Poster presentation

[15p-P13-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Mar 15, 2017 4:00 PM - 6:00 PM P13 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

▲ [15p-P13-1] Fabrication of low B-doped p-BaSi₂/n⁺-Si heterojunction solar cells

〇Emha Bayu Miftahullatif¹, Takabe Ryouta¹, Yachi Suguru¹, Toko Kaoru¹, Suemasu Takashi¹ (1.Univ. of Tsukuba)

4:00 PM - 6:00 PM

▲ [15p-P13-2] Characterizations of crystalline quality and electrical properties of nitrogen-doped BaSi₂ films on Si(111)

〇(M1)Zhihao Xu¹, Tianguo Deng¹, Ryota Takabe¹, Miftahullatif Emha Bayu¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ.Tsukuba)

4:00 PM - 6:00 PM

[15p-P13-3] Near infrared PL properties of defect - related PL in BaSi₂ epitaxial films

〇Naoki Murakoso¹, Hirofumi Hoshida¹, Motoki Iinuma¹, Hagime Eguchi¹, Takashi Suemasu², Yoshikazu Terai¹ (1.Kyushu Inst. of Tech, 2.Univ. of Thukuba)

4:00 PM - 6:00 PM

[15p-P13-4] Control of electron density in β-FeSi₂ epitaxial films by Sb doping

〇Motoki Iinuma¹, Hajime Eguchi¹, Naoki Murakoso¹, Hirofumi Hoshida¹, Yoshikazu Terai¹ (1.Kyusyu Inst. of Tech.)

4:00 PM - 6:00 PM

[15p-P13-5] IR absorption measurement of Mg₂Si and evaluation of free electron density

〇Fuko Yaguchi¹, Kohei Nakano¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

4:00 PM - 6:00 PM

[15p-P13-6] Synthesis of Si-based nanosheet bundles by a ball miling technique

〇Nanae Atsumi¹, Kenta Sasaki², Peiling Yuan³, Hirokazu Tatsuoka² (1.Fac.Eng.,Shizuoka Univ., 2.Grad. Sch. Integr. Sci. & Technol., Dept. Eng.,Shizuoka Univ., 3.GSST,Shizuoka Univ.)

4:00 PM - 6:00 PM

[15p-P13-7] Synthesis of Si-based nanosheet bundles by NH4Cl treatment using CaSi₂ as a template

〇Yuya Saito¹, Kenta Sasaki¹, Yuki Kumazawa¹, Nanae Atsumi², Keita Hikichi², Peiling Yuan³, Hirokazu Tatsuoka¹ (1.Grad. Sch. Integr. Sci. & Technol., Dept. Eng.,Shizuoka Univ., 2.Fac.Eng.,Shizuoka Univ., 3.Grad. Sch. Sci. & Technol.,Shizuoka Univ.)

4:00 PM - 6:00 PM

[15p-P13-8] Synthesis of Si-based nanosheet bundles using MgCl₂ molten salt

〇Yuki Kumazawa¹, Hirokazu Tatsuoka¹ (1.Grad. Sch. Integr. Sci & Technol., Dept. Eng., Shizuoka Univ.)

4:00 PM - 6:00 PM

[15p-P13-9] Piezoresistance Effect in Germanium

〇Kazunori Matsuda¹, Masaki Hihara¹, Shiro Nagaoka², Yozo Kanda³ (1.Tokushima Bunri Univ., 2.NIT Kagawa College, 3.Toyo Univ.)

4:00 PM - 6:00 PM

[15p-P13-10] Effect of impurities in 3C-SiC of photothermal divergence method

〇Shun Kamada¹, Shinya Takeichi², Takanori Kozai², Takeshi Fujihara², Tomoya Konishi², Toshihiro Okamoto¹, Masanobu Haraguchi¹, Masaru Kamano² (1.Tokushima Univ, 2.National Institute of Technology, Anan College)

4:00 PM - 6:00 PM

[15p-P13-11] Optical absorption about Na doped type II clathrate film on transparent substrate

〇Nanto Sugii¹, Ohashi Fumitaka¹, Tetsuji Kume¹, Himanshu Shekher Jha¹, Tetsuya Mukai¹, Shota Suzuki¹, Hideya Makino¹, Shuichi Nonomura¹ (1.Gifu Univ.)

Oral presentation

[16a-B5-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Mar 16, 2017 9:00 AM - 12:00 PM B5 (B5)

Haruhiko Udono(Ibaraki Univ.), Hirokazu Tatsuoka(Shizuoka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-B5-1] Evaluation of BaSi₂ thin film fabricated on textured Si substrates by thermal evaporation

〇(B)Michinobu Fujiwara¹, Kazuma Takahashi¹, Yoshihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

9:15 AM - 9:30 AM

[16a-B5-2] Evaluation of crystal structure of BaSi₂ films grown on 3C-SiC films

〇Yoshihiko Nakagawa¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

9:30 AM - 9:45 AM

[16a-B5-3] Preparation of Mg₂Si thin films by Mg/Si co-sputter deposition on sapphire substrate

〇Takashi Ikehata¹, Motomu Saijo¹, Ryota Sasajima¹, Naoyuki Sato¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

9:45 AM - 10:00 AM

[16a-B5-4] Reactive Deposition Epitaxy of SrGe₂ thin films on Ge substrates

〇Toshifumi Imajo¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

10:00 AM - 10:15 AM

[16a-B5-5] High-pressure & high-temperature synthesis of rhenium carbide with carbon nitride and rhenium precursor

〇Nozomu Yasui¹, Kenichi Takarabe¹, Taku Okada², Daisuke Yamazaki³, Hiroaki Ohfuji⁴, Youhei Kojima⁴, Satoshi Nakano⁵ (1.Okayama Univ.of Sci., 2.Tokyo univ., 3.IPM, Okayama Univ., 4.GRC, Ehime Univ., 5.NIMS)

10:30 AM - 10:45 AM

[16a-B5-6] Effect of BaSi₂ template layer on p-BaSi₂/n-Si solar cells performance

〇Suguru Yachi¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.univ. of Tsukuba)

10:45 AM - 11:00 AM

[16a-B5-7] Relationship between p-BaSi₂ thickness and p-BaSi₂/n-Si solar cells performance

〇Yudai Yamashita¹, Suguru Yachi¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

11:00 AM - 11:15 AM

▲ [16a-B5-8] Characterization of p-BaSi₂/n-Si solar cells using Boron-doped p-BaSi₂ on textured n-Si (001) grown by molecular beam epitaxy

〇(D)Tianguo Deng¹, Ryota Takabe¹, Zhihao Xu¹, Kaoru Toko¹, Kazuhiro Gotoh², Noritaka Usami², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Nagoya Univ.)

11:15 AM - 11:30 AM

△ [16a-B5-9] Development of preparation method of p-type BaSi₂ thin films for Si heterojunction solar cells application

〇Kazuma Takahashi¹, Yoshihiko Nakagawa¹, Kosuke Hara², Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ., 2.Univ. Yamanashi)

11:30 AM - 11:45 AM

[16a-B5-10] Reduction of contact resistance between surface electrode and Sb-doped n-BaSi₂ for p-n homojunction solar cells

〇Komomo Kodama¹, Ryota Takabe¹, Suguru Yachi¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:45 AM - 12:00 PM

[16a-B5-11] Reduction of Contact Resistance of a-Si/BaSi₂ Deposited by Vacuum Evaporation

Takamichi Suhara¹, 〇Yoshihiko Nakagawa¹, Kosuke O. Hara², Yasuyoshi Kurokawa¹, Takashi Suemasu³, Noritaka Usami¹ (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.Univ. of Tsukuba)

Oral presentation

[16p-B5-1~15] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Mar 16, 2017 1:45 PM - 5:45 PM B5 (B5)

Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[16p-B5-1] [JSAP Young Scientist Award Speech] Characterization of undoped n-BaSi₂ epitaxial films on Si(111) with varying Ba/Si flux ratios

〇Ryota Takabe¹, Suguru Yachi¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

2:00 PM - 2:15 PM

[16p-B5-2] Investigation on oxygen impurity in evaporated BaSi₂ films

〇Kosuke Hara¹, Chiaya Yamamoto¹, Junji Yamanaka¹, Keisuke Arimoto¹, Kiyokazu Nakagawa¹, Yasuyoshi Kurokawa², Noritaka Usami² (1.Univ. Yamanashi, 2.Nagoya Univ.)

2:15 PM - 2:30 PM

[16p-B5-3] Polarized Neutron Reflectivity Study of Magnetic Structure in Fe₃Si/FeSi₂ Superlattices

〇Takayasu Hanashima¹, Satoshi Takeichi², Noboru Miyata¹, Ken-ichiro Sakai³, Hiroyuki Deguchi⁴, Tsuyoshi Yoshitake² (1.CROSS Tokai, 2.Kyushu Univ., 3.Kurume NCT, 4.Kyushu Inst. Tech.)

2:30 PM - 2:45 PM

▼ [16p-B5-4] Photoluminescence Property of Si-based nanosheet bundles rooted on Si substrates

〇(D)Yuan Peiling¹, Ryo Tamaki², Kenta Sasaki³, Makoto Nakayama³, Yuya Saito³, Shinya Kusazaki³, Yuki Kumazawa³, Meng Xiang¹, Nazmul Ahsan², Yoshitaka Okada², Hirokazu Tatsuoka³ (1.Grad. Sch. Sci. & Technol., Shizuoka Univ., 2.RCAST, The Univ. of Tokyo, 3.Grad. Sch. Integr. Sci. & Technol., Dept. Eng., Shizuoka Univ.)

2:45 PM - 3:00 PM

[16p-B5-5] PL lifetimes of Si defect-related PLs in surface-damaged Si substrate

〇Kazuya Ogi¹, Naohiro Oka¹, Syuya Ikeda¹, Kenta Setojima¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

3:00 PM - 3:15 PM

[16p-B5-6] PL lifetime of 1.5 μm PL in Si/β-FeSi₂/Si polycrystalline stacked structures

〇Shuya Ikeda¹, Kenta Setojima¹, Kazuya Ogi¹, Naohiro Oka¹, Yoshikazu Terai¹ (1.Kyushu Inst. of tech.)

3:15 PM - 3:30 PM

[16p-B5-7] Mid-infrared optical absorption and photoconductive gain of silicon supersaturated with sulfur

〇(M1)Hiroki Hayase¹, Katsuki Nagao¹, Tatsuya Nakai¹, Yuto Hosomi¹, Muneyuki Naito¹, Tamao Aoki¹, Ikurou Umezu¹ (1.Konan Univ.)

3:30 PM - 3:45 PM

[16p-B5-8] Electrical Characterization of annealed Mg₂Si bulk single crystals

〇(M1)Kohei Nakano¹, Fuko Yaguchi¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

4:00 PM - 4:15 PM

[16p-B5-9] Electronic structure of BaSi₂

〇Motoharu Imai¹, Mukesh Kumar¹, Naoto Umezawa¹ (1.NIMS)

4:15 PM - 4:30 PM

[16p-B5-10] Exploratory study on the substitutional elements of Mg₂Si so as to evoke negative chemical pressure

〇Yoji Imai¹, Atsushi Yamamoto¹, Tsutomu Iida², Ken-ichi Takarabe³ (1.AIST, 2.Tokyo Univ. Sci., 3.Okayama Univ. Sci.)

4:30 PM - 4:45 PM

[16p-B5-11] Quasi-particle first principle calculation of energy bands in distorted Mg₂Si

〇Hiroharu Sugawara¹, Ayumi Inaba¹ (1.Tokyo Metro. Univ.)

4:45 PM - 5:00 PM

[16p-B5-12] Linear Regression Analysis of Band-Gap Energies of Semiconducting Silicides

Masaya Fuchi¹, Mikihiro Arima¹, 〇Yoshihito Maeda¹ (1.Kyutech)

5:00 PM - 5:15 PM

[16p-B5-13] Linear Regression Analysis of Dielectric Constants of Tetrahedral Semiconductors

Mikihiro Arima¹, Masaya Fuchi¹, 〇Yoshihito Maeda¹ (1.Kyutech)

5:15 PM - 5:30 PM

[16p-B5-14] Effect of Chalcogen Doping in Copper Iodide

〇(D)Satoshi Koyasu¹, Akira Yamaguchi¹, Naoto Umezawa², Masahiro Miyauchi¹ (1.Tokyo Tech., 2.NIMS)

5:30 PM - 5:45 PM

△ [16p-B5-15] Novel Transparent Bipolar Oxide Semiconductor: ZrOS

〇Takeshi Arai¹, Soshi Iimura¹, Junghwan Kim², Hideo Hosono^1,2 (1.MSL, TIT, 2.MCES, TIT)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-P13-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [15p-P13-1] Fabrication of low B-doped p-BaSi2/n+-Si heterojunction solar cells

▲ [15p-P13-2] Characterizations of crystalline quality and electrical properties of nitrogen-doped BaSi2 films on Si(111)

[16a-B5-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [16a-B5-8] Characterization of p-BaSi2/n-Si solar cells using Boron-doped p-BaSi2 on textured n-Si (001) grown by molecular beam epitaxy

△ [16a-B5-9] Development of preparation method of p-type BaSi2 thin films for Si heterojunction solar cells application

[16p-B5-1~15] 13.2 Exploratory Materials, Physical Properties, Devices

▼ [16p-B5-4] Photoluminescence Property of Si-based nanosheet bundles rooted on Si substrates

△ [16p-B5-15] Novel Transparent Bipolar Oxide Semiconductor: ZrOS

Authentication

▲ [15p-P13-1] Fabrication of low B-doped p-BaSi₂/n⁺-Si heterojunction solar cells

▲ [15p-P13-2] Characterizations of crystalline quality and electrical properties of nitrogen-doped BaSi₂ films on Si(111)

▲ [16a-B5-8] Characterization of p-BaSi₂/n-Si solar cells using Boron-doped p-BaSi₂ on textured n-Si (001) grown by molecular beam epitaxy

△ [16a-B5-9] Development of preparation method of p-type BaSi₂ thin films for Si heterojunction solar cells application