Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[18p-N302-1] Si concentration dependence of slow decay components in TR-PL from n-GaN epilayers

〇Masashi Kato^1,2, Takato Asada¹, Shuai Zhu¹, Kenji Ito³, Kazuyoshi Tomita³, Tetsuo Narita³, Tetsu Kachi² (1.NITech, 2.Nagoya Univ., 3.Toyota Central R&D Labs.)

1:15 PM - 1:30 PM

[18p-N302-2] Optical DLTS studies of MOVPE n-GaN with different carbon concentrations

〇(M2)Syun Ito¹, Yutaka Tokuda¹ (1.Aichi Inst. of Technol)

1:30 PM - 1:45 PM

[18p-N302-3] Evaluation of trap density in GaN by transient current
measurement upon step voltage application

〇Hirofumi Nishida¹, Takuya Hoshii¹, Hiroaki Kataoka¹, Kazuo Tsutsui², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech. School of Eng., 2.Tokyo Tech. IIR)

1:45 PM - 2:00 PM

[18p-N302-4] Evaluation of hole traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Meguru Endo¹, Kazutaka Kanegae¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS)

2:00 PM - 2:15 PM

[18p-N302-5] Mapping of N-polar p-type GaN Schottky contacts using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Tomoyuki Tanigawa², Ryuji Katayama², Takashi Matsuoka³ (1.Univ. of Fukui, 2.Osaka Univ., 3.NICHe, Tohoku Univ.)

2:15 PM - 2:30 PM

[18p-N302-6] Mapping of photo-electrochemical etched Ni/GaN Schottky contacts
using scanning internal photoemission microscopy (Ⅱ)
--Comparison of n-type and p-type crystals--

〇(M1)Ryo Matsuda¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³, Kenji Shiojima¹ (1.Fukui Univ., 2.SCIOCS, 3.Hosei Univ.)

2:45 PM - 3:00 PM

[18p-N302-7] Measurement accuracy of net acceptor concentration of p-type GaN by C-V method

〇(M1)Shohei Rokuno¹, Horita Masahiro^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

3:00 PM - 3:15 PM

[18p-N302-8] Mg recoil implantation into GaN with incident Nitrogen ion (4)

〇Toshikazu Yamada¹, Hisashi YAMADA¹, Tokio TAKAHASHI¹, Mituaki SIMIZU¹ (1.National Institute of Advanced Industrial Science & Technology)

3:15 PM - 3:30 PM

[18p-N302-9] Demonstration of acceptor formation in Mg-ion implanted GaN by high pressure annealing

〇Hideki Sakurai^1,2,3, Shinji Yamada^1,2,3, Akihiko Koura³, Masahiro Horita^1,2, Michal Bockowski^1,4, Jun Suda^1,2, Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.Nagoya Univ., 3.ULVAC ISET, 4.UNIPRESS)

3:30 PM - 3:45 PM

[18p-N302-10] Threshold Voltage Shift of p-GaN/AlGaN/GaN HEMTs Induced by Gamma-ray Irradiation and its Dependence on Measurement Pulse Width

〇Koki Tsurimoto¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

3:45 PM - 4:00 PM

[18p-N302-11] Reduction of plasma damage in N-polar GaN HEMT fabrication process

〇Akihiro Hayasaka¹, Ryosuke Aonuma¹, Koushi Hotta¹, Nanae Kanai¹, Isao Makabe², Shigeki Yoshida², Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries, Ltd.)

4:00 PM - 4:15 PM

△ [18p-N302-12] Suppression of green luminescence by co-implantation of Mg/F ions into GaN at high temperature

〇Masahiro Takahashi¹, Atsushi Tanaka^2,3, Yuto Ando¹, Hirotaka Watanabe², Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Kevin J. Chen^2,4, Hiroshi Amano^2,3,5,6 (1.Dept. of Electronics, Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Hong Kong Univ. of Sci. and Technol., 5.Nagoya Univ. ARC, 6.Nagoya Univ. VBL)

4:30 PM - 4:45 PM

△ [18p-N302-13] Threshold voltage control in normally-off Al₂O₃/AlGaN/GaN MOS-HEMTs through Al₂O₃ thickness variation

〇(M2)Shinsaku Kawabata¹, Joel Asubar¹, Hirokuni Tokuda¹, Akio Yamamoto¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

4:45 PM - 5:00 PM

△ [18p-N302-14] Interface control of Al₂O₃/AlGaN/GaN structures for MOS-HEMT application

〇Ryota Ochi¹, Yuji Ando¹, Shota Kaneki¹, Tamotsu Hashizume¹ (1.RCIQE, Hokkaido Univ.)

5:00 PM - 5:15 PM

△ [18p-N302-15] Quick measurement method for carbon-related defect density in n-type GaN layer by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy

〇Kazutaka Kanegae^1,4, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³, Masahiro Horita^1,3,4, Tsunenobu Kimoto¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.Toyota Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

5:15 PM - 5:30 PM

△ [18p-N302-16] Characterization of leakage current near breakdown in AlGaN/GaN MOS-HEMTs

〇(M2)Takashi Nishitani¹, Shunsuke Kamiya¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

5:30 PM - 5:45 PM

△ [18p-N302-17] Current status of evaluation for Radio-Frequency performance in 2DHG Diamond MOSFETs; Output Power Density P_out = 3.8 W/mm at 1 GHz

〇(M1)Ken Kudara¹, Shoichiro Imanishi¹, Kiyotaka Horikawa¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Waseda ZAIKEN)

5:45 PM - 6:00 PM

△ [18p-N302-18] Development of Vertical-type 2DHG Diamond MOSFET towards Realization of High Power P-type MOSFET

〇(M1)Jun Nishimura¹, Masayuki Iwataki¹, Nobutaka Oi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Waseda ZAIKEN.)

Session information

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

[18p-N302-1] Si concentration dependence of slow decay components in TR-PL from n-GaN epilayers

[18p-N302-2] Optical DLTS studies of MOVPE n-GaN with different carbon concentrations

[18p-N302-3] Evaluation of trap density in GaN by transient current
measurement upon step voltage application

[18p-N302-4] Evaluation of hole traps introduced by electron beam irradiation in homoepitaxial n-type GaN

[18p-N302-5] Mapping of N-polar p-type GaN Schottky contacts using scanning internal photoemission microscopy

[18p-N302-6] Mapping of photo-electrochemical etched Ni/GaN Schottky contacts
using scanning internal photoemission microscopy (Ⅱ)
--Comparison of n-type and p-type crystals--

[18p-N302-7] Measurement accuracy of net acceptor concentration of p-type GaN by C-V method

[18p-N302-8] Mg recoil implantation into GaN with incident Nitrogen ion (4)

[18p-N302-9] Demonstration of acceptor formation in Mg-ion implanted GaN by high pressure annealing

[18p-N302-10] Threshold Voltage Shift of p-GaN/AlGaN/GaN HEMTs Induced by Gamma-ray Irradiation and its Dependence on Measurement Pulse Width

[18p-N302-11] Reduction of plasma damage in N-polar GaN HEMT fabrication process

△ [18p-N302-12] Suppression of green luminescence by co-implantation of Mg/F ions into GaN at high temperature

△ [18p-N302-13] Threshold voltage control in normally-off Al₂O₃/AlGaN/GaN MOS-HEMTs through Al₂O₃ thickness variation

△ [18p-N302-14] Interface control of Al₂O₃/AlGaN/GaN structures for MOS-HEMT application

△ [18p-N302-15] Quick measurement method for carbon-related defect density in n-type GaN layer by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy

△ [18p-N302-16] Characterization of leakage current near breakdown in AlGaN/GaN MOS-HEMTs

△ [18p-N302-17] Current status of evaluation for Radio-Frequency performance in 2DHG Diamond MOSFETs; Output Power Density P_out = 3.8 W/mm at 1 GHz

△ [18p-N302-18] Development of Vertical-type 2DHG Diamond MOSFET towards Realization of High Power P-type MOSFET

Authentication

Session information

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

△ [18p-N302-12] Suppression of green luminescence by co-implantation of Mg/F ions into GaN at high temperature

△ [18p-N302-13] Threshold voltage control in normally-off Al2O3/AlGaN/GaN MOS-HEMTs through Al2O3 thickness variation

△ [18p-N302-14] Interface control of Al2O3/AlGaN/GaN structures for MOS-HEMT application

△ [18p-N302-15] Quick measurement method for carbon-related defect density in n-type GaN layer by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy

△ [18p-N302-16] Characterization of leakage current near breakdown in AlGaN/GaN MOS-HEMTs

△ [18p-N302-17] Current status of evaluation for Radio-Frequency performance in 2DHG Diamond MOSFETs; Output Power Density Pout = 3.8 W/mm at 1 GHz

△ [18p-N302-18] Development of Vertical-type 2DHG Diamond MOSFET towards Realization of High Power P-type MOSFET

Authentication

△ [18p-N302-13] Threshold voltage control in normally-off Al₂O₃/AlGaN/GaN MOS-HEMTs through Al₂O₃ thickness variation

△ [18p-N302-14] Interface control of Al₂O₃/AlGaN/GaN structures for MOS-HEMT application

△ [18p-N302-17] Current status of evaluation for Radio-Frequency performance in 2DHG Diamond MOSFETs; Output Power Density P_out = 3.8 W/mm at 1 GHz