〇Akito Kuramata^1,2, Kimiyoshi Koshi^1,2, Kohei Sasaki^1,2, Ken Goto^1,2, Shinya Watanabe^1,2, Yu Yamaoka^1,2, Daiki Wakimoto^1,2, Quang Tu Thieu¹, Takekazu Masui^1,2, Shigenobu Yamakoshi^1,2, Hisashi Murakami³, Yoshinao Kumagai³, Masataka Higashiwaki⁴ (1.Novel Crystal Tech., 2.Tamura Corp., 3.Tokyo Univ. of Agri. & Tech., 4.NICT)

5:30 PM - 6:00 PM

[16p-502-9] Chemical vapor deposition of diamond thin films for semiconducting device applications

〇Satoshi Koizumi¹ (1.NIMS)

6:00 PM - 6:30 PM

[16p-502-10] Process technologies on high-temperature and high-frequency diamond power devices

〇Hitoshi Umezawa¹ (1.AIST)

Sessions

Symposium » Process technology for advanced power semiconductor devices

[16p-502-1~10] Process technology for advanced power semiconductor devices

[16p-502-1] Latest Si Power Device Process Technologies

[16p-502-2] Technology Trend of Device and Process for SiC Power Devices

[16p-502-3] Design of Thermal Oxidation Processes for the Control of MOS Interface Properties on 4H-SiC

△ [16p-502-4] Oxygen pressure controlled oxidation for gate insulator process of SiC MOSFET

[16p-502-5] Thermally Stable SiC Schottky Barrier Diodes Utilizing Laminated W/C Electrodes

[16p-502-6] Fabrication Process Technology for Vertical GaN Devices

[16p-502-7] Ion Implantation into GaN and Its Application to Power Devices

[16p-502-8] Ga₂O₃ Wafer Process Technology for Power Devices

[16p-502-9] Chemical vapor deposition of diamond thin films for semiconducting device applications

[16p-502-10] Process technologies on high-temperature and high-frequency diamond power devices

Authentication