1:30 PM - 2:00 PM
〇Osamu Eryu1 (1.Nagoya Inst. Tech)
Symposium (Oral)
Symposium » Progress in ion implantation for semiconductor devices -Si, GaAs and WBG materials-
Sun. Mar 10, 2019 1:30 PM - 5:50 PM W922 (Multi-Purpose Digital Hall)
Masayuki Imaizumi(Mitsubishi Electric), Tohru Oka(Toyoda Gosei)
△:Presentation by Applicant for JSAP Young Scientists Presentation Award
▲:English Presentation
▼:Both of Above
No Mark:None of Above
1:30 PM - 2:00 PM
〇Osamu Eryu1 (1.Nagoya Inst. Tech)
2:00 PM - 2:30 PM
〇Katsumi Nakamura1, Kenji Suzuki1, Koichi Nishi1 (1.Power Device Works, Mitsubishi Electric Corporation)
2:30 PM - 3:00 PM
〇Tsunenobu Kimoto1 (1.Kyoto Univ.)
3:00 PM - 3:30 PM
〇Digh Hisamoto1, Naoki Tega1, Kazuki Tani1, Takeru Suto1, Yuki Mori1 (1.Hitachi, Ltd.)
3:50 PM - 4:20 PM
〇Masaaki Kuzuhara1 (1.Univ. Fukui)
4:20 PM - 4:50 PM
〇Tetsu Kachi1 (1.Nagoya Univ)
4:50 PM - 5:20 PM
〇Masataka Higashiwaki1, Man Hoi Wong1, Chia-Hung Lin1, Kohei Sasaki2, Ken Goto2,3,4, Akito Kuramata2, Shigenobu Yamakoshi2,4, Hisashi Murakami3, Yoshinao Kumagai3 (1.NICT, 2.Novel Crystal Technology, 3.Tokyo Univ. of Agri., 4.Tamura Corp.)
5:20 PM - 5:50 PM
〇Takashi Tanii1, Takahiro Shinada2, Tokuyuki Teraji3, Shinobu Onoda4, Takeshi Ohshima4, Liam McGuinness5, Fedor Jelezko5, Yan Liu6, E Wu6, Wataru Kada7, Osamu Hanaizumi7, Hiroshi Kawarada1, Junichi Isoya8 (1.Waseda Univ., 2.Tohoku Univ., 3.NIMS, 4.QST, 5.Ulm Univ., 6.ECNU, 7.Gunma Univ., 8.Univ. of Tsukuba)
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