATSU PHOTONICS K.K.¹)

Break 15:30〜15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

△ [19p-E11-10] High temperature deposition of ZnO fluorescent thin films by RF magnetron sputtering and observation of samples by electron beam excitation assisted microscope

^○Satoshi Kanamori^1,2, Aki Miyake², Wataru Inami^1,2,3, Hiroko Kominami¹, Yoshimasa Kawata^1,2,3, Yoichiro Nakanishi² (Graduate school of Engineering, Shizuoka Univ.¹, Research Institute of Electronics, Shizuoka Univ.², JST-CREST³)

4:00 PM - 4:15 PM

[19p-E11-11] First principles study for electronic states and luminescence properties of alkali-earth chalcogenide phosphors

^○Hiroshi Nakano¹, Masahito Oh-e¹ (Sharp Corp.¹)

4:15 PM - 4:30 PM

[19p-E11-12] Ab initio Theoretical Study of 4f→5d Transitions in CaF₂:Eu²⁺

^○Fumihiko Aiga¹, Ryosuke Hiramatsu¹, Ishida Kunio¹ (Toshiba Corp.¹)

4:30 PM - 4:45 PM

△ [19p-E11-13] Fabrication of new oxyfluoride glass with RE showing high efficient photoluminescence

^○Kenji Shinozaki¹, Tsuyoshi Honma¹, Takayuki Komatsu¹ (Nagaoka Univ. Tech.¹)

4:45 PM - 5:00 PM

[19p-E11-14] Preparation of K2SiF6:Mn4+ phosphor fine particles by laser ablation in liquid

^○Ze Yuan¹, Toshihiro Nakamura¹, Sadao Adachi¹ (Gunma Univ¹)

5:00 PM - 5:15 PM

[19p-E11-15] Synthsis and evaluation of Eu³⁺-activated BaSiF₆ powder

^○Daisuke Sekiguchi¹, Sadao Adachi¹ (Gunma Univ.¹, Gunma Univ.²)

5:15 PM - 5:30 PM

[19p-E11-16] Synthesis and luminescent properties of KCl:Ce³⁺,Tb³⁺ green phosphor

^○Yuki Tosaka¹, Sadao Adachi¹ (Gunma Univ.¹)

5:30 PM - 5:45 PM

[19p-E11-17] Synthesis and photoluminescent properties of white-emitting NaCl:Ce³⁺, Tb³⁺ , Mn²⁺ phosphor

^○Yoshihiro Naggaoka¹, Sadao Adachi¹ (Gunma Univ.¹)

5:45 PM - 6:00 PM

[19p-E11-18] Degradation of K₂SiF₆:Mn²⁺ phosphor under UV light illumination

^○Takuya Oyama¹, Sadao Adachi¹ (Gunma Univ.¹)

6:00 PM - 6:15 PM

[19p-E11-19] Degradation of ZnSiF₆･6H₂O:Mn⁴⁺ red phosphor under UV light illumination

^○ryosuke hoshino¹, sadao adachi¹ (Gunma Univ.¹)

Oral presentation

[20a-E11-1~9] 14.4 Optical properties and light-emitting devices

Thu. Mar 20, 2014 9:30 AM - 11:45 AM E11 (E205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:30 AM - 9:45 AM

[20a-E11-1] Synthesis and Optical Properties of Green Phosphor (Ba_3-x,Ca_x)Si₆O₁₂N₂:Eu²⁺(x= 0-0.75)

^○（M2）Junpei Iwasaki¹, Takao Katagiri², Yuki Yanase³, Tomoaki Watanabe³, Takao Sasagwa², Osamu Odawara¹, Hiroyuki Wada¹ (IGS Tokyo Tech.¹, MSL Tokyo Tech.², SST Meiji Univ.³)

9:45 AM - 10:00 AM

[20a-E11-2] Photoluminescence Properties of Ce3+-doped yellow-emitting Sr-containing Sialon Phosphor.

^○Yumi Fukuda¹, Iwao Mitsuishi¹, Keiko Ariane Albessard¹, Aoi Okada¹, Yasushi Hattori¹, Kunio Ishida¹, Masahiro Kato¹ (Toshiba Corp.¹)

10:00 AM - 10:15 AM

[20a-E11-3] Luminescence Properties of CaAlSiN₃:Eu²⁺ Phosphors Prepared from Metal Hydrides

Hyo Sung Kim¹, ^○Hiromasa Hanzawa², Masahiro Itoh², Ken-ichi Machida², Shinichiro Hatta², Taketoshi Nakao² (Osaka Univ.¹, Osaka Univ.², Osaka Univ.³, Osaka Univ.⁴, Osaka Univ.⁵, Osaka Univ.⁶)

10:15 AM - 10:30 AM

▲ [20a-E11-4] Discovery of New Phosphors from One Single Particle (I)- The Basic Concept of the Approach

^○Rong-Jun Xie¹, Naoto Hirosaki¹, Takashi Takeda¹, Shiro Funahashi¹, Takayuki Suehiro¹, Yuichi Michiue¹ (NIMS¹)

10:30 AM - 10:45 AM

[20a-E11-5] Discovery of New Phosphor from One Single Particle (II) Crystal Structure Analysis

^○（PC）Shiro Funahashi¹, Yuichi Michiue¹, Takashi Takeda¹, Rong-Jun Xie¹, Naoto Hirosaki¹ (NIMS¹)

10:45 AM - 11:00 AM

[20a-E11-6] Discovery of New Phosphor from One Single Particle (III) Luminescence Property

^○Takashi Takeda¹, Naoto Hirosaki¹, Shiro Funahashi¹, Rong-Jun Xie¹, Yuichi Michiue¹, Takayuki Suehiro¹ (NIIMS¹)

11:00 AM - 11:15 AM

[20a-E11-7] Discovery of New Phosphor from Single Particle (IV) Expansion to Powder Synthesis

^○Ryo Yoshimatsu^1,2, Shiro Funahashi³, Suzuya Yamada², Naoto Hirosaki³, Koutoku Ohmi¹ (Tottori Univ.¹, DENKA², NIMS³)

11:15 AM - 11:30 AM

[20a-E11-8] The property of the white LEDs using the Eu doped βsialon phosphor and Ce doped CALSON phosphor

^○Ken-ichi Yoshimura¹, Hiroshi Fukunaga¹, Yoshitaka Tomomura¹, Kohsei Takahashi², Rong-Jun Xie², Naoto Hirosaki² (Sharp¹, NIMS²)

11:30 AM - 11:45 AM

▲ [20a-E11-9] Influence of Si-doping on the luminescence and defect evolution of AlN

^○Yujin Cho^1,2, Benjamin Dierre¹, Takashi Takeda¹, Donghyun Son², Kohsei Takahashi^1,2, Yoshiaki Kamigaki³, Kazuhiro Marumoto^2,4, Naoki Fukata¹, Naoto Hirosaki¹, Takashi Sekiguchi^1,2 (NIMS¹, Tsukuba univ², Kagawa univ³, JST⁴)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[18p-E11-1~14] 14.4 Optical properties and light-emitting devices

△ [18p-E11-1] Spin relaxation in undoped GaAs grown by VGF method

△ [18p-E11-6] Sputtering-assisted MOCVD and luminescence properties of Tm-doped ZnO

△ [18p-E11-9] Mutual energy transfer between Eu luminescent sites in Eu-doped GaN

△ [18p-E11-10] Characterization of energy transfer process in Eu-doped GaN by two-wavelength excited photoluminescence

△ [18p-E11-11] Enhancement of Eu photoluminescence intensity in Eu,O-codoped GaN by microcavity

△ [18p-E11-12] Effects of oxygen codoping on Eu luminescence properties in Eu-doped GaN

[18a-PG6-1~23] 14.4 Optical properties and light-emitting devices

[19a-E11-1~10] 14.4 Optical properties and light-emitting devices

▼ [19a-E11-4] Giant Light Emission Enhancement from Uniaxial-Strained Ge Quantum Dots

△ [19a-E11-5] Valley-selective optical excitation in Ge

△ [19a-E11-6] Photoluminescence from highly n-doped, tensile-strained Ge-on-Insulator

[19p-E11-1~19] 14.4 Optical properties and light-emitting devices

△ [19p-E11-10] High temperature deposition of ZnO fluorescent thin films by RF magnetron sputtering and observation of samples by electron beam excitation assisted microscope

△ [19p-E11-13] Fabrication of new oxyfluoride glass with RE showing high efficient photoluminescence

[20a-E11-1~9] 14.4 Optical properties and light-emitting devices

▲ [20a-E11-4] Discovery of New Phosphors from One Single Particle (I)- The Basic Concept of the Approach

▲ [20a-E11-9] Influence of Si-doping on the luminescence and defect evolution of AlN