Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C302 (52-302)

Kozo Makiyama(Fujitsu Lab.), Masashi Kato(NITech)

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▲：英語発表
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1:45 PM - 2:00 PM

[19p-C302-1] GaN-MOSFET characteristics of the controlled interface

〇Katsunori Ueno¹, Hideaki Matsuyama¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)

2:00 PM - 2:15 PM

[19p-C302-2] Improvement of MOS channel properties on Mg implanted GaN MOSFETs

〇Shinya Takashima¹, Ryo Tanaka¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kazunobu Kojima², Shigefusa F. Chichibu^2,3, Akira Uedono⁴, Kiyokazu Nakagawa⁵ (1.Fuji Electric, 2.Tohoku Univ., 3.Nagoya Univ., 4.Univ. Tsukuba, 5.Univ. Yamanashi)

2:15 PM - 2:30 PM

[19p-C302-3] Impacts of surface potential fluctuation on carrier mobility in an inversion layer of GaN MOSFET

〇Noriyuki Taoka¹, Toshikazu Yamada¹, Shimizu Mitsuaki¹ (1.AIST GaN-OIL)

2:30 PM - 2:45 PM

[19p-C302-4] Threshold voltage shift in vertical trench GaN-MOSFETs by negative gate-bias stress

〇(M1)Masataka Sasada¹, Norihumi Takashima¹, Shoichi Murata¹, Joel Asubar¹, Hirokuni Tokuda¹, Katsunori Ueno², Masaharu Edo², Masaaki Kuzuhara¹ (1.Fukui Univ., 2.Fuji Electric Co., Ltd.)

2:45 PM - 3:00 PM

[19p-C302-5] Demonstration of vertical GaN MOSFET fabricated by Mg ion implantation

〇Ryo Tanaka¹, Shinya Tanashima¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)

3:00 PM - 3:15 PM

△ [19p-C302-6] Fabrication of recessed-gate AlGaN/GaN MOS-HFET with AlON gate insulator

〇(M2)Kenta Watanabe¹, Mikito Nozaki¹, Takahiro Yamada¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

3:15 PM - 3:30 PM

△ [19p-C302-7] Operation stability in Al₂O₃-gate AlGaN/GaN MOS HEMT

〇(M1)Yuji Ando¹ (1.Hokkaido Univ.)

3:30 PM - 3:45 PM

△ [19p-C302-8] Electron Transport in GaN/InN Superlattice Channel HEMT

〇(M1)Tomoki Hoshino¹, Nobuya Mori¹ (1.Osaka Univ.)

3:45 PM - 4:00 PM

△ [19p-C302-9] Fabrication of N-polar GaN/AlGaN heterostructure by transferred substrate method

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs)

4:15 PM - 4:30 PM

[19p-C302-10] Theoretical study on Improved Current Collapse in AlGaN/GaN HEMT with Field Plate Structure

〇(PC)Kazuki Kodama¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

4:30 PM - 4:45 PM

[19p-C302-11] Characterization of AlGaN/GaN MOS-HEMTs with Dual Field Plates

〇(M1)Ryota Yamaguchi¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

4:45 PM - 5:00 PM

[19p-C302-12] Characterization of AlGaN/GaN recessed MIS-HEMTs using sputtered SiN as gate dielectric

〇Wataru Gamachi¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

5:00 PM - 5:15 PM

[19p-C302-13] Fabrication of high thermal-tolerance AlGaN / GaN HEMT with p⁺-Si gate contact

〇Shunichi Kohno¹, Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ)

5:15 PM - 5:30 PM

[19p-C302-14] Effects of RIE-damaged layer removal on electrical properties of AlGaN/GaN structures prepared by AlGaN regrowth on RIE-GaN surface

〇Akio Yamamoto¹, Keito Kanatani¹, Shinya Makino¹, Masaaki Kuzuhara¹ (1.Univ. of Fukui)

5:30 PM - 5:45 PM

[19p-C302-15] Study on effect of trap lifetime to pulse response of GaN HEMT by TCAD

Kousuke Ajiro¹, 〇Toshiyuki Oishi¹ (1.Saga Univ.)

5:45 PM - 6:00 PM

[19p-C302-16] Growth of InAlGaN/AlGaN heterostructures by MOCVD and thermal stability evaluation of their 2DEG properties

〇(M1)Daiki Hosomi¹, Heng Chen¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

6:00 PM - 6:15 PM

[19p-C302-17] Interface State at AlGaN/GaN Interfaces of Polarization-Junction Substrate

〇Takuya Hoshii¹, Rumi Takayama¹, Shuma Tsuruta¹, Akira Nakajima², Shin-ichi Nishizawa³, Hiromichi Ohashi¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST, 3.Kyushu Univ.)

6:15 PM - 6:30 PM

[19p-C302-18] Threading dislocation reduction in selectively grown GaN for applications to three dimensional channel transistors

〇Takuya Hamada¹, Hiroki Kuroiwa¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

Session information

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

[19p-C302-1] GaN-MOSFET characteristics of the controlled interface

[19p-C302-2] Improvement of MOS channel properties on Mg implanted GaN MOSFETs

[19p-C302-3] Impacts of surface potential fluctuation on carrier mobility in an inversion layer of GaN MOSFET

[19p-C302-4] Threshold voltage shift in vertical trench GaN-MOSFETs by negative gate-bias stress

[19p-C302-5] Demonstration of vertical GaN MOSFET fabricated by Mg ion implantation

△ [19p-C302-6] Fabrication of recessed-gate AlGaN/GaN MOS-HFET with AlON gate insulator

△ [19p-C302-7] Operation stability in Al₂O₃-gate AlGaN/GaN MOS HEMT

△ [19p-C302-8] Electron Transport in GaN/InN Superlattice Channel HEMT

△ [19p-C302-9] Fabrication of N-polar GaN/AlGaN heterostructure by transferred substrate method

[19p-C302-10] Theoretical study on Improved Current Collapse in AlGaN/GaN HEMT with Field Plate Structure

[19p-C302-11] Characterization of AlGaN/GaN MOS-HEMTs with Dual Field Plates

[19p-C302-12] Characterization of AlGaN/GaN recessed MIS-HEMTs using sputtered SiN as gate dielectric

[19p-C302-13] Fabrication of high thermal-tolerance AlGaN / GaN HEMT with p⁺-Si gate contact

[19p-C302-14] Effects of RIE-damaged layer removal on electrical properties of AlGaN/GaN structures prepared by AlGaN regrowth on RIE-GaN surface

[19p-C302-15] Study on effect of trap lifetime to pulse response of GaN HEMT by TCAD

[19p-C302-16] Growth of InAlGaN/AlGaN heterostructures by MOCVD and thermal stability evaluation of their 2DEG properties

[19p-C302-17] Interface State at AlGaN/GaN Interfaces of Polarization-Junction Substrate

[19p-C302-18] Threading dislocation reduction in selectively grown GaN for applications to three dimensional channel transistors

Authentication

Session information

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

△ [19p-C302-6] Fabrication of recessed-gate AlGaN/GaN MOS-HFET with AlON gate insulator

△ [19p-C302-7] Operation stability in Al2O3-gate AlGaN/GaN MOS HEMT

△ [19p-C302-8] Electron Transport in GaN/InN Superlattice Channel HEMT

△ [19p-C302-9] Fabrication of N-polar GaN/AlGaN heterostructure by transferred substrate method

Authentication

△ [19p-C302-7] Operation stability in Al₂O₃-gate AlGaN/GaN MOS HEMT